Jonathan Spring

ORCID: 0000-0003-2447-3075
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About
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Research Areas
  • Advanced Condensed Matter Physics
  • Magnetic and transport properties of perovskites and related materials
  • Rare-earth and actinide compounds
  • Electronic and Structural Properties of Oxides
  • Advanced Memory and Neural Computing
  • Iron-based superconductors research
  • Physics of Superconductivity and Magnetism
  • Covalent Organic Framework Applications
  • Mesoporous Materials and Catalysis
  • Ferroelectric and Negative Capacitance Devices
  • Multiferroics and related materials
  • Catalytic Processes in Materials Science
  • Ferroelectric and Piezoelectric Materials
  • Organometallic Compounds Synthesis and Characterization
  • Electrochemical sensors and biosensors
  • Thermal Expansion and Ionic Conductivity
  • Zeolite Catalysis and Synthesis
  • Carbon Dioxide Capture Technologies
  • Membrane Separation and Gas Transport
  • Photoreceptor and optogenetics research
  • Neuroscience and Neural Engineering
  • Transition Metal Oxide Nanomaterials
  • Electrochemical Analysis and Applications

University of Zurich
2021-2025

University of Geneva
2021

Paul Scherrer Institute
2021

Swiss Light Source
2021

ETH Zurich
2017-2020

Massachusetts Institute of Technology
2020

École Polytechnique Fédérale de Lausanne
2015-2018

Texas A&M University
1993

Oxide-based valence-change memristors are promising nonvolatile memories for future electronics that operate on reactions to modulate their electrical resistance. The memristance is associated with the movement of oxygen ionic carriers through vacancies at high electric field strength via structural defect modifications still poorly understood. This study employs a Ce1–xGdxO2–y solid solution model probe role either set as "free" or "immobile and clustered" resistive switching performance....

10.1021/acsnano.7b03116 article EN ACS Nano 2017-08-29

Abstract Tuning of electronic density-of-states singularities is a common route to unconventional metal physics. Conceptually, van Hove are realized only in clean two-dimensional systems. Little attention has therefore been given the disordered (dirty) limit. Here, we provide magnetotransport study dirty metamagnetic system calcium-doped strontium ruthenate. Fermi liquid properties persist across transition, but with an unusually strong variation Kadowaki-Woods ratio. This revealed by...

10.1038/s42005-020-00504-0 article EN cc-by Communications Physics 2021-01-04

The properties of functional oxide heterostructures are strongly influenced by the physics governing their interfaces. Modern deposition techniques allow us to accurately engineer interface through growth atomically precise heterostructures. This enables minute control over electronic, magnetic, and structural characteristics, which in turn allows for tuning can even lead emergence not present individual heterostructure components. Here, we investigate magnetic tailor-made superlattices...

10.1021/acsnano.4c07252 article EN ACS Nano 2025-04-08

Memristive devices are among the most prominent candidates for future computer memory storage and neuromorphic computing. Though promising, major hurdle their industrial fabrication is device-to-device cycle-to-cycle variability. These occur due to random nature of nanoionic conductive filaments, whose rupture formation govern device operation. Changes in filament location, shape, chemical composition cause This challenge tackled by spatially confining filaments with Ni nanoparticles....

10.1002/smll.202003224 article EN Small 2020-09-17

Charge-transfer phenomena at heterointerfaces are a promising pathway to engineer functionalities absent in bulk materials but can also lead degraded properties ultrathin films. Mitigating such undesired effects with an interlayer reshapes the interface architecture, restricting its operability. Therefore, developing less-invasive methods control charge transfer will be beneficial. Here, appropriate top-interface design allows for remote manipulation of configuration buried and concurrent...

10.1002/adma.202203071 article EN cc-by-nc Advanced Materials 2022-07-16

The field of oxide spintronics can strongly benefit from the establishment robust ferromagnetic insulators with near room-temperature Curie temperature. Here we investigate structural, electronic, and magnetic properties atomically-precise epitaxially-strained thin films double perovskite La$_2$NiMnO$_6$ (LNMO) grown by off-axis radio-frequency magnetron sputtering. We find that retain both a strong insulating behavior bulk-like temperature in order 280 K, nearly independently epitaxial...

10.1063/5.0055614 article EN cc-by APL Materials 2021-08-01

We report on the effect of magnetic impurities microscopic superconducting (SC) properties kagome-lattice superconductor $\mathrm{La}{({\mathrm{Ru}}_{1\ensuremath{-}x}{\mathrm{Fe}}_{x})}_{3}{\mathrm{Si}}_{2}$ using muon spin relaxation/rotation. A strong suppression critical temperature ${T}_{\mathrm{c}}$, SC volume fraction, and superfluid density was observed. further find a correlation between ${T}_{\mathrm{c}}$ which is considered hallmark feature unconventional superconductivity. Most...

10.1103/physrevb.109.134501 article EN Physical review. B./Physical review. B 2024-04-01

We report muon spin rotation (µSR) experiments on the microscopic properties of superconductivity and magnetism in kagome superconductor CeRu2withTc≃5 K. From measurements temperature-dependent magnetic penetration depthλ, superconducting order parameter exhibits nodeless pairing, which fits best to an anisotropics-wave gap symmetry. further show that theTc/λ-2ratio is comparable unconventional superconductors. Furthermore, powerful combination zero-field (ZF)-µSR high-fieldµSR has been used...

10.1088/1361-648x/ac9813 article EN cc-by Journal of Physics Condensed Matter 2022-10-06

The properties of functional oxide heterostructures are strongly influenced by the physics governing their interfaces. Modern deposition techniques allow us to accurately engineer interface through growth atomically precise heterostructures. This enables minute control over electronic, magnetic, and structural characteristics. Here, we investigate magnetic tailor-made superlattices employing ferromagnetic insulating double perovskites RE$_2$NiMnO$_6$ (RE = La, Nd), featuring distinct Curie...

10.48550/arxiv.2406.09937 preprint EN arXiv (Cornell University) 2024-06-14

We investigate ferromagnetic and insulating thin films of the $B$-site ordered double perovskite ${\mathrm{Nd}}_{2}{\mathrm{NiMnO}}_{6}$ (NNMO) grown by radio frequency off-axis magnetron sputtering. The grow epitaxially strained on a selection substrates display strain-independent bulklike ${T}_{\text{C}}$ $200\phantom{\rule{0.16em}{0ex}}\mathrm{K}$ at thickness 30 unit cells. explore dependence NNMO/${\mathrm{SrTiO}}_{3}$(001) system find ferromagnetism down to ultralow thicknesses only 3...

10.1103/physrevmaterials.7.104407 article EN cc-by Physical Review Materials 2023-10-24

We report on the effect of magnetic impurities microscopic superconducting (SC) properties kagome-lattice superconductor La(Ru$_{1-x}$Fe$_{x}$)$_{3}$Si$_{2}$ using muon spin relaxation/rotation. A strong suppression critical temperature $T_{\rm c}$, SC volume fraction, and superfluid density was observed. further find a correlation between c}$ which is considered hallmark feature unconventional superconductivity. Most remarkably, measurements temperature-dependent penetration depth...

10.48550/arxiv.2309.07827 preprint EN other-oa arXiv (Cornell University) 2023-01-01

The miniaturization of standard silicon-based memory technologies reaches physical limits in terms size and power dissipation. Novel computing architectures based on resistive switches are promising for future electronics beyond Von Neumann architecture. In oxide-based switches, the memristance is associated with movement ionic carriers through oxygen vacancies an oxide film at high electric field strength via structural defect modifications that still poorly understood. Here, we newly...

10.1149/ma2017-02/28/1203 article EN Meeting abstracts/Meeting abstracts (Electrochemical Society. CD-ROM) 2017-09-01

Memristor devices are promising potential hardware components for computer memory and neural network computing. Advances over the last years on understanding implementing memristor technology had positioned them as a major candidate to overcome current bottlenecks in electronic-based transistors terms of downscaling capabilities energy consumption. In particular, challenges preventing widespread implementation oxygen-based memristors today’s integrated circuits include need address...

10.1149/ma2019-02/27/1226 article EN Meeting abstracts/Meeting abstracts (Electrochemical Society. CD-ROM) 2019-09-01
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