The depth profiling of organic materials with argon cluster ion sputtering has recently become widely available several manufacturers surface analytical instrumentation producing sources suitable for analysis. In this work, we assess the performance in an interlaboratory study under auspices VAMAS (Versailles Project on Advanced Materials and Standards). results are compared to a previous that focused C60q+ using similar reference materials. Four laboratories participated time-of-flight...

Abstract An Ar Gas Cluster Ion Beam (GCIB) has been shown to remove previous + ion beam‐induced surface damage a bulk polyimide (PI) film. After removal of the damaged layer with GCIB sputter source, XPS measurements show minor changes carbon, nitrogen and oxygen atomic concentrations relative original elemental concentrations. The depth profiles showed that there is linear relationship between beam voltage within range from 0.5 4.0 keV dose argon cluster ions required layer. rate recovery...

X-ray photoelectron spectroscopy depth profiling of polyimide thin films on silicon substrates using an Ar cluster ion beam results in extremely low degradation the chemistry. In range from 2.5 to 20 kV, a lower energy produces sputter induced damage polymer and improved interface width. The sputtering rates are found increase exponentially with energy.

The greater information depth provided in Hard X-ray Photoelectron Spectroscopy (HAXPES) enables non-destructive analyses of the chemistry and electronic structure buried interfaces. Moreover, for industrially relevant elements like Al, Si Ti, combined access to Al 1s, 1s or Ti photoelectron line its associated KLL, KLL Auger transition, as required local chemical state analysis on basis parameter, is only possible with hard X-rays. Until now, such photoemission studies were at synchrotron...

The selection of ion-beam species and parameters for depth profiling requires experience to obtain accurate information an efficient sputter rate on diverse samples. Sputter damage that causes changes in the chemical state composition should be avoided. Monoatomic sources are commonly utilized rapid sputtering metals inorganics, but highly oxidized metal oxides organics is well-known. Cluster ion beams have become popular recent years soft materials because their capability low organics,...

In recent years, all-solid-state batteries (ASSBs) have been attracting attention as the next generation for electric vehicles, energy storage systems, etc. Despite growing interest, there are still many challenges faced in commercial use of ASSBs. One biggest issues is internal resistance, especially generated at interface between solid electrolyte and electrode. The resistance limits charge-discharge cycling performances. order to solve this issue, it necessary examine chemical physical...

Low‐energy inverse photoelectron spectroscopy (LEIPS) and ultraviolet (UPS) incorporated into the multitechnique XPS system were used to probe ionization potential electron affinity of organic materials, respectively. By utilizing gas cluster ion beam (GCIB), in situ analyses depth profiling LEIPS UPS also demonstrated. The band structures 10‐nm‐thick buckminsterfullerene (C 60 ) thin film on Au (100 nm)/indium tin oxide nm)/glass substrate successfully evaluated direction.

We previously developed a massive cluster ion beam gun for secondary mass spectrometry (SIMS) in which the primary source is vacuum electrospray. The yields produced by this method had not yet been measured with commercial time-of-flight (TOF) spectrometer, and ionization performance was unknown.A vacuum-type electrospray droplet connected to triple-focus TOF analyzer. flight time of ions using sample-bias pulsing method, because short pulse could be obtained. an amino acid sample beams...

Combined chemical analyses of both the surface and bulk industrial catalysts is a significant challenge, because all microanalysis methods reveal either or properties but not both. We demonstrate combined use hard soft X‐ray photoelectron spectroscopy (XPS) as powerful, practical, nondestructive tool to quantitatively analyze composition at surfaces (~1 nm) subsurfaces/bulk (~10 for catalysts. The surface‐bulk differentiation achieved via an exchangeable anode system, where Al (Kα, 1486.6...

In order to overcome the limitations of sputter depth profiling, authors have introduced focused ion beam-time-of-flight secondary mass spectrometry (FIB-TOF-SIMS). this article, summarize our investigation into capability Ar-gas cluster beam (GCIB) remove FIB-induced molecular damage. The analysis organic–inorganic hybrid mixture samples is applied and discussed. demonstrate a method whereby accurate reproducible chemical distributions atomic moieties in materials are successfully acquired....

Time‐of‐flight secondary ion mass spectrometry (TOF‐SIMS) has become widely used to characterize various kinds of materials, especially organic materials. It recently possible investigate the molecular distributions underneath surface using Ar‐GCIB (gas cluster beam) depth profiling. is an important new capability for practical use TOF‐SIMS because subsurface and interface chemistry plays role in performance many products. However, it difficult obtain accurate chemical sputter profiling when...

The authors report the use of high-performance liquid chromatography (HPLC) and time-of-flight secondary ion mass spectrometry (TOF-SIMS) utilizing a gas cluster beam to accurately measure dopant concentration its depth profile in organic thin films used for light-emitting diodes. total concentrations estimated by HPLC 4,4'-bis(carbazol-9-yl)biphenyl (CBP) doped with tris(2-phenylpyridinato)iridium(III) (Ir(ppy)3) are consistent those measured quartz crystal microbalances (QCMs) during...

Rationale Organic light‐emitting diode (OLED) products based on display applications have become popular in the past 10 years, and new are being commercialized with rapid frequency. Despite many advantages of OLEDs, these devices still a problem concerning lifetime. To gain an understanding degradation process, authors investigated molecular information for deteriorated OLED using time‐of‐flight secondary ion mass spectrometry (TOF‐SIMS). Methods TOF‐SIMS depth profiling is indispensable...

Abstract The introduction of C 60 + as a sputter ion beam for ToF‐SIMS has made it possible to acquire molecular depth profiles on wide variety polymers. However, previous studies have indicated that certain classes polymers undergo sputter‐induced damage when bombarded with prevents obtaining stable secondary signals function depth. A number different analytical parameters been previously explored in attempts improve profiling these polymer classes. In this study, the effect incident angle...

Focused ion beam (FIB) is commonly used as a standard machining technique in failure analysis, quality control, reverse engineering, material research, and so on, for the samples having microstructures nanostructures. FIB combined with time‐of‐flight secondary mass spectrometry (TOF‐SIMS), so‐called FIB‐TOF, has attracted attention method to determine three‐dimensional (3D) chemical distributions of complex samples. In general, highly focused Ga + FIB, however, FIB‐milled area limited it was...

Cluster ions such as C60+ are well used the sputtering for polymer depth profiling. The molecules of analyte surfaces occasionally damaged by ion bombardment during sputtering, leading to a loss molecular information. In order obtain proper profile, conditions shall be optimized, however, they have not been investigated sufficiently. this study, incident angle dependence was at from 48° 76° with respect surface normal. Samples were bulk polycarbonate (PC), polystyrene (PS), and...

Recently, applications of TOF-SIMS have expanded into a wide variety organic materials, because the sensitivity high mass molecular ions was improved dramatically. However, it very difficult to determine chemical formula from measured above m/z 200. The ambiguous peak identification significant problem in TOF-SIMS. In order as well detailed structure, we developed instrument equipped with MS/MS, and applied various materials. this article, will introduce unique instrument, demonstrate...

The recent applications of argon gas cluster ion beam (GCIB) for X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary mass spectrometry (TOF-SIMS) are briefly reviewed. Depth profiling organic materials has been one the most notable challenges in conventional XPS TOF-SIMS. Recently, it is getting widely accepted that GCIB enabled us to obtain depth profiles materials. unique sputtering characteristics, such as extremely low chemical damage, high yield surface smoothing...

This paper characterizes changes in organic light-emitting diodes to better understand the origin of decrease external quantum efficiency (ηext) when switching cathode deposition method from evaporation DC magnetron sputtering. An increase driving voltage and a hole-barrier-dependent ηext Al is sputtered suggest that disruption carrier balance penetration holes emissive layer (EML) into electron transport (ETL) are significant sources device degradation. When ETL was doped with Li,...

Low-energy (sub-keV) bismuth primary ion beams were used for time-of-flight secondary mass spectrometry (ToF-SIMS) to investigate their suitability detecting molecular ions in organic materials. In this study, a 2 keV Bi3+ (667 eV/atom) beam was compared with 54 Bi3++ (18 keV/atom) beam. The detected much less fragmentation some materials the Atomic level most notably suppressed by and deprotonated molecule [M-H+] also significantly suppressed. As result, intact (M+) and, interestingly,...

We have previously reported that low-degradation XPS depth profiling of a polymer was effectively observed using C60 ion beam sputtering. However, the suitable sputtering condition for has not been studied in detail yet. In this paper, we would like to discuss influence angle incidence upon organic polymers. The results obtained are: (1) Relative yield SiO2 increased with incidence, (2) Carbon residue sputtered Si substrate is decreased higher (3) Degradation atomic concentration (C and O...