A5057948544- Pulsed Power Technology Applications
- GaN-based semiconductor devices and materials
- Analytical Chemistry and Sensors
- Integrated Circuits and Semiconductor Failure Analysis
- Gyrotron and Vacuum Electronics Research
- Gas Sensing Nanomaterials and Sensors
- Advanced Chemical Sensor Technologies
- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and interfaces
- Electrostatic Discharge in Electronics
- Bone Tissue Engineering Materials
- Photorefractive and Nonlinear Optics
- Photonic and Optical Devices
- ZnO doping and properties
- Semiconductor materials and devices
- Metal and Thin Film Mechanics
- Advanced ceramic materials synthesis
- Electrospun Nanofibers in Biomedical Applications
- Additive Manufacturing and 3D Printing Technologies
- 3D Printing in Biomedical Research
- Advanced Fiber Laser Technologies
- Advanced Sensor and Energy Harvesting Materials
- Vacuum and Plasma Arcs
- Ga2O3 and related materials
- Macrophage Migration Inhibitory Factor
Xi'an Jiaotong University
2013-2025
Xi’an Jiaotong-Liverpool University
2023
Zhengzhou University
2017-2022
Northwest Institute of Nuclear Technology
2013-2020
Xi’an University
2013-2017
Xi'an University of Technology
2013-2017
Hebei University of Technology
2009-2014
Xi'an University of Science and Technology
2014
Xi'an University of Architecture and Technology
2012
National Chung Shan Institute of Science and Technology
1992-2006
The piezoelectric effect of biological materials promotes bone growth. However, the material should be subjected to stress before it can produce an electric charge that repair and reconstruction conducive fracture healing. A novel method for in vitro experimentation with physiological load is presented. dynamic loading device simulate force human motion provide periodic when co-cultured cells was designed obtain a realistic expression on repair. Hydroxyapatite (HA)/barium titanate (BaTiO3)...
We propose and demonstrate a method to reduce the pulse width timing jitter of relativistic electron beam through THz driven compression. In this longitudinal phase space is manipulated by linearly polarized copropagating in dielectric tube such that bunch tail has higher velocity than head, which allows simultaneous reduction both after passing drift. experiment, compressed more factor 4 from 130 fs 28 with arrival time also reduced 97 36 fs, opening up new opportunities using pulsed beams...
In this paper, the performance of avalanche Gallium Arsenide (GaAs) Photoconductive Semiconductor Switch (PCSS) aimed at DC charging and fiber-triggered high-voltage switches (HVS) applications is reported. The optimal annealing condition suitable for device shown to be 250 °C 30 min by studying effects different conditions on dark-state leakage current PCSS. Based this, a novel annealing-grinding (AG) process proposed improve electrical characteristics GaAs With an electrode gap 10 mm bias...
In this letter, the triggering efficiency of 1-mm-gap, opposed-contact GaAs Photoconductive Semiconductor Switch (PCSS) is studied in avalanche mode. Compared with anode-triggered PCSSs, it found that cathode-triggered devices are shorter delay time and lower on-state resistance under same operation conditions. The jitter ~45.6 ps also achieved at power level <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math...
In this article, the characteristics of linear GaN photoconductive semiconductor switch (PCSS) in high-power microwaves are investigated by Silvaco TCAD (Technology Computer-Aided Design). By comparison optical absorption efficiency among three types PCSS structures, optimized Fe-doped is designed a side-illuminated, vertical structure with spot size <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$1\times...
We compared the field emission properties of following four types nanowires: GaN nanowire, Ga2O3 nanowire with coating, and coating. The turn-on values for GaN, Ga2O3, GaN/Ga2O3, Ga2O3/GaN nanowires are 4.3, 6.2, 4.7, 2.6 V/μm, respectively. It has been found that oxide coatings effectively improve capability nanowires, while nitride depress electron nanowires. corresponding Fowler–Nordheim analysis revealed improvement is attributed to accumulation on coated particles interfacial...
Abstract The switching mechanism and the thermal process of a gallium arsenide (GaAs) photoconductive semiconductor switch (PCSS) with an opposed-contact is investigated by numerical simulation two-dimensional (2D) structure using temperature-dependent physical parameters carriers in GaAs. Triggered low-energy laser pulse, PCSS switches on due to formation evolution multiple powerful avalanche domains. 2D evolving characteristics domains two sides photogenerated plasma during transient are...
To meet the miniaturization of all-solid-state high-power microwave drive technology based on photoconductive semiconductor switches (PCSSs), a vertical gallium nitride (GaN) PCSS that is triggered by micro-joules energy and picoseconds pulse width laser presented. The device has showed low triggering optical fast response. When bias-voltage 3 kV 33 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu...
To meet the needs of wide band gap (WBG) gallium nitride (GaN)-based photoconductive semiconductor switch (PCSS) in high-voltage and high-power microwave systems. Herein, silicon (Si3N4) dielectric films were deposited on GaN PCSS using plasma-enhanced chemical vapor deposition (PECVD) illuminated from side device. A high refractive index 2.03 a permittivity 7.97 obtained Si3N4 films, which are characterized by optical properties. According to electrostatic field simulation, Si3N4's...
In order to meet the requirements of ultra-fast real-time monitoring sarin simulator with high sensitivity and selectivity, it is great significance develop performance dimethyl methylphonate (DMMP) sensor. Herein, we proposed a DMMP sensor based on p-hexafluoroisopropanol phenyl (HFIPPH) modified self-assembled single-walled carbon nanotubes (SWCNTs) field effect transistor (FET) structure. The self-assembly method provides 4 nanometres thick micron sized SWCNT channel, selectivity DMMP....
For the application of third-generation compound semiconductors based on high-voltage, high-power, and high-frequency devices, particularly in photoconductive semiconductor switches (PCSSs), ohmic contact preparation technology semi-insulating substrates is crucial. However, iron-doped gallium nitride (SI-GaN:Fe) with low carrier concentration high bulk resistivity has a very difficult time achieving good characteristics. Here, we have demonstrated preliminary results an interesting class...
The operation mechanism of a gallium nitride (GaN) photoconductive semiconductor switch (PCSS) based on semi-insulating (SI) wafer was analyzed using physics-based numerical simulation. After the activation 532-nm laser pulse with peak power 5.3 kW, 0.1-mm length GaN PCSS biased at 1 kV linearly responded to excitation laser. When bias voltage exceeds 2 kV, operates in quasi-avalanche mode. Powerful avalanche domains were numerically observed cathode side and then immediately annihilated;...
With unique characteristics, especially the simultaneous combination of high-power capacity and high repetition frequency, gallium arsenide photoconductive semiconductor switches (GaAs PCSS) have a wide range applications in field pulsed power technology. In view ever-shrinking device area ever-increasing operating voltage GaAs PCSS, its sidewall morphology has become more obvious on lifetime reliability device. To address this issue, article comparatively investigates influence PCSS...
Hydrogen ion sensor (pH sensor) with high sensitivity and good stability has great potential in modern life, medicine, industry, other fields. As a core of the pH sensor, an ion-sensitive field-effect transistor (ISFET) based on SnO2 is paired selectivity Al2O3 inorganic insulating film, which enhances its sensitivity. In presence voltage applied to extended gate, gate channel act as capacitance plates, equivalent electrical double layer (EDL). The hydrogen ions solution alter capacitance,...
Different spatiotemporal modes of ionization wave propagation at opposite polarity bipolar pulses in a micro-dielectric barrier discharge structure device are investigated. The is fabricated on heavily doped n-type silicon substrate, and 1 cm × square cavity formed the 180 μm-thick polyimide film. determined by observed, details streamerlike mode wavelike under positive negative half cycles investigated, respectively. speeds waves ∼120 km/s ∼40 average ∼150 ∼70 maximum, parameters pulses,...