We have developed SiC trench structure Schottky diodes and double-trench MOSFETs. succeeded in improving device performance by the reduction of electric field through introduction aforementioned structures. The threshold voltage diode is 0.48V smaller than planar. Also, lowest on-resistance MOSFETs was achieved.

Fast states at SiO2/SiC interfaces annealed in NO 1150–1350 °C have been investigated. The response frequency of the interface was measured by conductance method with a maximum 100 MHz. state density evaluated based on difference between quasi-static and theoretical capacitances (C−ψS method). Very fast states, which are not observed as-oxidized samples, were generated annealing, while existing an decreased approximately 90%. very higher than 1 MHz increased when energy level approaches...

Two semi-Lagrangian schemes that guarantee exactly mass conservation are proposed. Although they in a nonconservative form, the interpolation functions constructed under constraint of cell-integrated value (mass) is advanced by remapping Lagrangian volume. Consequently, resulting conserve for each computational grid cell. One them (CIP–CSL4) direct extension original cubic-interpolated propagation (CIP) method which cubic polynomial used as function and gradient calculated according to...

Interface properties of 4H-SiC (112̅0) and (11̅00) walls, the absence junction FET resistance, higher metal-oxide-semiconductor (MOS) structures annealed in nitric oxide are characterized by conductance, high-low, C-ψ <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">s</sub> methods. Compared with (0001) MOS structures, generation very fast interface states nitridation is much smaller (11̅00). The effective mobility planar MOSFETs fabricated on...

Differential scanning calorimetry (DSC), atomic force microscopy (AFM), wide-angle X-ray scattering (WAXD), and solid-state 13C NMR have been used to investigate the crystalline/amorphous structure molecular mobility of biodegradable poly(butylene adipate-co-44 mol % butylene terephthalate) [P(BA-co-44 BT)] copolyester sample crystallized from melt. The DSC endothermic peak, which is ascribed melting crystalline region, was broad relative those reported for conventional partially polyesters....

Generation and elimination of mobile ions in thermally grown SiO2 on 4H-SiC(0001) were systematically investigated by electrical measurements MOS capacitors. In contrast to a SiO2/Si system, intrinsic positive found exist as-oxidized SiO2/SiC structures, leading significant instability SiC-MOS devices. Post-oxidation annealing Ar ambient mostly eliminates the ions, but they are generated again subsequent high-temperature hydrogen despite improved interface quality. The density was estimated...

A novel nonvolatile logic style, called complementary ferroelectric-capacitor (CFC) logic, is proposed for low-power logic-in-memory VLSI, in which storage elements are distributed over the logic-circuit plane. Standby currents can be cut off by using ferroelectric-based elements, and standby power dissipation greatly reduced. Since switching functions merged into ferroelectric capacitors capacitive coupling effect, reduction of active device counts achieved. The use stored data coupled...

Mesophotic habitats are potential refugia for corals in the context of climate change. The seawater temperature a mesophotic habitat is generally lower than shallow habitat. However, susceptibility and threshold temperatures not well understood. We compared 11 species to understand their thermal stress thresholds using physiological parameters. Coral fragments were exposed two treatments, with set at ~30°C ~31°C, low-temperature treatment ~28°C as “no stress” condition 14 days. found that...

The trench gate structure MOSFET, with its lack of JFET resistance, is one the structures able to achieve low on-state resistance [1,2]. In 2008, this group succeeded in fabricating 790V SiC MOSFETs lowest R on,sp (1.7 mΩcm 2 ) at room temperature. However these devices had issues regarding oxide destruction bottom during high drain-source voltage application. order improve problem, developed double-trench MOSFET structure. This has both source trenches and trenches. paper compares two kinds...

We study the high-energy (1-4 MeV) proton production from a slab plasma irradiated by ultrashort high-power laser. In our 2.5-dimensional particle-in-cell simulations, p-polarized laser beam of 1.6 x 10(19) W/cm(2), 300 fs, lambda(L)=1.053 microm, illuminates normally; consists hydrogen plasma, and target thickness spot size are 2.5lambda(L) 5lambda(L), respectively. The simulation results show that an emitted energy depends on density, three kinds beams generated at surfaces: one kind is...

The effect of edaravone, a novel free radical scavenger, was assessed functionally and histologically using rat spinal cord contusion model.To investigate the edaravone on neuroprotection after injury in rats.The results immediate physical damage (primary injury), followed by prolonged neural tissue disorder (secondary injury). This secondary process has been suggested to be induced lipid peroxidation. Edaravone reported inhibit peroxidation cerebral ischemia models.Spinal at T10 level with...

Silicon Carbide (SiC) devices have the potential to reduce energy losses in high power applications. However SiC yet achieve ideal performance levels. This paper presents diodes and MOSFETs with advanced trench structures. These succeeded improving by reduction of internal electric field. Trench Schottky are able forward voltage drop double-trench show extremely low on-resistance. In addition, transfer mold type modules using demonstrated temperature operation density. transfer-molded module...