In this paper, we explore the use of multi-band radio frequency interconnect (or RF-I) with signal propagation at speed light to provide shortcuts in a many core network-on-chip (NoC) mesh topology. We investigate costs associated technology, and examine latency bandwidth benefits that it can provide. Assuming 400mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> die, demonstrate exchange for 0.13% area overhead on active layer, RF-I an...

Pull-in study of an electrostatic microactuator is essential for making the actuation more effective. In this paper, pull-in analysis presented torsion microactuator. The can be used as a microtorsion mirror. A polynomial algebraic equation voltage and angle derived. Two types microactuators fabricated using bulk micromachining are presented. Measurements done on reported, showing deviations within 1% error from calculations.

This paper presents a transmitter operating in the 210-227 GHz 90 nm CMOS, based on Colpitts VCO. The third harmonic of generated VCO fundamental signal is coupled to an on-chip dipole antenna. A simplified model presented for operation and design circuit, which compares well with simulated measured results. achieves EIRP +1.8 dBm at 217 directivity about +10 dBi. circuit consumes 128 mW DC power area 0.53 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML"...

Third-harmonic current generation in a CMOS transistor is modeled and analyzed including the effects of large-signal clipping high-frequency roll-off for application millimeter-wave (mm-wave) frequency multipliers. Using model introducing harmonic rejection techniques, wideband 8.5-dBm output-power x9 multiplier from <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">X</i> -band to xmlns:xlink="http://www.w3.org/1999/xlink">W</i> implemented using...

In this paper, we propose a new way of implementing on-chip global interconnect that would meet stringent challenges core-to-core communications in latency, data rate, and re-configurability for future chip-microprocessors (CMP) with efficient area energy overheads. We discuss the limitation traditional RC-limited interconnects possible benefits multi-band RF-interconnect (RF-I) through differential transmission lines. The physical implementation RF-I its projected performance versus...

This letter presents a J-band radiating source (284-301 GHz) based on differential Colpitts oscillator with an on-chip antenna in 65 nm CMOS. The radiates the third harmonic of oscillation frequency, which is also generated voltage controlled (VCO) itself due to its large signal. An integrated loop serves as load inductance at drains VCO transistors, acting choke fundamental and matched harmonic. has directivity above +9 dBi across tuning range. frequency DC-to-RF radiated power efficiency...

This paper presents the first fully on-chip integrated energy harvester and rectenna at W-Band in 65nm CMOS technology. The designs are based on a 1-stage Dickson voltage multiplier. consists of an dipole antenna with reflector underneath substrate to enhance directivity realized gain. achieve power conversion efficiency 10% 2% respectively 94GHz. stand-alone occupies only 0.0945mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>...

An F-band in-phase/quadrature-phase (I/Q) receiver front-end in 28-nm CMOS for chip-to-chip communication is presented. The consists of a capacitively neutralized differential low-noise amplifier (LNA) chain, passive ring mixer, zero-IF drivers, and novel tunable transformer-based quadrature splitter. This paper discusses the effect capacitive neutralization on common-mode stability, matching losses, noise performance pair. A technique gain noise-figure optimization by core sizing partial...

As chip multiprocessors scale to a greater number of processing cores, on-chip interconnection networks will experience dramatic increases in both bandwidth demand and power dissipation. Fortunately, promising gains can be realized via integration radio frequency interconnect (RF-I) through transmission lines with traditional interconnects implemented RC wires. While prior work has considered the latency advantage RF-I, we demonstrate three further advantages RF-I: (1) RF-I flexibly...

Digital control of the effective dielectric constant a differential mode transmission line is shown up to 60GHz in standard CMOS technology. The increase from 5 over 50 for fixed artificial case. digital controlled (DiCAD) uses MOS switches dynamically phase. DiCAD achieves 50% physically available tuning range with constants varying between 7 and 28. Measured results favorably agree full-wave electromagnetic simulations.

In this paper a two-step transition between CMOS chip and WR-10 waveguide is investigated. The coplanar (CPW) on Duroid to W-band aluminum studied measured results show bandwidth of 49% (67-110 GHz), an average insertion loss 0.35 dB, return below -10 dB throughout the entire band. Wire-bonding then investigated as connection on-chip ground-signal-ground (GSG) pads CPW where printed circuit board 1-dB (including GSG launcher) in W-band. full also used demonstrate packaging 100-GHz...

As chip multiprocessors scale to a greater number of processing cores, on-chip interconnection networks will experience dramatic increases in both bandwidth demand and power dissipation. Fortunately, promising gains can be realized via integration radio frequency interconnect (RF-I) through transmission lines with traditional interconnects implemented RC wires. While prior work has considered the latency advantage RF-I, we demonstrate three further advantages RF-I: (1) RF-I flexibly...

Two fundamental oscillators, a 240 GHz and 272 are demonstrated using the IBM CMOS 32 nm process. The design of both oscillators was based on Colpitts differential topology, where parasitic capacitances device used as part inductor-capacitor tank. process consideration is discussed, well measurement procedures. A simplified model predicting output power voltage-controlled oscillator (VCO) its phase noise presented, comparison to measured results discussed. An level 0.2 mW ( <formula...

A novel technique to extend the tuning range of voltage-controlled oscillators (VCOs) is proposed based on magnetic a transmission line (TL) resonator. controllable distributed coupling in coplanar strip TL used tune parameters general and inductance particular, achieving 222% change at center frequency 60 GHz order achieve wide tuning. This was implemented with standard cross-coupled pair oscillator, an additional varactor. The design 65-nm CMOS technology, achieves 55.1-70.4 (24.6%)...

CMOS technology innovations over the last decades opened doors to possibility of designing fully integrated systems in at THz frequencies. Small antenna sizes frequencies make and silicon attractive for steerable 2D transmitter receiver arrays. Previous works successfully showed THz-source arrays with use on-chip antennas [1-5]. However, it is still a challenge implementing such that are frequency phase locked, significant radiated power efficiency standard without costly additions. In this...

This letter presents a J-band signal source based on third harmonic generation of differential Colpitts voltage controlled oscillator (VCO). The covers frequency range from 209.3 to 233.3 GHz, which corresponds 10.8% total tuning range. is the widest in reported date. VCO was fabricated using 90 nm Mixed-Mode/RF CMOS process; it provides - 6.2 Bm output power at 228 while consuming 48 mA 1.8 V supply, and an estimated phase noise 90.5 dBc/Hz 1 MHz offset carrier.

<?Pub Dtl=""?> The key factor in widespread adoption of Radio Frequency Identification (RFID) technology is tag cost minimization. This paper presents the first low-cost, ultra-low power, passive RFID tag, fully integrated on a single substrate standard CMOS process. system combines 24 GHz, dual on-chip antenna, RF front-end, and C-Flash based, rewritable, non-volatile memory module to achieve full integration. complete was designed fabricated TowerJazz 0.18 µm without any additional mask...

A new topology of a low-power F-band reflection amplifier for active reflectarrays is proposed and demonstrated using CMOS fully depleted silicon-on-insulator 28-nm process. The design enables frequency response center tuning, as well phase control the reflected signal. chip consumes core area only 90 × 80 μm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> incorporated into 2 printed reflectarray antenna, implementing first co-polarized...

We present an analytical model, design, and measurement results on fundamental, harmonic, subharmonic down conversion mixing approaches in 65-nm CMOS around above the transistor cutoff frequency fmax, targeting submillimeter-wave operation. Analytical expressions for are derived compared with simulation results. To investigate how to improve performance of a passive mixer beyond relation between local oscillator (LO) harmonics (including both harmonic amplitude phase), gate bias, gain is...

An innovative topology for W-band energy harvesting is proposed using 65-nm CMOS, including an on-chip antenna. The rectifying circuit based on inverse operation of a differential Colpitts VCO and loop antenna coupled to the circuit. Occupying total area 0.611 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , harvester has peak output power 0.2 mW with efficiency 6%, while rectifier itself achieved measured 21.5%. Implementing 3×3...

The temperature coefficient of current (TCC) CMOS transistors implemented on silicon-on-insulator substrates is theoretically and empirically studied for its potential use in uncooled thermal sensing. Modeling measurements show TCC values subthreshold more than 6%/K, better state the art microbolometer resistance, less -0.4%/K saturation-comparable with metals. Models are shown dependence upon operating point, channel length. A simple semi-empirical model at based long approximation...

Digital circuits implemented in CMOS technology have been the workhorses of high performance computer processors for more than a decade, following Moore's law with exponentially increasing integration and performance. Driven by lower cost, performance, mixed-signal benefits, also has found use analog, recently, RF applications. Now, transistor still improving, wires are becoming limiting factor speed imposing limits on communication bandwidth latency between processing cores memories, both...

<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> A new technique using a left-handed (LH) resonator to generate multiband millimeter-wave carrier signal is proposed in this paper. The LH exhibits nonlinear dispersion characteristic, which enables uneven spacing between resonant frequencies. With <formula formulatype="inline"><tex Notation="TeX">$N$</tex> </formula> stages of the unit cell, there are formulatype="inline"> <tex...