Shunli Wang

ORCID: 0000-0003-0485-8082
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About
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Research Areas
  • Advanced Battery Technologies Research
  • Advancements in Battery Materials
  • Electric Vehicles and Infrastructure
  • Fault Detection and Control Systems
  • Reliability and Maintenance Optimization
  • Advanced Algorithms and Applications
  • Advanced Battery Materials and Technologies
  • Advanced DC-DC Converters
  • Electric and Hybrid Vehicle Technologies
  • IoT-based Smart Home Systems
  • Anaerobic Digestion and Biogas Production
  • Control Systems and Identification
  • Advanced Photocatalysis Techniques
  • Ga2O3 and related materials
  • ZnO doping and properties
  • Machine Learning and ELM
  • Advanced battery technologies research
  • Wireless Communication Networks Research
  • Biofuel production and bioconversion
  • Tree-ring climate responses
  • Wireless Power Transfer Systems
  • Climate Change Policy and Economics
  • Human Pose and Action Recognition
  • Covalent Organic Framework Applications
  • Medical Imaging Techniques and Applications

Fudan University
2021-2025

Zhejiang Sci-Tech University
2015-2025

Institute of Environment and Sustainable Development in Agriculture
2020-2024

Chinese Academy of Agricultural Sciences
2020-2024

Southwest University of Science and Technology
2015-2024

Inner Mongolia University of Technology
2023-2024

Sichuan University
2015-2024

Jilin University
2023-2024

Shanghai Technical Institute of Electronics & Information
2023-2024

First Affiliated Hospital of Fujian Medical University
2024

For decades China imported much of the world’s plastic waste; but a recent import ban requires new ideas and systemic change.

10.1126/sciadv.aat0131 article EN cc-by-nc Science Advances 2018-06-01

Laser-induced graphene (LIG) is a simple, environmentally friendly, efficient, and less costly method, as well can form various shapes on flexible substrate in situ without the use of masks. More importantly, it tune work function LIG easily by changing laser parameters to control transportation carriers. In this work, functions were controlled adjusting frequency or speed laser, series LIG/GaOx Schottky photodetectors formed. When increases, Fermi energy shifted below crossing point Π Π*...

10.1063/5.0080855 article EN Applied Physics Letters 2022-03-07

Previous research has shown that the hybridization of N 2p and O orbitals effectively suppresses electrical activity oxygen vacancies in oxide semiconductors. However, achieving N-alloyed Ga2O3 films, known as GaON, poses a significant challenge due to nitrogen's limited solubility material. In this study, new method utilizing plasma-enhanced chemical vapor deposition with high-energy nitrogen plasma was explored enhance By adjusting N2 O2 carrier gas ratio, we could tune thin film's bandgap...

10.1021/acs.jpclett.3c01368 article EN The Journal of Physical Chemistry Letters 2023-07-11

Abstract Gallium oxide ( β ‐Ga 2 O 3 ) is a prominent representative of the new generation wide‐bandgap semiconductors, boasting bandgap ≈4.9 eV. However, growth process materials introduces unavoidable oxygen vacancies (Vo), leading to persistent photoconductivity (PPC), phenomenon that severely hinders device performance. In this study, an innovative approach successfully developed by introducing high p‐orbital energy nitrogen (N). This leads formation hybridized state with 2p orbitals in...

10.1002/adom.202302294 article EN Advanced Optical Materials 2024-01-15

Ultrawide bandgap semiconductor β-Ga2O3 (4.9 eV), with its monoclinic crystal structure, exhibits distinct anisotropic characteristics both optically and electrically, making it an ideal material for solar-blind polarization photodetectors. In this work, epitaxial films were deposited on sapphire substrates different orientations, the mechanisms underlying anisotropy of these investigated. Compared to c-plane sapphire, lattice mismatch between m- or r-plane is more pronounced, disrupting...

10.1021/acs.jpclett.4c00561 article EN The Journal of Physical Chemistry Letters 2024-04-01

The continuous growth in artificial intelligence and high-performance computing has necessitated the development of efficient optoelectronic synapses crucial for neuromorphic (NC). Ga2O3 is an emerging wide-bandgap semiconductor with high deep ultraviolet absorption, tunable persistent photoconductivity, excellent stability toward electric fields, making it a promising component synapses. Currently reported often suffer from complex fabrication processes potential room improvement due to...

10.1063/5.0183718 article EN Applied Physics Letters 2024-01-08

Monitoring various internal parameters plays a core role in ensuring the safety of lithium-ion batteries power supply applications. It also influences sustainability effect and online state charge prediction. An improved multiple feature-electrochemical thermal coupling modeling method is proposed considering low-temperature performance degradation for complete characteristic expression multi-dimensional information. This to obtain parameter influence mechanism with multi-variable...

10.23919/pcmp.2023.000257 article EN cc-by Protection and Control of Modern Power Systems 2024-05-01
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