An approximate expression proposed by Green predicts the maximum obtainable fill factor (FF) of a solar cell from its open-circuit voltage (Voc). The was originally suggested for silicon cells that behave according to single-diode model and, in addition Voc, it requires an ideality as input. It is now commonly applied assuming unity factor—even when are not low injection—as well non-silicon cells. Here, we evaluate accuracy several cases. In particular, calculate recombination-limited FF and...

In silicon heterojunction solar cells made with high-lifetime wafers, resistive losses in the contacts dominate total electrical power loss. Moreover, it is widely believed that hole contact stack-a-Si:H(i)/a-Si:H(p)/ITO/Ag-is responsible for more of this loss than electron stack. article, we vary a-Si:H(i) layer thickness, a-Si:H(p) thickness and doping, indium tin oxide (ITO) determine effect each variation on resistivity addition, make complete same variations correlate their series to...

As single-junction Si solar cells approach their practical efficiency limits, a new pathway is necessary to increase in order realize more cost-effective photovoltaics. Integrating III–V onto multijunction architecture promising that can achieve high while leveraging the infrastructure already place for and technology. In this Letter, we demonstrate record 15.3%-efficient 1.7 eV GaAsP top cell on GaP/Si, enabled by recent advances material quality conjunction with an improved device design...

Silicon heterojunction (SHJ) solar cell device structures use carrier-selective contacts that enable efficient collection of majority carriers while impeding the minority carriers. However, these can also be a source resistive losses degrade performance cell. In this article, we evaluate hole contact- hydrogenated amorphous silicon (a-Si:H)(i)/a-Si:H(p)/indium tin oxide (ITO)/Ag-by simulating transport in SHJ transfer length method structures. We study contact resistivity behavior by varying...

Metal reflectors or electrodes in contact with optoelectronic devices can induce parasitic light absorption. A low‐refractive‐index (low‐ n ) layer inserted between the metal reflector and optically active layer(s) reduces this We investigate use of porous, nanoparticulate films as low‐ layers, fabricate silicon solar cells nanoparticle/silver rear reflectors. vary porosity thus (between 1.1 1.5) nanoparticle films, which are deposited by a controllable aerosol spray process, their...

We study the absorption in a silicon heterojunction solar cell. After determining texture and film properties of cell from experimental data, we apply ray tracing to quantify as function wavelength depth each cell's many layers. By comparing results measured external quantum efficiency, determine collection efficiency front intrinsic a-Si:H be 0.35. then asses optimal thickness <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">t</i> <sub...

The front transparent conductive oxide (TCO) layers of silicon heterojunction solar cells need to be optimized electrically and optically minimize losses due sheet resistance free carrier absorption. This optimization has already investigated for the wavelength range 300-1100 nm, but not projected 700-1100 nm a cell that is applied in tandem structure as bottom cell. Here, we demonstrate routine determining total loss associated with TCO layer employ it determine which density, mobility,...

Silicon heterojunction solar cells are a promising device architecture due to their high efficiencies, yet these tend suffer from series resistances. Until recently, little has been done understand the main factors contributing resistance. Here we begin systematic analysis determine important interactions between different layers in hole-collecting contact consisting of stack a-Si:H(i)/aSi:H(p)/ITO/Ag. We attempt address how performs when intrinsic amorphous silicon (a-Si:H(i)) layer...

In silicon heterojunction solar cells, optimization of the front transparent conductive oxide (TCO) layer is required in order to minimize both electrical and optical losses. this article, design guidelines for overall power loss minimization are presented-extending previous TCO work that was limited maximization short-circuit current density alone-and these used prescribe best TCOs single-junction silicon-based four-terminal tandem applications. The employed procedure determines associated...

In this work, we present recent progress towards high-efficiency epitaxial 1.7 eV/1.1 eV GaAsP/Si tandem cells. First, Si bottom cells with thick, n-GaAsP optical filtering layers, yielding an efficiency of 6.25%. Furthermore, demonstrate 2-terminal Voc 1.596 V using unoptimized tunnel junction to interconnect the GaAsP and sub-cells. Finally, discuss design SiNx/SiOx double-layer anti-reflectance coating (ARC) for cells, which boosted Jsc by 28.9%.

Green [1] and Swanson Sinton [2] proposed two different approaches to predict the maximum obtainable fill factor (FF) from open-circuit voltage (Voc) of a solar cell. This is convenient because internal or implied cell can be measured at early stages device processing (e.g., after passivation), giving rapid insight into expected performance. However, these methods assume that recombination linear in excess carrier density. In addition, both formulas also require ideality known, and, while...

We modify silicon heterojunction solar cells for the near-infrared (NIR) spectrum and reduced generation rate that they experience in tandems, with a focus on front transparent conductive oxide layer rear reflector. These are then incorporated into both two-terminal four-terminal including new, optically coupled tandem architecture utilizes “PVMirror”. A PVMirror is curved PV module may include spectrum-splitting film or coating sunward side of cells. Near-infrared light transmitted to...

In this paper, we present a self-consistent theoretical model for metal-insulator semiconductor (MIS) dual band ultraviolet (UV) photodetector with modified structure implying an arbitrarily defined insulating potential barrier as its active region. Utilizing our proposed model, the dark and photocurrent density-voltage (J-V) characteristics of MIS UV photodetectors multi-quantum wells silicon (MQWs) are calculated. We demonstrate that current is reduced in suggested structure, because...

This article intends to propose a self-consistent theoretical model for Metal–Insulator–Semiconductor (MIS) dualband Si/SiO2 multi-quantum well (MQW) UV photodetector. Employing this model, general characteristics of MIS photodetectors such as dark and photocurrent density–voltage (J–V) curves are simulated. The results reveal that the proposed structure reduces current since first resonant tunneling multi-barrier is designed electron probability unity at energies coincident with peak...

In this paper, we present a multi quantum dot (MQD) white light emitting Diode structure. order to construct, spectrum, use different layers generate blue, green and red colors. These contain dots with active of In_(x)Ga_(1-x)N GaN barrier. We investigate that these three colors is theoretically are extracted from each set dots, then combined desired intensities together finally near will be created. Through adjusting material composition sizes, the color quality can...

In this paper, we present a multi quantum dot (MQD) white light emitting Diode structure. order to construct, spectrum, use different layers generate blue, green and red colors. These contain dots with active of In(x)Ga(1-x)N GaN barrier. We investigate that these three colors is theoretically are extracted from each set dots, then combined desired intensities together finally near will be created. Through adjusting material composition sizes, the color quality can improved. Piezoelectric...