A5083852803- Silicon Nanostructures and Photoluminescence
- Diamond and Carbon-based Materials Research
- Nanowire Synthesis and Applications
- Semiconductor materials and devices
- Silicon and Solar Cell Technologies
- High-pressure geophysics and materials
- Thin-Film Transistor Technologies
- Ion-surface interactions and analysis
- Metal and Thin Film Mechanics
- Electronic and Structural Properties of Oxides
- Advanced Surface Polishing Techniques
- Semiconductor materials and interfaces
- Particle Detector Development and Performance
- Advancements in Semiconductor Devices and Circuit Design
- Photonic and Optical Devices
- Luminescence Properties of Advanced Materials
- Anodic Oxide Films and Nanostructures
- Laser-induced spectroscopy and plasma
- Quantum Dots Synthesis And Properties
- Gas Sensing Nanomaterials and Sensors
- Advanced Semiconductor Detectors and Materials
- Advanced Photonic Communication Systems
- Boron and Carbon Nanomaterials Research
- Glass properties and applications
- Laser Material Processing Techniques
Belarusian State University
2014-2023
National Academy of Sciences of Belarus
2020
Vilnius University
2020
Lawrence Livermore National Laboratory
2020
Belarusian State University of Informatics and Radioelectronics
1995-2003
Erbium photoluminescence at room temperature and 77 K has been observed from porous silicon doped with erbium a spin-on silica gel film. incorporation into dioxide the surface of rapid thermal processing temperatures higher than 1223 were found to be necessary prerequisite for erbium-related luminescence in silicon. No diffusion monocrystalline films was observed. The depth-dependent concentration bulk determined by secondary-neutral- secondary-ion-mass spectrometry depth profiling....
Porous silicon lattice deformation and its evolution with storage time are the main subjects of present investigation. Transmission electron microscopy, x‐ray diffractometry, electronic paramagnetic resonance studies reported. Silicon wafers 0.01 Ω cm resistivity n+‐type (111) orientation were used as starting material. The porous layers 1.8 g/cm3 volume density formed by anodization in 12% HF aqueous solution at current 20 mA/cm2. as‐grown stored air atmosphere for a long subjected to...
The operational characteristics of capacitor-type detectors based on HPHT and CVD diamond have been investigated using perpendicular parallel injection carrier domain regimes. Simulations the drift-diffusion current transients implemented by dynamic models Shockley-Ramo's theorem, under localized surface domains bulk charge carriers. bipolar regimes analyzed for photo-induced (packet) excess formation polarization effects dependent detector biasing voltage revealed. screening ascribed to...
Carrier-transport mechanisms are studied in high-purity diamond irradiated with 6 MeV electrons the dose range of 1012–1016 cm−2 and annealed at different temperatures up to 1450 °C. Lifetimes diffusion coefficients extracted using two pump–probe techniques based on free-carrier absorption transient-grating principles then correlated corresponding defect evolution from spectroscopic measurements. The neutral monovacancy is revealed as main carrier recombination center as-irradiated diamond,...
We report 77 K Photoluminescence (PL) and Excitation (PLE) spectroscopies of Er ions incorporated with Fe in oxidized porous silicon (OPS) the form 5–50 nm sized clusters containing Fe, O, Er. Twenty sharp (FWHM about 0.4 meV) PL s peaks related to transitions between highly split levels 4I13/2 4I15/2 multiplets were observed. Two different centers having cubic lower than symmetries identified. The photoluminescence excitation spectrum 1533 peak comprises no resonant features but a broad...