A5020703818- Ga2O3 and related materials
- GaN-based semiconductor devices and materials
- ZnO doping and properties
- Photocathodes and Microchannel Plates
- Semiconductor Quantum Structures and Devices
- Advanced Thermoelectric Materials and Devices
- Semiconductor materials and devices
- Advanced Photocatalysis Techniques
- Thin-Film Transistor Technologies
- Nanowire Synthesis and Applications
- Advanced Optical Sensing Technologies
- Copper-based nanomaterials and applications
- Oral and gingival health research
- Silicon Nanostructures and Photoluminescence
- CCD and CMOS Imaging Sensors
- Metamaterials and Metasurfaces Applications
- Advanced Semiconductor Detectors and Materials
- Perovskite Materials and Applications
- Advanced battery technologies research
- Photonic Crystals and Applications
- Thermal Radiation and Cooling Technologies
- Advancements in Semiconductor Devices and Circuit Design
- Electronic and Structural Properties of Oxides
- Oral microbiology and periodontitis research
- Semiconductor Lasers and Optical Devices
Nanjing University
2017-2025
ShenZhen People’s Hospital
2024
Collaborative Innovation Center of Advanced Microstructures
2017-2021
Nanjing University of Posts and Telecommunications
2020
Jiangnan University
2020
East China Normal University
2011-2012
The incorporation of thermal dynamics alongside conventional optoelectronic principles holds immense promise for advancing technology. Here, we introduce a GaON/GaN heterostructure-nanowire ultraviolet electrochemical cell observing photothermoelectric bipolar impulse characteristic. By leveraging the distinct thermoelectric properties GaON/GaN, rapid generation hot carriers establishes bidirectional instantaneous gradients in concentration and temperature within nanoscale heterostructure...
Screw dislocations are generally considered to be one of the main causes GaN-based device leakage, but so far, nearly no reports have focused on effects open-core screw leakage currents experimentally. In this paper, we use a conductive atomic force microscope characterize electronic properties threading (TDs) in GaN layer. The full-core and mixed found provide paths for currents. terms contribution currents, edge smaller than dislocations. We isotropic linear elasticity theory density...
We report high-performance visible-blind ultraviolet (UV) phototransistors (PTs) based on an enhanced HEMT structure. In dark conditions, the conduction channel was depleted, and current density suppressed to 2.63 × 10–10 mA/mm. Under 345 nm UV illumination, depletion region shrinks, two-dimensional electron gas (2DEG) recovers. A high photocurrent of 37.39 mA/mm, a peak responsivity 6.80 104 A/W, large photo-to-dark-current ratio (PDCR) 1.42 1011, superior UV-to-visible rejection (UVRR)...
The ideal combination of high sensitivity and fast response speed is crucial for advanced photodetectors. Herein, we present a normally-off, visible-blind ultraviolet (UV) AlGaN/GaN phototransistor featuring fluorine-ion-implanted trench gate structure. This design effectively disrupts the conductive channel heterostructure, drastically reducing dark current to magnitude 0.1 pA. structure enhances localized electric field in confined region, significantly improving UV detection sensitivity....
Objectives This study aimed to evaluate the mediating effect of systemic condition on relationship between tooth loss and mortality risk. Materials methods A 9-y follow-up prospective longitudinal was conducted based China Health Retirement Longitudinal Study (CHARLS). The participants aged >45 y at baseline were followed up from 2011 2020. Cox proportional hazards models utilized assess both all-cause with hazard ratios (HRs) 95% confidence intervals (CIs) reported adjusted possible...
Abstract High‐sensitivity, low‐power ultraviolet (UV) detection remains a major challenge in optoelectronics, with complex physical mechanisms requiring exploration as devices transition from thin‐film to low‐dimensional structures. Herein, high‐performance AlGaN p‐i‐n photodetector featuring vertical nanocolumn‐array architecture is presented. The device demonstrates an exceptional external quantum efficiency of 1090% and high responsivity 3 A W −1 at 0 V, significantly showcasing...
A heterostructure multiplication region consisting of high/low-Al-content AlGaN layers instead the conventional high-Al-content homogeneous layer was proposed to increase average hole ionization coefficient and realize a higher gain in avalanche photodiodes (APDs) based on separate absorption structures. The fabricated APDs with Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.2</sub> Ga xmlns:xlink="http://www.w3.org/1999/xlink">0.8</sub>...
Ultraviolet photodetectors have aroused wide concern based on wide-band-gap semiconductors, such as GaN and Ga2O3. Exploiting multi-spectral detection provides unparalleled driving force direction for high-precision ultraviolet detection. Here we demonstrate an optimized design strategy of Ga2O3/GaN heterostructure bi-color photodetector, which presents extremely high responsivity UV-to-visible rejection ratio. The electric field distribution optical absorption region was profitably modified...
Thermoelectric (TE) materials transform thermal energy into electricity, which can play an important role for global sustainability. Conducting polymers are suitable the preparation of flexible TE because their low-cost, lightweight, flexible, and easily synthesized properties. Here, we fabricate organic-inorganic hybrids by combining vanadium oxynitride nanoparticles coated with nitrogen-doped carbon (NC@VNO) poly(3,4-ethylenedioxy thiophene):poly(styrene sulfonate) (PEDOT:PSS). We find...
As a burgeoning wide-band gap semiconductor material, AlxGa1-xN alloy has attracted great attention for versatile applications due to its superior properties. However, poor crystalline quality restricted the employment of AlGaN on electronic devices long time. Herein, we proposed nanopillar/superlattice hierarchical structure epitaxy boost quality. The scale-controllable AlN nanopillar template is fabricated from nickel self-assembly process. initiates epitaxial laterally overgrowth mode...
We report high-performance Al0.1Ga0.9N p-i-n ultraviolet (UV) avalanche photodiodes (APDs) based on sapphire substrates with the employment of negative bevel edge terminations. An ultra-low slope angle 2° was achieved through optimization photoresist reflow and inductively coupled plasma (ICP) etching processes. The devices present stable breakdown voltages ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math...
To enhance avalanche ionization, we designed a new separate absorption and multiplication AlGaN solar-blind photodiode (APD) by replacing the conventional homogeneous region with high/low Al content heterostructure layer. The calculated results showed that improved APD <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.3</sub> Ga xmlns:xlink="http://www.w3.org/1999/xlink">0.7</sub> N/Al xmlns:xlink="http://www.w3.org/1999/xlink">0.45</sub>...
We designed and fabricated narrow-band UV-B AlGaN p-i-n photodiodes (PDs) with a full-width at half-maximum (FWHM) of 8 nm by optimizing the Al composition thickness layers. To improve photoelectric response PDs, polarization electric field same direction applied bias was introduced to absorption layer adjusting ratio between p-type i-type layer. The enhanced PD exhibited higher external quantum efficiency (EQE) 82% than conventional one an EQE 67%. Meanwhile, low dark current density 1.7...
We report Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.1</sub> Ga xmlns:xlink="http://www.w3.org/1999/xlink">0.9</sub> N p-i-n ultraviolet (UV) avalanche photodiodes (APDs) based on sapphire substrates with a record-high gain over <inline-formula xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$2 \times 10^{6}$ </tex-math></inline-formula> . The devices fabricated various mesa diameters present consistent behaviors...
Abstract High‐sensitivity photodetection capability has become an indispensable requirement for detecting feeble solar‐blind ultraviolet (UV) light. Micro‐nano metallic metasurface structures are employed to enhance the detector photoelectric performances. However, existing approaches confronted with bottlenecks of structure simplification and efficacy mediocrity. Here, a distinctive diamond UV photodetector synthetic multistage‐concentric‐annulus (MCA) architecture is reported, which...
Amplification of weak ultraviolet signals has always been a challenging issue to design and fabricate high-performance photodetectors. Here, we observe distinctive microplasma breakdown behavior in AlGaN-based avalanche photodiodes with artificial mesa architecture. At 107 V voltage, the photocurrent increases sharply whereas dark current intriguingly remains at extremely low level 0.1 nA as applied voltage increases. Simultaneously, significant blue luminescence phenomenon is observed edge...
We report high-performance Al0.1Ga0.9N p-i-n ultraviolet (UV) avalanche photodiodes (APDs) based on sapphire substrates with stable breakdown voltages (VBR) around 113.4 V, low dark current densities (JBR) below 9 × 10-4 A/cm2 and a high gain over 2 106. A two-step deposition method was employed to reduce passivation-induced plasma damage while maintaining dielectric film quality. Consistent JBR for various mesa sizes at the VBR are demonstrated, which reveals suppression of surface leakage...
AlGaN heterostructure solar-blind avalanche photodiodes (APDs) were fabricated on a double-polished AlN/sapphire template based separate absorption and multiplication (SAM) back-illuminated configuration. By employing heterostructures with different Al compositions across the entire device, SAM APD achieved an gain of over 1×105 at operated reverse bias 92 V low dark current 0.5 nA onset point breakdown. These excellent performances attributed to acceleration holes by polarization electric...
To improve the solar-blind/visible-blind photocurrent response rejection ratio of solar-blind photodetectors, we designed and fabricated a high-performance SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /SiN xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> 1-D photonic crystal (PC) ultraviolet (UV) filter on (0 0 1) double-polished sapphire substrate. When depositing SiN , found that employing NH3 as nitrogen precursor instead N2...
In this letter, novel heterostructure p-i-n GaN avalanche photodiodes (APDs) with p-type <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.05</sub> Ga xmlns:xlink="http://www.w3.org/1999/xlink">0.95</sub> N layer are proposed and analyzed through Silvaco Atlas simulations. The introduction of the generates a negative polarization charge at p-In N/i-GaN heterojunction interface via piezoelectric effect. Three times higher hole concentration in is...