Silicon heterojunction (SHJ) solar cell device structures use carrier-selective contacts that enable efficient collection of majority carriers while impeding the minority carriers. However, these can also be a source resistive losses degrade performance cell. In this article, we evaluate hole contact- hydrogenated amorphous silicon (a-Si:H)(i)/a-Si:H(p)/indium tin oxide (ITO)/Ag-by simulating transport in SHJ transfer length method structures. We study contact resistivity behavior by varying...

The photogenerated carriers in a-Si/c-Si HIT cells must traverse the intrinsic amorphous silicon barrier order to be collected. As this region is nature, it contains many defect states, and thus carrier transport mainly described by assisted transport. present work applies Kinetic Monte Carlo (KMC) method for analyzing interactions between discrete defects carriers. We explore `hopping' nature of via considering effect phonons. addition phonons allows us study non-iso-energetic transitions...

The transport behavior of photogenerated minority carriers in an a-Si/c-Si heterojunction solar cell is dependent on the energy distribution function (EDF) impinging hetero-interface. high field region at interface results a strongly non-Maxwellian holes incident surface, which has implications for current collection and significant impact overall efficiency device. This work studies effect hetero-interface through combination Monte Carlo simulations analysis defect assisted transport. A...

Silicon heterojunction solar cells are a promising device architecture due to their high efficiencies, yet these tend suffer from series resistances. Until recently, little has been done understand the main factors contributing resistance. Here we begin systematic analysis determine important interactions between different layers in hole-collecting contact consisting of stack a-Si:H(i)/aSi:H(p)/ITO/Ag. We attempt address how performs when intrinsic amorphous silicon (a-Si:H(i)) layer...

Abstract The device performance of an amorphous silicon (a‐Si)/crystalline (c‐Si) solar cell depends strongly on the interfacial transport properties device. energy photogenerated carriers at barrier strength inversion heterointerface and their collection requires interaction with defects present in intrinsic buffer layer. In this work we a theoretical model to study defect assisted through barrier. We implement kinetic Monte Carlo (KMC) method which allows us simulate discrete defects. This...

Abstract High‐performance silicon heterojunction (SHJ) solar cells use carrier‐selective contact structures based on hydrogentated amorphous Si (a‐Si:H) to maximize collection of photogenerated carriers. The high open circuit voltages observed experimentally in SHJ require that the contacts provide selectivity and passivation. However, a microscopic understanding dynamics carrier transport through a‐Si layer is currently lacking. In this paper, we explicitly simulate holes across a‐Si:H( i )...

Most modern silicon heterojunction solar cells use electron/hole-selective contacts in order to efficiently collect photogenerated carriers. Carrier-selective are important as they block minority carriers and optimize the collection of majority However, these contact stacks contribute resistive loss cell which is detrimental overall device performance. In this paper we analyze origin losses a hole-collecting stack consists aSi:H(i)/a-Si:H(p)/ITO(n <sup...

Single junction solar cells based on Silicon continue to be relevant and commercially successful in the market due their high efficiencies relatively low cost processing. Heterojunction crystalline (c-Si) amorphous (a-Si) silicon (HIT Cells) have paved way for devices with VOC's (&amp;gt;700 mV) (&amp;gt;20%) [1]. Panasonic currently holds world record efficiency of 25.6% its trademark a-Si/c-Si HIT cell [2]. The novel structure device precludes usage traditional methods (such as drift...

In recent years, silicon photovoltaic technologies utilizing amorphous (a-Si) to form heterojunction solar cells with thin intrinsic (HIT) passivating layers have consistently demonstrated high efficiencies (>20%) including a world record efficiency of 25.6%, fill factor's and open circuit voltages (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OC</sub> > 700 mV). Further improvements in require rigorous approach better understand improve...

The tool OPTODET has been developed to investigate and explain the device characteristics of p <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> -n HgCdTe Photodetector at low temperatures. In this paper performance narrow band gap Hg <sub xmlns:xlink="http://www.w3.org/1999/xlink">1-x</sub> Cd xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> Te (x=0.225) 78 K wide (x=0.3) 250 have analyzed. Our theoretical model considers complete...

This paper studies the potential of wide bandgap tunnel junctions such as AlGaAs/GaAs and GaAs/GaAs configurations for multi - junction solar cells. Simulations were performed to study dominant physical mechanisms in band tunneling trap assisted tunneling. 1-D Drift Diffusion simulations determine different regions I-V characteristics, namely, current, excess current classical diffusion current. We outline implementation local non-local models understand nature peak The variation voltage is...

The constant innovation of devices in the semiconductor industry to improve performance meet very specific demands has led study and exploration a host new materials. use ternary quaternary materials, organic amorphous silicon are few examples promising alternatives traditional crystalline silicon. However, novel materials presents unique challenge for theoretical analysis using device simulation. Traditional simulation methods sometimes not enough capture nuances transport. In this paper we...

We simulate a type III InAs/GaSb broken gap junction to evaluate its potential as tunnel junction. The unique properties of will enhance current transport between the subcells multijunction solar cell and reduce overall series resistance. A drift diffusion simulator has been developed study characteristics novel heterostructures. effect all major recombination mechanisms such Shockley - Read Hall, Radiative, Auger on are included. Also, we investigate degeneracy device by considering band...

We have developed a computer program that simulates the electrical characteristics of p <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> - n HgCdTe photodetector. Using solutions to Poisson and Continuity equations we investigate low temperature behavior determine optimum working conditions enhance detectivity. Our model considers complete Fermi Dirac statistics, major recombination mechanisms, band tunneling, trap assisted tunneling...

Silicon based single junction solar cell technology continued to make significant strides in the past year with new world record module efficiencies being reported for Panasonic heterojunction thin intrinsic layer (HIT) (23.8%) and SunPower rooftop silicon (24.1%). The HIT which is comprised of amorphous (a-Si) crystalline (c-Si) currently holds efficiency (25.6%) a cell. Further improvement this requires rigorous understanding underlying physics device. device performance a-Si c-Si cells...

Silicon heterojunction (SHJ) solar cell technology has continued to mature in recent years. A tremendous amount of research been directed towards the optimization structure obtain higher device performance. Any further improvement design requires a comprehensive understanding all factors that affect charge transport. Most theoretical attempts describe transport have based on traditional drift-diffusion (DD) methods, which are unable capture physics crucial regions device. In this work we...

Silicon based technology continues to mature and move steadily towards the auger limited maximum efficiency (~29%). In particular silicon heterojunction currently holds world record for single junction cells. Optimization of solar cells now requires a concentrated deep understanding physics transport. this paper we present multi-physics/multiscale approach analyzing transport in We self-consistently couple traditional drift-diffusion model an ensemble Monte Carlo kinetic create multiscale...

Silicon heterojunction solar cells comprised of crystalline silicon and a thin amorphous top layer, have consistently achieved record device efficiencies in recent years for Si devices. In particular, the intrinsic layer provides passivation at a-Si/c-Si heterointerface that facilitates high V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">oc</sub> 's. However, this also results fields where hot carrier effects may dominate, contrast to...

Passivation layers based on hydrogenated amorphous silicon (a-Si:H) have enabled heterojunction solar cells to achieve high fill factors and conversion efficiencies. Traditionally, intrinsic a-Si:H(i) provides passivation between the doped a-Si c-Si. However, studies shown that there is a 2mA/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> optical loss associated with this layer. In paper we explore option of using a-SiO <sub...

Background: The role of left atrial (LA) enlargement has a significant and independent association with moderate severe diastolic dysfunction, fibrillation, ventricular (LV) end-diastolic volume. Clinical features heart failure have shown correlation LV dilatation ejection fraction (LV). Aims: Correlation clinical substrates cardiac remodeling, especially not been well-documented. We sought to determine the major factors that are associated LA in subjects failure. Materials Methods: studied...