A5031343313- GaN-based semiconductor devices and materials
- Ga2O3 and related materials
- ZnO doping and properties
- Metal and Thin Film Mechanics
- Semiconductor materials and devices
- Acoustic Wave Resonator Technologies
- Semiconductor Quantum Structures and Devices
- Thermochemical Biomass Conversion Processes
- Catalysts for Methane Reforming
- Iron and Steelmaking Processes
- Carbon and Quantum Dots Applications
- Catalysis and Hydrodesulfurization Studies
- Photocathodes and Microchannel Plates
- Adsorption and biosorption for pollutant removal
- Subcritical and Supercritical Water Processes
- Catalysis for Biomass Conversion
- Electromagnetic wave absorption materials
- Nanocluster Synthesis and Applications
- Graphene research and applications
- Electrocatalysts for Energy Conversion
- Supercapacitor Materials and Fabrication
- Catalytic Processes in Materials Science
- Petroleum Processing and Analysis
- Copper Interconnects and Reliability
- Biofuel production and bioconversion
Nanjing Tech University
2020-2022
South China University of Technology
2013-2017
Guangzhou Experimental Station
2014
AlN (0001) epitaxial films have been grown on Al (111) substrates with an in-plane relationship of AlN[110]//Al[10] by pulsed laser deposition. The as-grown at 450 °C exhibited a very smooth and flat surface root-mean-square roughness less than 1.1 nm. There is no interfacial layer existing between substrates, indicating abrupt interface. ~302 nm thick are almost fully relaxed only compressive strain 0.16%. With the increase in growth temperature, thickness increases, resulting degradation...
High-quality nonpolar <italic>m</italic>-plane GaN-based light-emitting diode (LED) wafers have been deposited on LiGaO<sub>2</sub>(100) substrates by a combination of pulsed laser deposition and molecular beam epitaxy technologies.
Highly-efficient GaN-based LEDs on Si(111) substrates were achieved using MOCVD with a suitable reactor pressure for the GaN nucleation layer growth.
Homogeneous and high-quality GaN films with a RMS thickness inhomogeneity of less than 2.8% were grown on an AlN buffer layer using pulsed laser deposition optimized rastering program.
High-quality crack-free GaN epitaxial films have been grown on Si substrates by metal organic chemical vapor deposition (MOCVD) using a two-step growth of AlN buffer layer. The layer is first at V/III ratio 2000 to obtain 3 dimensional (3D) mode, and then the decreased 800 accelerate coalescence grains. In comparison single-step fixed 800, surface morphology preferably coalesced crystalline quality significantly improved via growth. Furthermore, it demonstrated that improvement driven method...
High-quality nonpolar m-plane InGaN/GaN multiple quantum wells (MQWs) have been deposited on LiGaO2(100) substrates by the combination of pulsed laser deposition (PLD) and molecular beam epitaxy (MBE) technologies. This work opens up a new prospect for achieving high-efficiency GaN-based devices.
High-quality GaN-based light-emitting diode (LED) wafers have been grown on Si substrates by metal–organic chemical vapor deposition designing epitaxial structures with AlN/Al<sub>0.24</sub>Ga<sub>0.76</sub>N buffer layers and a three-dimensional (3D) GaN layer.
We have achieved high-performance blue GaN-based light-emitting diodes (LEDs) by energy band modification on an AlxInyGa1-x-yN electron blocking layer (EBL). It is demonstrated simulation that the strategy using high In/Al ratio to decrease polarization charge density and alleviate negative effect from electric fields more favorable. Using optimal of 0.5, LED with Al0.40In0.20Ga0.40N EBL shows a comprehensive performance improvement. With comparison conventional Al0.15GaN0.85N EBL, such owns...
High-quality GaN films have been grown on nitrided LiGaO<sub>2</sub> substrates by pulsed laser deposition. The effect of nitridation the properties and growth mechanism deposition also systemically studied.
High-quality GaN films with sharp and abrupt interfaces have been achieved on nitrided α-Al<sub>2</sub>O<sub>3</sub> substrates by pulsed laser deposition. The effect of nitridation the properties growth mechanism carefully studied.
Highly-efficient GaN-based light-emitting diode (LED) wafers have been grown on La0.3Sr1.7AlTaO6 (LSAT) substrates by radio-frequency molecular beam epitaxy (RF-MBE) with optimized growth conditions. The structural properties, surface morphologies and optoelectronic properties of as-prepared LED LSAT characterized in detail. characterizations revealed that the full-width at half-maximums (FWHMs) for X-ray rocking curves GaN(0002) GaN(10-12) are 190.1 210.2 arcsec, respectively, indicating...