A5049496661- Ion-surface interactions and analysis
- Metal and Thin Film Mechanics
- Semiconductor materials and devices
- Electron and X-Ray Spectroscopy Techniques
- Thin-Film Transistor Technologies
- Diamond and Carbon-based Materials Research
- Silicon and Solar Cell Technologies
- Silicon Nanostructures and Photoluminescence
- Integrated Circuits and Semiconductor Failure Analysis
- Nuclear Physics and Applications
- Plasma Diagnostics and Applications
- Mass Spectrometry Techniques and Applications
- X-ray Spectroscopy and Fluorescence Analysis
- Fusion materials and technologies
- Analytical chemistry methods development
- Boron and Carbon Nanomaterials Research
- Laser-induced spectroscopy and plasma
- Atomic and Molecular Physics
- Copper Interconnects and Reliability
- Semiconductor materials and interfaces
- Advanced Materials Characterization Techniques
- Nuclear Materials and Properties
- Anaerobic Digestion and Biogas Production
- Surface Roughness and Optical Measurements
- nanoparticles nucleation surface interactions
University of Hohenheim
2022-2024
University of Kaiserslautern
2003-2022
Institut für Oberflächen- und Schichtanalytik GmbH
1995-2004
Schrodinger (United States)
1987-2000
Federal Foreign Office
1998
Praxis
1990
Clausthal University of Technology
1975-1983
University of Würzburg
1966-1974
The density of inductively excited low pressure h.f. plasmas has been measured as a function small transverse static magnetic field for various levels the power applied to discharge. Evidence is given plasma excitation by zero and first order electron cyclotron wave resonance. Characteristic differences between results at high powers are discussed with simple model absorption electrons.
Erbium photoluminescence at room temperature and 77 K has been observed from porous silicon doped with erbium a spin-on silica gel film. incorporation into dioxide the surface of rapid thermal processing temperatures higher than 1223 were found to be necessary prerequisite for erbium-related luminescence in silicon. No diffusion monocrystalline films was observed. The depth-dependent concentration bulk determined by secondary-neutral- secondary-ion-mass spectrometry depth profiling....
Diffusion controlled solid-state reactions during the annealing of Al/Ni multilayers deposited by rf magnetron sputtering onto silicon substrates have been studied. The samples with an overall atomic concentration ${\mathrm{Al}}_{0.5}{\mathrm{Ni}}_{0.5}$ consisted four Ni and Al sublayers a double layer thickness 50.3 nm. temperature induced compositional structural changes periods 45 min were determined Auger electron spectroscopy (AES) sputter depth profiling x-ray diffraction. Up to 120...