On-going prediction and synthesis of two-dimensional materials attract remarkable attention to engineer high performance intended devices. Through this, comprehensive detailed uncovering the material properties could be accelerated achieve this goal. Hexagonal boron arsenide (h-BAs), a graphene counterpart, is among most attractive 2D semiconductors. In work, our objective explore mechanical, electronic, thermal h-BAs. We found that novel can show elastic modulus 260 GPa, which independent...

Using non-equilibrium Green's function, we study the spin-dependent electron transport properties in a zigzag silicene nanoribbon. To produce and control spin polarization, it is assumed that two ferromagnetic strips are deposited on both edges of nanoribbon an electric field perpendicularly applied to plane. The polarization studied for parallel anti-parallel configurations exchange magnetic fields induced by strips. We find complete can take place presence perpendicular configuration work...

Regarding the spin field effect transistor (spin FET) challenges such as mismatch in injection and insufficient life time, we propose a silicene based device which can be promising candidate to overcome some of those problems. Using non-equilibrium Green's function method, investigate spin-dependent conductance zigzag nanoribbon connected two magnetized leads are supposed either parallel or anti-parallel configurations. For both configurations, controllable current obtained when Rashba is...

With the ever-increasing global requirement for energy-harvesting, development of a promising thermoelectric material has become one main hot topics science. Due to extraordinary properties two-dimensional materials, this study is aimed at analyzing characteristics graphene counterparts, including BC3, BC6N, BC6N-rec (rectangular lattice), and BX systems (where X = P, As, Sb). Using first-principles calculations combined with lattice Boltzmann method (DFT-BTE), it shown that synthesized...

In this paper, we study the spin-dependent electron transport properties of graphene n-p-n junction in presence Rashba spin-orbit interaction using transfer matrix method. It is found that for a junction, spin-resolved conductance depends on strength and built-in potential junctions. For an appropriate value strength, perfect spin-inversion with high can take place when biased sufficient potential. case, be used as spin-inverter which important device spintronic. Finally, n-n-n investigated...

Spin-inversion properties of an electron in nanoscale graphene sheets with a Rashba spin-orbit barrier is studied using transfer matrix method. It found that for proper values strength, perfect spin-inversion can occur wide range incident angle near the normal incident. In this case, sheet be considered as spin-inverter. The efficiency spin-inverter increase up to very high value by increasing length barrier. effect intrinsic interaction on spin inversion then studied. shown decreases...

Silicene has been recently synthesized in the form of nanoribbons on anisotropic Ag (110) surface. The effects disorder silicene are expected to exhibit remarkable properties nanostructures. It found that electronic structures doped zigzag (ZSiNRs) different from those pristine ZSiNRs. In this paper, we study spin dependent electron conductance ZSiNRs substitutionally with Boron/Nitrogen (B/N) atoms by using Green's Function method based Tight Binding approximation and Landauer-Buttiker...

In this Letter, the authors study effects of electrostatic potential on spin-inversion properties in nano-scale graphene sheets with a single Rashba spin-orbit barrier using transfer matrix method. The optimum values constant are obtained for maximum electron spin-inversion. It is found that, presence potential, perfect can take place all incident angle, whereas absence only at specific angle. spin-dependent conductance as well efficiency spin-inverter increase potential.

Electronic properties of (n,0) zigzag tungsten disulfide WS2 nanotubes and transport (7,0) nanotube heterojunction are investigated by utilizing non-equilibrium Green's function formalism (NEGF). The results reveal that inclusion the spin-orbit (SO) coupling significantly reduces value band gap about 15.52\%. additionally, strong negative differential resistances take place in voltage regions between -0.2 -0.4 V as well -0.5 -0.6 V. Moreover, temperature dependent elaborately this work. show...

Using Green's function method, spin-resolved thermoelectric quantum transport is examined in a molecular junction composed of phenalene molecule connected to two external graphene leads with and without magnetic exchange potential application on the scattering region. Two different configurations system are considered: perpendicular parallel leads. Theoretical results show that separates Seebeck coefficients spin states dramatically increases coefficients. Furthermore, temperature gradient...

Polythiophene is a highly conductive molecule which possesses thermal and chemical stability showing great performance in electrical devices. also shows an uncommon demanding property named negative differential resistance decrease of electron current with increase applied voltage. To address this issue, work we study theoretically transport properties polythiophene molecular bridge sandwiched between two metal leads the presence Nitrogen atom as substitute for one or Carbon atoms molecule....