Ossie Douglas

ORCID: 0000-0003-2726-0964
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About
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Research Areas
  • Graphene research and applications
  • Copper Interconnects and Reliability
  • Semiconductor materials and devices
  • 2D Materials and Applications
  • nanoparticles nucleation surface interactions
  • Thermal properties of materials
  • MXene and MAX Phase Materials
  • Gold and Silver Nanoparticles Synthesis and Applications
  • Semiconductor materials and interfaces
  • Perovskite Materials and Applications

University of South Florida
2020-2023

Understanding the phonon characteristics of two-dimensional (2D) molybdenum ditelluride (MoTe2) under strain is critical to manipulating its multiphysical properties. Although there have been numerous computational efforts elucidate strain-coupled properties monolayer MoTe2, empirical validation still lacking. In this work, 1H-MoTe2 uniaxial studied via in situ micro-Raman spectroscopy. Directionally dependent monotonic softening doubly degenerate in-plane E2g1 mode observed with increasing...

10.1021/acs.nanolett.3c03706 article EN Nano Letters 2023-12-15

Abstract Electromigration in metal interconnects remains a significant challenge the continued scaling of integrated circuits towards ever‐smaller single‐nanometer nodes. Conventional damascene architectures barrier/liner layers and conducting cause inevitable compromises between device performance feature dimensions. In contrast to contemporary materials (e.g., Co, Ta, Ru), an ultrathin passivation layer that can effectively mitigate electromigration is needed. At ultimate atomically‐thin...

10.1002/aelm.202100002 article EN publisher-specific-oa Advanced Electronic Materials 2021-04-08

Abstract Goldbeating is the ancient craft of thinning bulk gold (Au) into gossamer leaves. Pioneered by Egyptian craftsmen, modern mechanized iterations this technique can fabricate sheets as thin ∼100 nm. We take inspiration from millennia-old and adapt it to nanoscale regime, using colloidally synthesized 0D/1D Au nanoparticles (AuNPs) highly ductile malleable nanoscopic ingots subjecting them solid-state, uniaxial compression. The applied stress induces anisotropic morphological...

10.1093/pnasnexus/pgad267 article EN cc-by PNAS Nexus 2023-08-01

Abstract Two-dimensional (2D) materials have recently garnered significant interest due to their novel and emergent properties. A plethora of 2D been discovered intensively studied, such as graphene, hexagonal boron nitride, transitionmetal dichalcogenides (TMDCs), other metallic compound MXenes (nitrides, phosphides, hydroxides), well elemental (borophene, germanene, phosphorene, silicene, etc.). Considering the widespread in conventional van der Waals materials, two-dimensional nanosheets...

10.1115/msec2020-8495 article EN Volume 1: Additive Manufacturing; Advanced Materials Manufacturing; Biomanufacturing; Life Cycle Engineering; Manufacturing Equipment and Automation 2020-09-03

Ångström-thin hexagonal boron nitride (hBN) is a highly promising barrier/liner dielectric material for passivating electrical interconnects in ultra-scaled integrated circuits (ICs). In article number 2100002, Michael Cai Wang and co-workers present novel approach to mitigating electromigration nanoscale copper interconnects. Significant improvements the breakdown current density operating lifetime are observed hBN-passivated interconnects, paving way further single-nanometer node scaling...

10.1002/aelm.202170020 article EN Advanced Electronic Materials 2021-06-01
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