A5102828875- Ion-surface interactions and analysis
- Semiconductor materials and interfaces
- Graphene research and applications
- Silicon Nanostructures and Photoluminescence
- Electron and X-Ray Spectroscopy Techniques
- Ga2O3 and related materials
- ZnO doping and properties
Novosibirsk State University
2021-2022
Institute of Semiconductor Physics
2022
Russian Academy of Sciences
2022
The radiation-induced phenomena of CaSi2 crystal growth were investigated, both directly during the epitaxial CaF2 on Si (111) and film irradiation with fast electrons after its formation, while maintaining specified thickness, substrate temperature radiation dose. Irradiation in process leads to formation nanowhiskers an average size 5 µm oriented along direction <110>. electron formed film, under similar conditions, homogeneous nucleation crystals their proliferation as inclusions...
The possibility of fabricating two-dimensional Si layers on a CaF 2 /Si(111) film by molecular beam epitaxy is studied. growth conditions, under which the regions are formed, found. Raman spectroscopy, transmission electron microscopy, photoluminescence, and paramagnetic resonance (EPR) studies have shown that formed in epitaxial structures prepared deposition one to three biatomic surface at temperature 550°С. spectra these exhibit narrow peak 418 cm –1 , due light scattering vibrations...