Recently, Ga2O3-based self-powered ultraviolet photodetectors have aroused great interest due to their potential applications in civil, medical, and environmental monitoring fields. So far, most p–n junction are fabricated with p-type semiconductors like GaN SiC, which usually nonoxide materials. As a result, the oxidized conductive properties degenerated when constructing Ga2O3 thin film at high growth temperature. In this work, we chose oxide NiO as material used radio-frequency reactive...

Laser-induced graphene (LIG) is a simple, environmentally friendly, efficient, and less costly method, as well can form various shapes on flexible substrate in situ without the use of masks. More importantly, it tune work function LIG easily by changing laser parameters to control transportation carriers. In this work, functions were controlled adjusting frequency or speed laser, series LIG/GaOx Schottky photodetectors formed. When increases, Fermi energy shifted below crossing point Π Π*...

Previous research has shown that the hybridization of N 2p and O orbitals effectively suppresses electrical activity oxygen vacancies in oxide semiconductors. However, achieving N-alloyed Ga2O3 films, known as GaON, poses a significant challenge due to nitrogen's limited solubility material. In this study, new method utilizing plasma-enhanced chemical vapor deposition with high-energy nitrogen plasma was explored enhance By adjusting N2 O2 carrier gas ratio, we could tune thin film's bandgap...

Abstract Gallium oxide ( β ‐Ga 2 O 3 ) is a prominent representative of the new generation wide‐bandgap semiconductors, boasting bandgap ≈4.9 eV. However, growth process materials introduces unavoidable oxygen vacancies (Vo), leading to persistent photoconductivity (PPC), phenomenon that severely hinders device performance. In this study, an innovative approach successfully developed by introducing high p‐orbital energy nitrogen (N). This leads formation hybridized state with 2p orbitals in...

Ultrawide bandgap semiconductor β-Ga2O3 (4.9 eV), with its monoclinic crystal structure, exhibits distinct anisotropic characteristics both optically and electrically, making it an ideal material for solar-blind polarization photodetectors. In this work, epitaxial films were deposited on sapphire substrates different orientations, the mechanisms underlying anisotropy of these investigated. Compared to c-plane sapphire, lattice mismatch between m- or r-plane is more pronounced, disrupting...

The continuous growth in artificial intelligence and high-performance computing has necessitated the development of efficient optoelectronic synapses crucial for neuromorphic (NC). Ga2O3 is an emerging wide-bandgap semiconductor with high deep ultraviolet absorption, tunable persistent photoconductivity, excellent stability toward electric fields, making it a promising component synapses. Currently reported often suffer from complex fabrication processes potential room improvement due to...

Photoelectrochemical (PEC) devices are the most similar artificial to nervous system, which is expected solve problem of complex computer/nervous system interface (solid–liquid interface) and multifunctional integration (photoelectric fusion) required in post-Moore era. Based on different photocurrent ambipolar behavior deep ultraviolet solar-blind spectral photoresponse characteristics α-Ga2O3 β-Ga2O3, we designed constructed Ga2O3 porous nanostructure PEC device with an adjustable bipolar...

Abstract A novel polarization‐sensitive artificial optoelectronic synapse based on β ‐Ga 2 O 3 single‐crystal is proposed in this work, featuring reconfigurable anisotropic vision. series of synaptic activities and image recognition functions are successfully simulated using device. The intriguing performance device, stems from the crystal anisotropy , which confirmed through polarization Raman measurements first‐principles theoretical calculations. Furthermore, a comprehensive analysis...

Abstract Underwater visible light communication often faces risks such as susceptibility to external source interference, signal distortion, and information leakage. The cuprous oxide modified gallium nanorod arrays detector prepared in this study can generate bipolar photocurrents under dual‐wavelength ultraviolet without bias voltage. Based on it, the constructed self‐powered ASCII code system not only reduce power consumption but also significantly enhance anti‐interference capability....

Abstract To address the increasing demand for massive data storage and processing, brain-inspired neuromorphic computing systems based on artificial synaptic devices have been actively developed in recent years. Among various materials investigated fabrication of devices, silicon carbide (SiC) has emerged as a preferred choices due to its high electron mobility, superior thermal conductivity, excellent stability, which exhibits promising potential applications harsh environments. In this...

A heterojunction is an essential strategy for multispectral energy-conservation photodetection its ability to separate photogenerated electron–hole pairs and tune the absorption edge by selecting semiconductors with appropriate bandgaps. broadband ultraviolet (200–410 nm) self-powered photodetector constructed on exfoliated β-Ga2O3/CuI core–shell microwire heterostructure. Benefiting from photovoltaic photoconductive effects, our device performs excellent (UV) discriminability a UVC/visible...

β-Ga2O3 has attracted much attention due to its ultrawide-bandgap (∼4.9 eV) with a high breakdown field (8 MV/cm) and good thermal/chemical stability. In order for be used in electronic optoelectronic devices, epitaxial growth technology of thin films should given priority. However, challenges are associated the trade-off rate crystallization surface roughness conventional epitaxy. Herein, plasma enhanced chemical vapor deposition was grow epilayer, kinetics process been systematically...

Due to their crucial role in ultraviolet communication and monitoring, deep-ultraviolet (DUV) photodetectors have garnered much interest. Recently, Ga2O3 has emerged as the best material for DUV because of its ultrawide bandgap (4.5–4.9 eV), excellent UV photon absorption coefficient, high structural stability, affordability. However, there are several difficulties realizing high-performance Ga2O3-based with a tolerance harsh environments. In this work, nanoscale-thick CuPc/β-Ga2O3 p–n...

To enhance computing power, a broader understanding of semiconductors is imperative. Conventional semiconductor technology has reached its limits, necessitating the exploration and development optoelectronic approaches. Among these, photoelectrochemical (PEC) detector emerged as fresh photodetection paradigm. This study rigorously investigates indispensability advancing PEC logic devices. By judiciously modifying α-Ga2O3 sponge's porous nanorod arrays (NRAs), photocurrent attributes are...

Active matrix organic light-emitting diode (AMOLED) display holds great potential for the next generation visual technologies due to its high light efficiency, flexibility, lightweight, and low-temperature processing. However, suitable thin-film transistors (TFTs) are required realize advantages of AMOLED. Preseparated, semiconducting enriched carbon nanotubes excellent candidates this purpose because their mobility, percentage nanotubes, room-temperature processing compatibility. Here we...

Methylammonium (MA) and formamidinium (FA) are two typical A site cations in lead halide perovskites. Instability of synthesised crystals will degrade the properties photoelectrical device constructed by such MAPbI3 FAPbI3 cubic crystal structure have been demonstrated to be most stable at room temperature. Herein we MA(EA)PbI3 FA(MA)PbI3 single using an inverse-temperature crystallization strategy partially substituting methylammonium with ethylammonium (EA) respectively. The XRD results...

We report high-performance arsenic (As)-doped indium oxide (In2O3) nanowires for transparent electronics, including their implementation in thin-film transistors (TTFTs) and active-matrix organic light-emitting diode (AMOLED) displays. The As-doped In2O3 were synthesized using a laser ablation process then fabricated into TTFTs with indium−tin (ITO) as the source, drain, gate electrodes. nanowire on glass substrates exhibit very high device mobilities (∼1490 cm2 V−1 s−1), current on/off...