- Chalcogenide Semiconductor Thin Films
- Quantum Dots Synthesis And Properties
- Perovskite Materials and Applications
- X-ray Diffraction in Crystallography
- Crystallization and Solubility Studies
- Phase-change materials and chalcogenides
- Advanced Semiconductor Detectors and Materials
- Semiconductor materials and interfaces
- Conducting polymers and applications
- Crystallography and molecular interactions
- Copper-based nanomaterials and applications
- ZnO doping and properties
- 2D Materials and Applications
- Nanocomposite Films for Food Packaging
- MXene and MAX Phase Materials
- International Arbitration and Investment Law
- Advanced Photocatalysis Techniques
- Advanced Thermoelectric Materials and Devices
- Luminescence Properties of Advanced Materials
- Silicon and Solar Cell Technologies
- Silicon Nanostructures and Photoluminescence
- Photoreceptor and optogenetics research
- Solid State Laser Technologies
- Transition Metal Oxide Nanomaterials
- Thin-Film Transistor Technologies
Hebei University
2016-2025
Huaqiao University
2024
Baoding University
2017-2020
Abstract Sb 2 (S,Se) 3 is identified as a promising light‐harvesting material due to its excellent capability, abundant elemental storage, and stability. Here hydrothermal method demonstrated for the direct deposition of film, in which it found that ethylenediaminetetraacetic acid (EDTA) strong coordination additive able control nucleation process obtaining high‐quality films. With that, milestone performance 10.5% efficiency achieved. This achievement indicates great potential an...
Binary Sb2 Se3 semiconductors are promising as the absorber materials in inorganic chalcogenide compound photovoltaics due to their attractive anisotropic optoelectronic properties. However, solar cells suffer from complex and unconventional intrinsic defects low symmetry of quasi-1D crystal structure resulting a considerable voltage deficit, which limits ultimate power conversion efficiency (PCE). In this work, creation compact films with strong [00l] orientation, high crystallinity,...
We report systematic design and formation of plasmonic perovskite solar cells (PSCs) by integrating Au@TiO2 core-shell nanoparticles (NPs) into porous TiO2 and/or semiconductor capping layers. The effects in the formed PSCs are examined. most efficient configuration is obtained incorporating NPs both layers, which increases power conversion efficiency (PCE) from 12.59% to 18.24%, demonstrating over 44% enhancement, compared with reference device without metal NPs. PCE enhancement mainly...
Energy band alignment plays an important role in heterojunction thin-film solar cells. In this work, we report the application of ternary CdxZn1–xS buffer layers antimony selenide (Sb2Se3) The results our study revealed that Cd/Zn element ratios not only affected optical gap buffers but also modified at junction interface. A Sb2Se3 cell with optimal conduction-band offset value (0.34 eV) exhibited efficiency 6.71%, which represents a relative 32.1% enhancement as compared to reference...
Abstract Environmentally benign and potentially cost‐effective Sb 2 Se 3 solar cells have drawn much attention by continuously achieving new efficiency records. This article reports a compatible strategy to enhance the of planar n–i–p through surface modification an architecture with oriented 1D van der Waals material, trigonal selenium (t‐Se). A seed layer assisted successive close spaced sublimation (CSS) is developed fabricate highly crystalline absorbers. It found that absorber exhibits...
Abstract More than 80% of biological learning information is received through the visual system; therefore, artificial vision systems have garnered continual interest in field intelligence technologies. Simulating activities a range human systems, such as discrimination, memory, and induced muscular activity, which still remains challenge. The authors develop high‐speed multifunctional system capable recognizing, memorizing, actuating self‐protection by combining Sb 2 Se 3 /CdS‐core/shell...
Abstract Antimony selenosulfide (Sb 2 (S,Se) 3 ) is an emerging low‐cost, nontoxic solar material with suitable bandgap and high absorption coefficient. Developing effective methods for fabricating high‐quality films would benefit the device efficiency improvement deepen fundamental understanding on optoelectronic properties. Herein, equipment developed that allows online introduction of precursor vapor during reaction process, enabling sequential coevaporation Sb Se S powders deposition...
Abstract High‐efficiency antimony selenosulfide (Sb 2 (S,Se) 3 ) solar cells are often fabricated by hydrothermal deposition and also comprise a CdS buffer layer. Whereas the use of toxic materials such as cadmium compounds should be avoided, both these issues hinder scaling up to large areas market access. For this reason, co‐sublimation is studied manufacturing process for active layer well Cd‐free layers. To further improve power conversion efficiency (PCE), graded bandgap profile...
Anisotropic carrier transport and deep-level defect of antimony selenosulfide (Sb2(S,Se)3) absorber are two vital auses restraining the photovoltaic performance this emerging thin-film solar cell. Herein, chelate engineering is proposed to prepare high-quality Sb2(S,Se)3 film based on hydrothermal deposition approach, which realizes desirable passivated defects by using tetrahedral PO4 3- ion in dibasic sodium phosphate (Na2HPO4, DSP). The Lewis structure, one hand form [(SbO)3(PO4)]...
An antimony sulfide (Sb<sub>2</sub>S<sub>3</sub>) semiconductor is appealing as a promising light absorber due to its suitable bandgap (1.5–1.7 eV), ‘one dimensional’ crystal structure and non-toxic constituents.
Abstract The Cu(In,Ga)Se 2 (CIGS) heterojunction, as a mature and high efficiency thin‐film solar cell, is rarely studied photodetector, especially in flexible substrates. In this paper, the structure of an ITO/ZnO/CdS/CIGS/Mo heterojunction grown on polyimide (PI) substrate to form CIGS photodetector. photodetector can work very wide band ranging from 350 1200 nm with responsivity up 1.18 A W −1 (808 nm), detectivity 6.56 × 10 Jones (cmHz 1/2 ), response time 70 (/88) ms, respectively....
Abstract Deep‐level defects in semiconductor materials usually induce carrier trapping and non‐radiative recombination. However, caused by unintentional contaminants antimony selenide (Sb 2 Se 3 ) solar cells have rarely been reported. Herein, the correlation between defect properties impurities Sb absorber is investigated, which prepared injection vapor deposition with source purities ranging from 99.9% to 99.9999%. The analysis of deep‐level transient spectra reveals that an increase...
Antimony selenide (Sb2 Se3 ) nanorod arrays along the [001] orientation are known to transfer photogenerated carriers rapidly due strongly anisotropic one-dimensional crystal structure. With advanced light-trapping structures, Sb2 array-based solar cells have excellent broad spectral response properties, and higher short-circuit current density than conventional planar structured thin film cells. However, interface engineering for cell is more crucial increase performance, because it...
The unique one-dimensional crystal structure and low-temperature growth techniques make antimony selenide (Sb2Se3) a promising potential material for flexible lightweight photovoltaic applications. buried Sb2Se3/molybdenum back-contact interface is the main obstacle to high-efficiency Sb2Se3 solar cells in substrate configuration. To improve crystalline quality of enhance hole extraction, we introduce new lead (PbSe) transition layer, fabricated at room temperature, interface. concomitant...
High-quality heterojunction is crucial for achieving the high power conversion efficiency (PCE) in antimony selenosulfide (Sb2(S,Se)3) solar cells. Here, we introduce lithium fluoride (LiF) doping of precursor solution...
Antimony selenide (Sb2Se3) is emerging as an optically active material for optoelectronic devices. Understanding the carrier nonradiative recombination processes in Sb2Se3 crucial improvement of devices' performance. In this work, was investigated by transient absorption spectrum on broad time scale from hundred femtoseconds to several microseconds. The evolution has been associated with free and trapped process. Our temperature varying measurement also confirmed that insensitive...
Abstract Antimony selenide (Sb 2 Se 3 ) has great potential as a light‐absorbing layer in thin‐film photovoltaics because of its excellent photoelectric properties and superior stability. Presently, high‐efficiency Sb solar cells use heterojunction consisting p‐type absorber an n‐type CdS layer. The power conversion efficiency (PCE) is restricted by the low carrier concentration layer, complex intrinsic deep defects , unsuitable energy level band alignment junction. This paper presents...
Developing the Cd-free electron transport layer (ETL) is a crucial subject in field of antimony selenide (Sb2Se3) solar cells. At present, power conversion efficiency (PCE) Sb2Se3 cell still substantially lower than that CdS-based devices. It significant to reveal transfer features Sb2Se3/CdS heterojunction and Sb2Se3/Cd-free ETL for development with high PCE. In this work, Sb2Se3/Cd Sb2Se3/ZnO were systematically investigated from view PCE, trap state passivation, interface charge...
We demonstrate direct generation of sub-40 fs pulses from a diode-pumped mode-locked laser using an ytterbium-yttrium codoped multi-component alkaline-earth fluoride crystal and semiconductor saturable absorber mirror. The Yb,Y:(Ca,Sr)F2 delivers soliton as short 35 at 1056.7 nm, with average output power 182 mW repetition rate ∼65.7 MHz. By increasing the transmittance coupler, scales to 322 somewhat longer pulse duration (49 fs) 1052.5 corresponding peak 87.9 kW optical efficiency 32.4%....
The quasi-1D antimony selenosulfide (Sb2(S,Se)3) light-harvesting material has attracted tremendous attention for photovoltaic applications because of its superior materials and optoelectronic properties. However, one the critical obstacles faced by Sb2(S,Se)3 solar cells is presence many defects in absorbers, especially those deep-level anion-vacancy which are prone to serving as recombination centers. In this work, an effective defect engineering strategy via magnesium chloride (MgCl2)...
Abstract Short‐wave infrared (SWIR) detectors are becoming increasingly vital in areas such as autonomous driving, food inspection, medical diagnostics, and scientific exploration. Recently, Te x Se 1–x has exhibited exceptional promise for photodetection. However, ‐based devices still struggle with excessively high dark current subpar performance. This work presents an interface engineering via selenization the SnO /Te 0.73 0.27 heterojunction SWIR photodetector. The post‐selenization...