A5056659791- Semiconductor materials and interfaces
- Surface and Thin Film Phenomena
- Silicon Nanostructures and Photoluminescence
- Chalcogenide Semiconductor Thin Films
- Advanced Materials Characterization Techniques
- Semiconductor materials and devices
- Intermetallics and Advanced Alloy Properties
- Nanowire Synthesis and Applications
- Superconductivity in MgB2 and Alloys
- Silicon and Solar Cell Technologies
- Thin-Film Transistor Technologies
- Semiconductor Quantum Structures and Devices
- Ion-surface interactions and analysis
- Advanced Thermoelectric Materials and Devices
- Advanced Semiconductor Detectors and Materials
- MXene and MAX Phase Materials
- Metal and Thin Film Mechanics
- Heusler alloys: electronic and magnetic properties
- Luminescence Properties of Advanced Materials
- Electronic and Structural Properties of Oxides
- Magnetic properties of thin films
- Integrated Circuits and Semiconductor Failure Analysis
- Surface Roughness and Optical Measurements
- Aerogels and thermal insulation
- Electron and X-Ray Spectroscopy Techniques
Institute of Automation and Control Processes
2016-2025
Russian Academy of Sciences
2014-2025
Far Eastern Branch of the Russian Academy of Sciences
2013-2024
Belarusian State University of Informatics and Radioelectronics
2022
Far Eastern State Transport University
2021
Amur State University
2019
Far Eastern Federal University
2001-2018
National University of Science and Technology
2015
Institute of Chemistry, Far Eastern Branch of the Russian Academy of Sciences
2010
CSIR National Physical Laboratory of India
2007
Under ultra-high vacuum conditions, thick polycrystalline Mg2Si films with thicknesses of 496 and 692 nm were grown on Si (111) substrates by the layer-by-layer co-deposition pairs Mg layers at a temperature 250 °C pre-formed amorphous buffer layer. The formation crystalline was confirmed Raman spectroscopy data. absorption coefficient spectrum calculated from transmission reflection spectra obtained optical spectroscopy, which made it possible to determine width indirect band gap in...
By using solid phase epitaxy of thin Fe films and molecular beam Si, a p(+)-Si/p-Si/β-FeSi2 nanocrystallites/n-Si(111) diode structure was fabricated. Transmission electron microscopy data confirmed well-defined multilayered with embedded nanocrystallites two typical sizes: 3-4 15-20 nm, almost coherent the Si matrix. The at zero bias conditions exhibited current responsivity 1.7 mA/W, an external quantum efficiency about 0.2%, specific detectivity 1.2 × 10(9) cm Hz(1/2)/W wavelength 1300 nm...
Abstract Optimization of growth parameters has permitted to create monolithic nanocomposites with buried nanocrystallites (NCs) iron and chromium disilicides, polycrystalline Mg 2 Si NCs epitaxial MnSi 1.74 nanoislands on Si(111) substrate. Grown quasi‐zero dimensional heterostructures multilayers β‐FeSi atop silicon p‐n junction have demonstrated the range expansion photoelectrical sensitivity up 1.8 µm strong room temperature electroluminescence at 1.2 – 1.6 µm. A new approach selective...
The electronic structure and morphology of calcium silicide films formed by reactive deposition epitaxy at 130 oC on Mg2Si film 500 Si(111)7x7 surface, their optical electrical properties have been investigated. Formation new phase with high Si concentration, indirect band gap (0.63 eV), conductivity low temperatures (50-450 K) has obtained after surface.
This article describes the development of an Si-based light-emitting diode with β-FeSi2 nanocrystals embedded in active layer. Favorable epitaxial conditions allow us to obtain a direct band gap type-I alignment Si/β-FeSi2 nanocrystals/Si heterostructure optical transition at wavelength range 1500–1550 nm room temperature. Transmission electron microscopy data reveal strained, defect-free diameter 6 and 25 Si matrix. Intense electroluminescence was observed pumping current density as low 0.7...
Mg2Si thin film was embedded in amorphous silicon matrix by solid phase epitaxy. The structure and optical properties were investigated electron energy loss, X-ray photoelectron, Raman, photo thermal deflection spectroscopy measurements. It found that the photon range of 0.8–1.7 eV, light absorption with magnesium silicide (Mg2Si) a-Si(i) is 1.5 times higher than for same without Mg2Si.
The purpose of this work was to comparatively analyze the structural, optical and electrical properties calcium silicides (CaSi, CaSi2) on silicon in form epitaxial nanocrystalline films grown Si(001) Si(111) substrates determine field use. An analysis structure showed presence contributions from amorphous, crystalline phases (Ca2Si, CaSi with an increase Si substrate temperature 190 °C 500 °C. It has been established that transparency photon energy range 0.2–1.3 eV CaSi2 is associated a low...
The magnetotransport and magnetic properties of UT thin CrSi films are investigated. exhibit quantum magnetoresistance (3–30 K) out-of-plane ferromagnetism (FM), 3D conductivity weak FM.
Single phase M 2 Si ( = Mg , Ca Sr ) silicides were grown using substrates, by thermal treatment of the substrates in vapors metallic sources, and electronic structures optical property investigated. The band calculated first-principles total-energy calculation program pseudopotential schemes with plane-wave basis functions. reflectance spectra also deduced from theoretical structures, roughly agreed experimental results except for low intensity around eV. This suggests that energy gap agree...
The growth, structure, optical, electrical and thermoelectric properties of calcium silicides various compositions on silicon substrates with (100) (111) orientations were experimentally studied. It was found that when the atoms Ca Si are co-deposited atomically clean silicon, basis phases in composition formed films depends substrate temperature annealing temperature: 2 (T = 20°C, T ann 330°C), CaSi 190-320°C, 330°C) 500°C). established phase is a direct-gap semiconductor band gap 0.82±0.02...
Abstract In this paper we introduce three technological ways how to increase an absorption coefficient of hydrogenated silicon/Si:H/ thin films and diode structures on the base Si:H. The first one is reactive deposition epitaxy (RDE), which permit form silicide nanoparticles different elements /Fe, Cr, Ca, Mg/ with semiconducting properties convenient band gap. Two more simple techniques have been also tested for creation magnesium (Mg 2 Si‐NPs): a laser ablation (RLA) combination Mg vacuum...
The technology of solid phase growth multilayer structures with buried nanosize magnesium silicide clusters has been developed. Basing on the experimental data, a conclusion was made that remain in depth Si layers at 650°C and give contribution effective dielectric permeability electron number structures. huge increase thermoelectric power coefficient for samples comparing one bare p-type silicon substrate observed. [DOI: 10.1380/ejssnt.2005.12]