A5022835555- Ga2O3 and related materials
- GaN-based semiconductor devices and materials
- Quantum and electron transport phenomena
- Physics of Superconductivity and Magnetism
- ZnO doping and properties
- Advanced Photocatalysis Techniques
- 2D Materials and Applications
- Surface and Thin Film Phenomena
- Molecular Junctions and Nanostructures
- MXene and MAX Phase Materials
- Diamond and Carbon-based Materials Research
- Photonic Crystals and Applications
- X-ray Diffraction in Crystallography
- Electronic and Structural Properties of Oxides
- Complementary and Alternative Medicine Studies
- Perovskite Materials and Applications
- Semiconductor Quantum Structures and Devices
- Advancements in Semiconductor Devices and Circuit Design
- Crystallization and Solubility Studies
- Gas Sensing Nanomaterials and Sensors
- Plasmonic and Surface Plasmon Research
- Superconductivity in MgB2 and Alloys
- Semiconductor materials and devices
- Thermal Radiation and Cooling Technologies
- Lubricants and Their Additives
Nanjing University
2019-2025
Tongji University
2024
Brunel University of London
2023
Wuhan Institute of Technology
2022
Shanghai Jiao Tong University
1993-2021
Ruijin Hospital
2021
Collaborative Innovation Center of Advanced Microstructures
2021
Nanjing University of Posts and Telecommunications
2021
Southwest Petroleum University
2018-2020
State Key Laboratory of Oil and Gas Reservoir Geology and Exploitation
2020
Realizing energy-efficient devices with sustainable and independent operation is a large challenge for next-generation photodetection systems in various environments. In this study, we present high-response fast-speed ultraviolet photodetector (UV PD) based on the p-AlGaN/AlN/n-GaN nanowires (NWs) heterojunction, which could operate at 0 V bias underwater through photoelectrochemical (PEC) process. Compared to UV PD without AlN insertion, detection performance would be increased 3–5 times...
Eutectic alloys were fabricated from the quaternary Al-Cu-Si-Ni system via arc melting and suction casting. An invariant ternary eutectic reaction (α-Al+Si+θ-Al2(CuNi)) was found in alloy with a composition of Al67.2Cu24Si8Ni0.8 (wt%). The dissolution Ni (∼1.7 at%) into tetragonal θ-Al2Cu takes place during this reaction. Density functional theory (DFT) calculations show that configurational entropy stabilises level randomly substituted Cu sites lattice at high temperatures. as-solidified...
The ideal combination of high sensitivity and fast response speed is crucial for advanced photodetectors. Herein, we present a normally-off, visible-blind ultraviolet (UV) AlGaN/GaN phototransistor featuring fluorine-ion-implanted trench gate structure. This design effectively disrupts the conductive channel heterostructure, drastically reducing dark current to magnitude 0.1 pA. structure enhances localized electric field in confined region, significantly improving UV detection sensitivity....
Photocatalytic waste hydrogen sulfide (H 2 S) conversion into clean energy ) has an alluring prospect. Herein, a series of novel Cd x In 1‐x S solid solutions are constructed by mild hydrothermal method for visible light photocatalytic H splitting. The with orderly tuned visible‐light response range from 550 to 600 nm present more positive valence band (VB) position and remarkable separation ability charge carriers. As result, the optimized cubic solution casts extraordinary evolution rate...
We systematically study the device characteristics of monolayer (ML) blue phosphorene metal–oxide semiconductor field-effect transistors (MOSFETs) by using ab initio quantum-transport simulations. The ML MOSFETs show superior performances with ultrashort-channel length. first predict ultrascaled proper doping concentration and underlap structures are compliant high-performance (HP) low-power (LP) requirements International Technology Roadmap for Semiconductors in next decade aspects on-state...
We predict spontaneous polarization of ε-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> can achieve a high density 1014 cm <sup xmlns:xlink="http://www.w3.org/1999/xlink">-2</sup> two-dimensional electron gas (2DEG) at the interface and m-AlN (m-GaN) without doping. Based on accurately calculated bandgap alignment , AlN GaN, we find that critical thickness ε-Ga2O3 to form mobile...
Ultraviolet photodetectors have aroused wide concern based on wide-band-gap semiconductors, such as GaN and Ga2O3. Exploiting multi-spectral detection provides unparalleled driving force direction for high-precision ultraviolet detection. Here we demonstrate an optimized design strategy of Ga2O3/GaN heterostructure bi-color photodetector, which presents extremely high responsivity UV-to-visible rejection ratio. The electric field distribution optical absorption region was profitably modified...
Normally off AlGaN/GaN high electron mobility transistors with a p-type gate are promising for power switching applications, advantages of low energy consumption and safe operation. In this work, p-NiO is employed as stack, the interfacial reconstruction band structure modification at p-NiO/AlGaN interface have been demonstrated to manipulate channel transport by post-annealing. addition achieving positive threshold voltage 0.6 V large saturation output current 520 mA/mm, we found that...
In this paper, we proposed a back-illuminated metal-semiconductor-metal AlGaN heterostructure solar-blind ultraviolet (UV) photodetector integrated with SiO2/Si3N4 one-dimensional photonic crystal (1D PC). The light absorption outside caused by impurity and defect energy levels is significantly suppressed the 1D PC. fabricated device exhibits extremely low dark current of 2 pA at 20 V applied voltage, where light/dark ratio exceeds 4000. Meanwhile, demonstrates manifest narrow-band detection...
As a burgeoning wide-band gap semiconductor material, AlxGa1-xN alloy has attracted great attention for versatile applications due to its superior properties. However, poor crystalline quality restricted the employment of AlGaN on electronic devices long time. Herein, we proposed nanopillar/superlattice hierarchical structure epitaxy boost quality. The scale-controllable AlN nanopillar template is fabricated from nickel self-assembly process. initiates epitaxial laterally overgrowth mode...
Abstract The surface modification of titanium and its alloys with amino group plasma‐enhanced chemical vapor deposition has been proven to enhance the performance implants on initial osteoblast bioactivity in vitro. However, scarce information effect this kind nerve regeneration exists. In study, chemistry pure Ti disks surface‐modified was examined using X‐ray photoelectron spectroscopy. Cell counting kit 8 assay, 4,6‐diamidino‐2‐phenylindole staining, flow cytometry, scanning electron...
Abstract High‐sensitivity photodetection capability has become an indispensable requirement for detecting feeble solar‐blind ultraviolet (UV) light. Micro‐nano metallic metasurface structures are employed to enhance the detector photoelectric performances. However, existing approaches confronted with bottlenecks of structure simplification and efficacy mediocrity. Here, a distinctive diamond UV photodetector synthetic multistage‐concentric‐annulus (MCA) architecture is reported, which...
Amplification of weak ultraviolet signals has always been a challenging issue to design and fabricate high-performance photodetectors. Here, we observe distinctive microplasma breakdown behavior in AlGaN-based avalanche photodiodes with artificial mesa architecture. At 107 V voltage, the photocurrent increases sharply whereas dark current intriguingly remains at extremely low level 0.1 nA as applied voltage increases. Simultaneously, significant blue luminescence phenomenon is observed edge...
We propose a novel analog/digital (A/D) converter based on single-electron transistors (SETs) in this paper. In the proposed A/D converter, core cell is SET module, composed of capacitive dividers and SET-based universal literal gates. The gate similar to well-known Tucker's inverter (J.R. Tucker, J. Appl. Phys., vol. 72, no. 9, pp. 4399-4413, 1992), but here it acts as digital conversion inputs upper-SET lower-SET are two opposite voltages. gate, by adjusting some parameters, output having...
We designed and fabricated narrow-band UV-B AlGaN p-i-n photodiodes (PDs) with a full-width at half-maximum (FWHM) of 8 nm by optimizing the Al composition thickness layers. To improve photoelectric response PDs, polarization electric field same direction applied bias was introduced to absorption layer adjusting ratio between p-type i-type layer. The enhanced PD exhibited higher external quantum efficiency (EQE) 82% than conventional one an EQE 67%. Meanwhile, low dark current density 1.7...
We propose the principle of a three-dimensional (3D) nanoelectron system for bistable or four-stable states based on metallic nanodot arrays and HTSC–N–HTSC (HTSC–SNS) junctions, where HTSC denotes high-temperature superconductor N is normal conductor. consider possibility implementing operations basis 3D through charge interactions between nanodots surface HTSC–SNS junctions. present simple classical circuit model without considering single-electron effects nanodots, junctions are described...
With the development of spintronics, search for heterostructures with Curie temperatures higher than room temperature has become a top priority all researchers. We calculated electronic and magnetic properties constructed by VN ferromagnetic half-metallic Ga2O2 nonmagnetic semiconducting using first-principles calculations. Our results show that VN/Ga2O2 heterostructure not only well above but also 100% spin filtering effect. In addition, ability to maintain perpendicular anisotropy (PMA) at...
Abstract Highly sensitive avalanche photodetector (APD) has become a promising candidate for detecting extremely weak target signals. However, the impact ionization multiplication simultaneously triggered by electrons and holes will lead to large excess noise, thus significantly influencing device performance. Herein, we propose distinctive AlGaN-based ultraviolet photodiode with AlN/Al 0.2 Ga 0.8 N periodically stacked region. The higher effective masses density of states in valence band...
We successfully fabricated a high-performance <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\varepsilon $</tex-math> </inline-formula> -Ga notation="LaTeX">$_{\text{2}}$</tex-math> O notation="LaTeX">$_{\text{3}}$</tex-math> solar-blind photodetector employing an interdigital structure. The device exhibits prominent response peak at 240 nm with cutoff edge located 266 nm. Notably, the ultraviolet (UV)...