A5004739300- Silicon and Solar Cell Technologies
- Thin-Film Transistor Technologies
- Silicon Nanostructures and Photoluminescence
- Semiconductor materials and interfaces
- Semiconductor materials and devices
- ZnO doping and properties
- Nanowire Synthesis and Applications
- Ion-surface interactions and analysis
- Chalcogenide Semiconductor Thin Films
- Integrated Circuits and Semiconductor Failure Analysis
- Physics of Superconductivity and Magnetism
- Quantum Dots Synthesis And Properties
- Gas Sensing Nanomaterials and Sensors
- Advancements in Semiconductor Devices and Circuit Design
- High-pressure geophysics and materials
- Diamond and Carbon-based Materials Research
- Copper-based nanomaterials and applications
- Hydrogen Storage and Materials
- Photovoltaic Systems and Sustainability
- Muon and positron interactions and applications
- Advanced Surface Polishing Techniques
- Ammonia Synthesis and Nitrogen Reduction
- Ga2O3 and related materials
- Advanced ceramic materials synthesis
- Atomic and Molecular Physics
SINTEF
2015-2024
SINTEF Industry
2018-2023
University of Oslo
2005-2022
Madurai Kamaraj University
2022
Universidade Nova de Lisboa
2022
University of Hagen
2000-2016
Centre National de la Recherche Scientifique
2016
Institut de Physique et Chimie des Matériaux de Strasbourg
2016
Norwegian University of Science and Technology
2012
Institute for Energy Technology
2007-2010
Structural phase stability, electronic structure, optical properties, and high-pressure behavior of polytypes ${\mathrm{In}}_{2}{\mathrm{O}}_{3}$ in three space group symmetries $I{2}_{1}3$, $Ia\overline{3}$, $R\overline{3}$ are studied by first-principles density-functional calculations. From structural optimization based on total energy calculations, lattice positional parameters have been established, which found to be good agreement with the corresponding experimental data except for...
Silicon nanowire-based solar cells received increasing attention due to their enhanced light harvesting properties and the potential use low-cost materials produce comparable with those on costly monocrystalline counterparts. It is essential improve performance of nanowire by suppressing surface recombination. A multiple core (crystalline silicon nanowires)–shell heterojunction cell has been fabricated deal this problem. To end, an ultrathin passivating Al2O3 tunnel layer was deposited...
Kesterite Cu2ZnSnS4 (CZTS) is a very promising absorber material for low cost and high efficiency thin film photovoltaic cells due to its direct band gap absorption coefficient. In this work, CZTS layers were deposited onto Mo-coated glass substrates using single step electrodeposition process. Sulfurization treatment was performed under Argon atmosphere at 500 °C. The effect of the deposition time in range 10 min- 40 min investigated. X-ray diffraction Raman spectroscopy have confirmed...
Considering the boom of Si solar cell installation, it is necessary to establish a process for recycling from End-of-life photovoltaics (PVs). Silicon in PVs synthetically doped and coated by various elements hence dedicated methods will be required Si, back SoG-Si. In this research, shredded cells studied means vacuum refining process. research rejected after firing step are treated acid etching techniques remove Al layer Ag finger on front side cells, providing product called de-metallized...
Systematic studies using density functional theory have shown that some hydrides possess the features of semiconductors. These include larger fundamental band gap, well dispersed bottom-most conduction and/or top-most valence band, small electron/hole effective masses and intrinsic carrier concentration. It is demonstrated depending upon composition, a wide range gap values hence they can be regarded as materials for narrow to semiconducting applications. The possibility designing...
The hydrogen-plasma-accelerated formation of shallow thermal donors in silicon has been studied for a wide range doping concentration and interstitial oxygen content by electrical spectroscopic techniques. plasma-hydrogenated material heat treated different times the temperature . It is shown that, besides (OTDs), hydrogen-related (STDHs) also play crucial role hydrogen-assisted creation excess carriers. impact factors on introduction rate will be discussed, whereby strong played type (i.e.,...
Abstract Emissive properties of ZnO are great interests in terms the UV LED device design. The persistent “green” luminescence due to deep defect is an obstacle for obtaining intense emission, expected from ZnO. We report positive role thermally diffused H toward quenching emission It suggested that hydrogen passivates defects responsible DLE, resulting efficient near band edge luminescence. As‐grown ZnO/SiN x :H/Si films, deposited at 350 °C demonstrate narrow peaks 380 nm and a ratio...
The bandstructure of ⟨110⟩ silicon nano wires (SiNWs) with diameters (d) up to 6.1 nm were studied using density functional theory. Three types surface termination investigated: H, F, and OH; all giving quantum confinement induced direct bandgaps in the investigated size range. Comparison calculated results reported experimental values showed that trends behaviour well reproduced. By studying relative decrease global local minima conduction band minimum increasing d, it was possible predict...
We have performed comparative studies of divacancy $({\mathrm{V}}_{2})$ annealing in hydrogenated and nonhydrogenated Si by deep level transient spectroscopy. It is shown that the samples demonstrate formation divacancy-oxygen $({\mathrm{V}}_{2}\mathrm{O})$ complex during ${\mathrm{V}}_{2},$ while ${\mathrm{V}}_{2}$ without correlated growth electrically active centers. No substantial divacancy-hydrogen $({\mathrm{V}}_{2}\mathrm{H})$ complexes observed samples. suggested dominant mechanism...
Using first-principles density functional calculations with AlH3, KMgH3, LiMgH3, NaBeH3, NaMgH3, and RbMgH3 as model systems we have analyzed the band structure of hydrides. It is shown that hydrides can possess features semiconductors n- and/or p-type electrical conductivity. We found carrier effective masses some are almost same those commonly known semiconductors. The present study suggests Mg impurities substituting Al form a shallow acceptor level in gap which provide holes cause From...
Abstract The photoresponsive structures prepared by magnetron sputtering of ZnO on p‐Si substrates followed vacuum evaporation semitransparent Ni film surface are investigated. obtained Ni/n‐ZnO/p‐Si show high sensitivity that sharply increases with increase in applied voltage. Under a bias voltage 5 V, the responsivities at λ = 390 nm and 850 were equal to 210 110 A/W, which correspond quantum efficiencies 655 165, respectively. It is assumed observed strong response attributed internal...
Initial stages of indium tin oxide (ITO) growth on a polished Si substrate upon magnetron sputtering were studied experimentally using in-situ x-ray photoelectron spectroscopy measurements. The presence pure and tin, as well bonded to oxygen at the ITO/Si interface observed. experimental observations compared with several atomistic models interfaces. A periodic model was constructed, giving detailed information about local environment interface. Molecular dynamics based density functional...
The formation of structural defects in hydrogen plasma treated (100)- and (111)-oriented p-type Czochralski (Cz) Si [100]-oriented n-type was studied by Raman spectroscopy, scanning electron microscopy transmission microscopy. samples were either a 110 MHz or 13.56 at 250°C for 60 min. distribution nuclear reaction analysis. It is found that, after the treatment, surface Cz structured roughness depends on orientation doping level substrate. defect density increases (100)-oriented wafers...
In plasma-hydrogenated p-type Czochralski silicon, rapid thermal donor (TD) formation is achieved, resulting from the catalytic support of hydrogen. The n-type counter doping by TD leads to a p-n junction formation. A simple method for indirect determination diffusivity hydrogen via applying spreading resistance probe measurements presented. Hydrogen diffusion in silicon during both plasma hydrogenation and post-hydrogenation annealing investigated. impact duration, temperature, resistivity...
This work presents ab initio study of strain-induced modulation band structure Si. It is shown that at straining pressures >12GPa, Si can be turned from indirect to direct. Both the bottommost conduction and topmost valence are located Γ point. The minimum point strained found much more dispersive than X unstressed Consequently, electrical conductivity through valley suggested superior Barrier height, which needed transfer electrons in X∕L points or have been calculated. results...
Al/ZnO:N/Al and Ni/ZnO:N/Al diode photodetectors fabricated by dc magnetron sputtering of ZnO:N films on p-Si substrates are studied.The photocurrent-to-dark current ratio equal to 250 at λ = 390 nm the time constant photoresponse about 10 µs for structures with 4 µm interdigital spacing was achieved.The structure has rectification ≈ 2 bias 1 V, maximal responsivity 0.1 A/W is observed 365 nm, measured 100 ns.
Hydrogenation of multicrystalline silicon for solar cell applications is considered to be an effective method increasing the lifetime by passivating defects and impurities. Hydrogen plasma treated as-cut chemically etched samples have been studied electron microscopy in order investigate hydrogen defect formation at extended bulk defects. In samples, texture surface after treatment differs between different grains depending on grain orientation. induced are formed sawing that extend up ∼5 μm...