A5101920489- Perovskite Materials and Applications
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Chalcogenide Semiconductor Thin Films
- Quantum Dots Synthesis And Properties
- Thermal Expansion and Ionic Conductivity
- Silicon and Solar Cell Technologies
- Ferroelectric and Negative Capacitance Devices
- AI in cancer detection
- Infrastructure Maintenance and Monitoring
- solar cell performance optimization
- Graphene research and applications
- Image and Object Detection Techniques
- Conducting polymers and applications
- Cervical Cancer and HPV Research
- Asphalt Pavement Performance Evaluation
- Silicon Carbide Semiconductor Technologies
- 2D Materials and Applications
- Mobile Learning in Education
- Radio Frequency Integrated Circuit Design
- Robotics and Automated Systems
- Nanowire Synthesis and Applications
- Teaching and Learning Programming
- Thermal properties of materials
- Solid-state spectroscopy and crystallography
Jamalpur Science and Technology University
2024
Gopalganj Science and Technology University
2024
Bangladesh Army University of Science and Technology
2023
Bangladesh University of Engineering and Technology
2022-2023
Shahjalal University of Science and Technology
2020
Bangladesh University of Business and Technology
2020
United International University
2015
In this paper, a physically based two-dimensional analytical model of potential profile is proposed for both symmetric and asymmetric p-type-doped Double Gate Junctionless Field Effect Transistors (DG JLFETs). The keeps its validity in the subthreshold region. order to establish model, 2-D Poisson's equation solved channel region while assuming cubic distribution along We also propose Stack-Oxide (DGS check out our we have used SILVACO ATLAS simulator. Comparison made between different...
In this work, we have analyzed the performance of symmetric and asymmetric structures double gate junctionless field effect transistor (DG JLFET) in subthreshold region. order to find out characteristic parameters, used SILVACO ATLAS simulator. Different parameters like I-V characteristic, on state off current ratio (Ion/Ioff), swing (SS), drain induced barrier lowering (DIBL), threshold voltage (Vth) are explored from simulation model. These compared between different device. We behavior...
This work develops an analytical model of the base transit time for SiGe-heterojunction bipolar transistors (HBT) having non-uniformly and heavily doped considering field-dependence carrier mobility under moderate-level injection. The proposed considers all non-ideal effects found in literature owing to non-uniformity heavy levels doping. evolving mathematical intractability has been resolved by applying exponential approximation technique concept perturbation theory. Simulation results...
Cervical cancer is women's second most frequent malignancy globally, with a 60% mortality rate. Early identification through routine checkups crucial because cervical has long latent period and begins no overt signs. One of the evident barriers to not having an early detection time required for diagnostic process, which also accounts indifference regarding its automation. These uncertainties occur several reasons, while one prominent causes providing report by computer-aided process only...
In this paper, a heavily doped n+pocket channel asymmetric Double Gate Junctionless Field Effect Transistor (DG-JLFET) with SiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> and high-k oxide thin layer-based biosensor for detecting pathogens, molecules, antigens, enzymes efficiently has been developed. The nanogap cavity area is designed silicon dioxide layer. charged non-charged biomolecules that are trapped to the adhesion layer in...