A5055140994- Silicon Nanostructures and Photoluminescence
- Semiconductor materials and devices
- Ion-surface interactions and analysis
- Quantum Dots Synthesis And Properties
- ZnO doping and properties
- Thin-Film Transistor Technologies
- Chalcogenide Semiconductor Thin Films
- Nanowire Synthesis and Applications
- Ga2O3 and related materials
- Semiconductor materials and interfaces
- Advanced Semiconductor Detectors and Materials
- GaN-based semiconductor devices and materials
- Silicon and Solar Cell Technologies
- Semiconductor Quantum Structures and Devices
- Diamond and Carbon-based Materials Research
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced Memory and Neural Computing
- CCD and CMOS Imaging Sensors
- Polymer Nanocomposite Synthesis and Irradiation
- Metal and Thin Film Mechanics
- Neuroscience and Neural Engineering
- Gas Sensing Nanomaterials and Sensors
- Perovskite Materials and Applications
- Luminescence Properties of Advanced Materials
- Carbon Nanotubes in Composites
Belarusian State University
2016-2025
Realizing energy-efficient devices with sustainable and independent operation is a large challenge for next-generation photodetection systems in various environments. In this study, we present high-response fast-speed ultraviolet photodetector (UV PD) based on the p-AlGaN/AlN/n-GaN nanowires (NWs) heterojunction, which could operate at 0 V bias underwater through photoelectrochemical (PEC) process. Compared to UV PD without AlN insertion, detection performance would be increased 3–5 times...
The electrophysical properties and the resistive switching effect of Ni/SiN x /p + Si/Ni memristor structure are investigated. Silicon nitride films with a thickness ~40–60 nm were deposited in inductively coupled plasma from SiH 4 – N 2 –Ar mixture at [SiH ]/[N ] ratios 2.19 2.55, which ensured formation SiN an excess Si compared to stoichiometry. To investigate thermal annealing on , one wafers film was annealed using rapid (RTA, 1200 °C, 3 minutes Ar). observed when applying voltage −4...
Abstract Research on optoelectronic synapses that can integrate both detection and processing functions is essential for the development of efficient neuromorphic computing. Here, we experimentally demonstrated an Ga 2 O 3 ‐based metal–semiconductor–metal (MSM) solar‐blind ultraviolet (UV) photodetector (PD) with asymmetric interdigital electrodes. The PD exhibits a responsivity 732 A/W under forward bias 6 V. tunable conductance properties PDs provide novel approach to synaptic performance....
In this work, we investigate the ability of a newly fabricated metal–semiconductor–metal (MSM) solar-blind ultraviolet (UV) photodetector (PD). Three Al <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\textit{X}}$</tex-math> </inline-formula> Ga notation="LaTeX">$_{\text{1}-\textit{X}}$</tex-math> N films with different content were used to form heterostructures, and metal stacks deposited on their two...
Abstract Zinc blende ZnO nanocrystals (NCs) were synthesised in amorphous silica by high-fluence dual (Zn, O) ion implantation and subsequent thermal annealing air. We observed the formation of core/shell nanoparticles at depth maximum Zn concentration as a result an incomplete oxidation process. The matrix with NCs exhibits intense white-greenish emission. Low-temperature photoluminescence spectroscopy revealed various radiative recombination mechanisms zinc involving intrinsic defects that...
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Photoluminescence and electron paramagnetic resonance of LPCVD silicon nitride films implanted with nitrogen ions annealed at 800 1200 °C were studied. It was shown for the initial film that rapid thermal annealing 3 min leads to a decrease in luminescence signal, while an increase intensity blue-green region. Implantation complete quenching which is most likely due radiation damage. However, preliminary implantation fluence 1 × 1016 cm−2 followed by enhances confirms contribution amorphous...
Selenium supersaturated silicon is a promising material for intermediate-band solar cells and extended infrared photodiodes.Selenium-rich Si layers were fabricated by Se ion implantation followed pulsed laser melting using one or three pulses.The Rutherford backscattering spectrometry in random channeling directions, the Raman spectroscopy, photoluminescence techniques used to study structural optical properties of Se-rich layers.It shown that irradiation leads recrystallization significant...
A method for dispersing multi-walled carbon nanotubes in a SpeciFix-20 two-component polymer (epoxy resin + hardener) using joint hydromechanical and ultrasonic agitation was developed.New composite materials with were produced.Studies on structural, optical (Raman spectra) electrical characteristics, as well processes of passage electromagnetic microwave radiation (26 -38 GHz) through experimental samples conducted.It shown that strong absorption properties the are manifested only...