A5081303758- Advanced Semiconductor Detectors and Materials
- Advanced Optical Sensing Technologies
- Infrared Target Detection Methodologies
- Silicon Carbide Semiconductor Technologies
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and devices
- Advanced X-ray and CT Imaging
- Advancements in Semiconductor Devices and Circuit Design
- Radiation Detection and Scintillator Technologies
- Spectroscopy and Chemometric Analyses
- Image Processing Techniques and Applications
- Ocular and Laser Science Research
- Random lasers and scattering media
- Integrated Circuits and Semiconductor Failure Analysis
- Semiconductor materials and interfaces
- CCD and CMOS Imaging Sensors
- Remote Sensing in Agriculture
- Thermography and Photoacoustic Techniques
- Smart Agriculture and AI
- Electronic and Structural Properties of Oxides
Shanghai Institute of Technical Physics
2020-2024
Institute of Microelectronics
2021-2022
Chinese Academy of Sciences
2021-2022
University of Chinese Academy of Sciences
2021-2022
Xinjiang Institute of Ecology and Geography
2022
Research Center for Ecology and Environment of Central Asia
2022
Multi-temporal deep learning approaches can make full use of crop growth patterns and phenological characteristics, resulting in excellent classification performance large areas. However, obtaining complete time-series remote sensing images during the growing season is challenging due to cloud contamination. Hence, given multispectral data, it important impute missing data accurately classify crops. A novel Imputation-BiLSTM model (Im-BiLSTM) was developed based on Bidirectional Long...
Abstract HgCdTe avalanche photodiodes promise various fascinating applications due to the outstanding capability of detecting weak signals or even single photon. However, underlying transport mechanisms diverse dark current components are still unresolved at high reverse bias, thus limiting development high-performance devices. Here, we establish an accurate model demonstrate competitive mechanism between band-to-band and currents in positive-intrinsic-negative structures. Based on...
The <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}$ </tex-math></inline-formula> – notation="LaTeX">${V}$ characteristics of 4H-SiC N/P-channel MOSFETs have been carried out at high temperatures up to 300 °C. Different scattering mechanisms surface mobility for N-channel studied in this article. Moreover, the temperature dependencies various mobilities P-channel are given first time. Their were...
This paper presents the characteristics of HgCdTe mid-wavelength infrared (MWIR) electron-initiated avalanche photodiodes (e-APDs) as a function temperature under different biases. The devices show low dark current density order <inline-formula><tex-math notation="LaTeX">${10^{ - 7}} \text{A/cm}^2$</tex-math></inline-formula> at 80 K when reverse bias voltage is below 4 V, with an exponential gain above 100 − 8 V. Low excess noise factor around 1.2 also demonstrated for K. and...
Leakage current of 1200-V 4H-SiC Schottky barrier diodes (SBDs) with different structures increased by various degrees after heavy-ion exposure. By taking <inline-formula> <tex-math notation="LaTeX">${I}$ </tex-math></inline-formula>–<inline-formula> notation="LaTeX">${V}$ </tex-math></inline-formula> measurements in a range 298 to 448 K, the voltage dependence saturation (<inline-formula> notation="LaTeX">$I_{0}$ </tex-math></inline-formula>), height notation="LaTeX">$\phi _{B0}$ and...
The threshold voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {th}}$ </tex-math></inline-formula> ) instability induced by gate stress has always been a significant reliability issue for silicon carbide (SiC) MOSFET. negative bias temperature (NBTI) of 4H-SiC p-channel MOSFET (pMOS) was studied experimentally at 200 °C and compared with that n-channel (nMOS). It is shown the drift pMOS...
Mid-wavelength infrared HgCdTe electron-initiated avalanche photodiodes (e-APDs) have presented excellent performances on resolving and counting photons. Aiming at low flux, the readout integrated circuit noise can be significantly reduced by certain device gain, very excess of e-APDs gives opportunity for equivalent photon (NEPh) to 1. Therefore, main issue signal-to-noise ratio APD is gain normalized dark current density (GNDCD) high reverse bias. In this work, electric field distribution...
Abstract This paper mainly investigates the area-dependent gain and noise characteristics of mid-wavelength infrared (MWIR) Hg 0.7 Cd 0.3 Te planarelectron avalanche photodiodes (e-APDs) operated at 80 K. The 10- μ m-radius diode exhibits low dark current in magnitude 10 –13 A below −5.5 V, high up to 1270 −10 excess factor between 1 1.2. optimal performances are compromised by tunneling current, which should be further suppressed. Studies on variable-area diodes show that larger have a...
The gate oxide instability of 4H-SiC pMOS induced by ac stress was experimentally investigated at 200 °C for the first time. threshold voltage drift ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\Delta {V}_{\text {th}}$ </tex-math></inline-formula> ) under different conditions measured. results show that high-frequency could cause additional . Furthermore, it found will breakdown °C. However, no 27 By...
HgCdTe has been shown to be the first semiconductor exhibiting single-carrier multiplication in short-wavelength, medium-wavelength, long-wavelength avalanche photodiodes detectors for cut-off wavelengths from 1.3 µm 11 corresponding compositions xcd 0.7 0.2, which remarkable characteristics of high gain, bandwidth and almost no excess noise. These results have opened a new horizon photon starved high-speed applications, such as active imaging free space optical communications. In this...
HgCdTe electron avalanche photodiodes (e-APDs) with single-carrier multiplication hold great promise for weak signal detection. This work investigates the key metrics that affect signal-to-noise ratio of mid-wavelength infrared (MWIR) Hg0.7Cd0.3Te e-APD: current, gain, and excess noise factor. The gain is over 1000 at -10 V, but maximum useful limited by generation band-to-band tunneling current higher bias voltages. dispersion obtained characterizing focal plane array 4.7% -7 indicating a...
The HgCdTe avalanche photodiode (APD) with built-in gain mechanism has great application prospects in the field of weak light signal detection. Any dark current will be converted into noise affecting work efficiency photodetectors. Therefore, study is an important way to obtain high performance APD. In this paper, photoelectric detection planar junction electron injection APD systematically studied, focusing on two aspects structural optimization design and improvement. dependence device...
HgCdTe has been shown to be the first semiconductor exhibiting single-carrier multiplication in avalanche photodiodes (APDs) up gain values larger than 1000 and with close zero excess noise. These results have opened a new windows for low-flux versatile imaging. In this paper, we report latest on 50μm pitch 128×128 array APDs x<sub>cd</sub>=0.307 manufactured at SITP. Through optimizing implantation parameters annihilation parameters, designed PIN junction structure could obtained, then...
HgCdTe avalanche photodetector is one of the most promising candidates in capturing ultra-weak signal or even single photon mid-wavelength infrared. However, limited breakdown voltage and unresolved underlying physics still lay an inevitable obstacle to achieve high-performance photodetectors. Here, for first time we propose a collapse mechanism thoroughly demonstrate that underpins relatively low-voltage traditional positive-intrinsic-negative structures both theoretically experimentally....
HgCdTe avalanche photodiodes (APD) have been demonstrated to be one of the most promising paths for low flux and high speed applications. The bandwidth e-APD has theoretically predicted independent gain, owed its strongly dominant electron multiplication. However, when photocurrent is high, a large number electrons exists in depletion region, electrical field region might collapse due space charge effect, thus limiting increase gain-bandwidth product. In this work, structure device was...
Mid-Wavelength Infrared (MWIR) HgCdTe electron-initiated avalanche photodiodes (e-APDs) have presented excellent performances to resolve and count photons. Aiming at low flux, the Readout Integrated Circuit (ROIC) noise can be extremely reduced by certain device gain, very excess of e-APDs makes opportunity for equivalent photon (NEPh) one. Therefore, main issue Signal-to-Noise Ratio (SNR) APD is Gain Normalized Dark Current Density (GNDCD) high reverse bias. In this work, electric field...