A5006790128- Chalcogenide Semiconductor Thin Films
- Quantum Dots Synthesis And Properties
- Silicon Nanostructures and Photoluminescence
- Advanced Semiconductor Detectors and Materials
- Semiconductor materials and interfaces
- Copper-based nanomaterials and applications
- Luminescence Properties of Advanced Materials
- Semiconductor materials and devices
- Nanowire Synthesis and Applications
- Photorefractive and Nonlinear Optics
- Ion-surface interactions and analysis
- Photonic and Optical Devices
- ZnO doping and properties
- Phase-change materials and chalcogenides
- Thin-Film Transistor Technologies
- Solid State Laser Technologies
- Glass properties and applications
- Photonic Crystals and Applications
- Ga2O3 and related materials
- Semiconductor Quantum Structures and Devices
- Electron and X-Ray Spectroscopy Techniques
- Silicon and Solar Cell Technologies
- Perovskite Materials and Applications
- Plasmonic and Surface Plasmon Research
- Iron oxide chemistry and applications
National Academy of Sciences of Belarus
2015-2024
Institute of Chemistry of New Materials of the National Academy of Sciences of Belarus
2018-2021
Ural Federal University
2018
Institute of Solid State Chemistry
2018
M.N. Mikheev Institute of Metal Physics
2018
Northumbria University
2018
Tallinn University of Technology
2018
University of Strathclyde
2018
Skolkovo Institute of Science and Technology
2018
Institute of Semiconductor Physics
2017
Photoluminescence properties of highly strained Ge/Si multi-layer heterostructures with incorporated groups laterally ordered SiGe quantum dots are studied in the wide range temperatures from 4.2 to 300 K. The phononless radiative recombination mechanism is found be dominating. A photoluminescence signal observed up activation energy (≈211 meV) thermal quenching can associated transition holes valence band states Ge wetting layer.
Sol-gel technology has attracted attention in the fabrication of diverse luminescent materials and thin film structures, with forms that range from powders to microcavities. The optical properties sol-gel-derived structures depend on sol composition, deposition, heat treatment conditions, as well thicknesses other factors. Investigations upconversion luminescence lanthanides are also ongoing. In this study, we synthesized three different types using same sol, which corresponded a...
Thin films of Cu2ZnSnSe4 (CZTSe) with copper deficiency and zinc excess were fabricated at Northumbria University by the selenisation metallic precursors deposited on Mo/glass bare glass substrates. Absorption photoluminescence (PL) measurements used to examine film whereas produce a solar cell efficiency 8.1%. Detailed temperature excitation intensity analysis PL spectra allows identification main recombination mechanisms as band-to-tail band-to-band transitions. The latter transition was...
Abstract The photoluminescence (PL) of the combined Ge/Si structures representing a combination large (200–250 nm) GeSi disk-like quantum dots (nanodisks) and four-layered stacks compact groups smaller (30 grown in strain field nanodisks was studied. multiple increase PL intensity achieved by variation parameters vertically aligned dot groups. experimental results were analyzed on basis calculations energy spectra, electron hole wave functions. It found that arrangement provides effective...
Semiconductor Cu2ZnSn(SxSe1–x)4 (CZTSSe) solid solution is considered as a perspective absorber material for solar cells. However, during its synthesis or deposition, any modification in the resulting optical properties hardly predicted. In this study, experimental and theoretical analyses of CZTSSe bulk crystals thin films are presented based on Raman scattering absorption spectroscopies together with compositional morphological characterizations. studied upon change x = S/(S + Se) aspect...
Erbium upconversion (UC) photoluminescence (PL) from sol-gel derived barium titanate (BaTiO3:Er) xerogel structures fabricated on silicon, glass or fused silica substrates has been studied. Under continuous-wave excitation at 980 nm and nanosecond pulsed 1540 nm, the demonstrate room temperature PL with several bands 410, 523, 546, 658, 800 830 corresponding to 2H9/2 → 4I15/2, 2H11/2 4S3/2 4F9/2→ 4I15/2 4I9/2→ transitions of Er3+ ions. The intensity erbium UC increases when an additional...
Erbium-doped barium titanate (BaTiO 3 :Er) xerogel film with a thickness of about 500 nm was formed on the porous strontium ([Formula: see text] Si substrate after annealing at 800[Formula: text]C or 900[Formula: text]C. The elaborated structures show room temperature upconversion luminescence under 980 excitation photoluminescence (PL) bands 523, 546, 658, 800 and 830 corresponding to 2 [Formula: 4 text], text][Formula: transitions trivalent erbium. Raman X-ray diffraction (XRD) analysis...
Stimulated emission and lasing in Cu(In,Ga)Se2 thin films have been demonstrated at a temperature of 20 K using excitation by nanosecond pulsed N2 laser with power densities the range from 2 to 100 kW cm−2. Sharp narrowing photoluminescence band, superlinear dependence its intensity on power, as well stabilization spectral position full-width half-maximum band were observed increasing intensity. The stimulated threshold was determined be A gain value 94 cm−1 has estimated variable stripe...
The photoluminescence (PL) properties of combined Ge/Si structures representing a combination large (200–250 nm) SiGe disk‐like quantum dots (QDs) and the groups smaller (40–50 laterally ordered QDs grown on nanodisk surface are studied. experimental results analyzed basing calculations energy spectra, electron hole wave functions. It is found that strain accumulation in multi‐layered structure main factor providing room temperature PL. new type QD should provide observation enhanced PL from...
Cu2ZnSnSe4 (CZTSe) is a semiconductor used as the absorber layer in highly promising sustainable thin film solar cells. The authors study effect of Ar+ etching copper deficient and zinc excess CZTSe films deposited on Mo/glass substrates surface elemental composition, measured by x-ray photoelectron spectroscopy, photoluminescence (PL) spectra. Low temperature PL spectra reveal broad asymmetrical band at 0.95 eV. excitation intensity dependencies this suggest that it free-to-bound (FB)...
Hybrid structures containing Ag nanoparticles and GeSi quantum dots were developed using the self-organization of metal nanoislands on surface a strained semiconductor structure. The enhanced photoluminescence from (QDs) coupled with was obtained. epitaxially grown top multilayered QDs support plasmon resonance that can be tuned to QD emission wavelength by changing nanoparticle parameters. numerical modeling allows attributing this effect increase recombination rate due coupling emitters...
The photoluminescence (PL) of Ge/Si nanostructures synthesized by using Ge+ ion bombardment is studied. structure represents a Si substrate with GeSi nanoclusters created 80 keV Ge implantation fluence ∼1015 ions/cm2 and subsequent thermal annealing. PL measurements confirm the advantage structures over usual epitaxial quantum dots. presence defects produced results in pronounced at telecom wavelengths up to room temperature. provide basis for creating efficient light emitters compatible...
The electronic structure of the solar cell absorber CuInSe2 is studied using magneto-transmission in thin polycrystalline films at magnetic fields up to 29 T. A, B, and C free excitons are resolved absorption spectra zero field a Landau level fan generated by diamagnetic exciton recombination observed for above 7 dependence band binding energy on fields, calculated hydrogenic approximation, used determine Rydberg 0 T (8.5 meV), gap (1.2828 eV), hole effective mass mso = (0.31 ± 0.12)m0...
Cu2ZnSnSe4 (CZTSe) is one of the leading candidates for absorber layer in sustainable solar cells. Thin films CZTSe with a near stoichiometric [Cu]/[Zn + Sn] were used to produce cells conversion efficiency η = 6.4% by standard cell processing including KCN etching and deposition CdS ZnO. Both examined using photoluminescence (PL) analyse nature radiative recombination excitation (PLE) at 4.2 K determine bandgap (Eg). Low temperature PL spectra reveal an intense band P1 0.81 eV low intensity...
The possibility of fabricating two-dimensional Si layers on a CaF 2 /Si(111) film by molecular beam epitaxy is studied. growth conditions, under which the regions are formed, found. Raman spectroscopy, transmission electron microscopy, photoluminescence, and paramagnetic resonance (EPR) studies have shown that formed in epitaxial structures prepared deposition one to three biatomic surface at temperature 550°С. spectra these exhibit narrow peak 418 cm –1 , due light scattering vibrations...