A5041531214- Semiconductor Lasers and Optical Devices
- Semiconductor Quantum Structures and Devices
- Photonic and Optical Devices
- 2D Materials and Applications
- Nanowire Synthesis and Applications
- Ga2O3 and related materials
- Graphene research and applications
- Semiconductor materials and devices
- Gas Sensing Nanomaterials and Sensors
Beijing University of Posts and Telecommunications
2022-2025
3D assembly technology is a cutting-edge methodology for constructing high-performance and multifunctional photodetectors since some attractive photodetection features such as light trapping effect, omnidirectional ability, high spatial resolution can be introduced. However, there has not been any report of 3D-assembled multimode owing to the lack design fabrication guideline electrodes serving heterostructures. In this study, dual-mode photodetector (3DdmPD) was realized successfully via...
Room-temperature continuous-wave operation of InGaAs/AlGaAs quantum well lasers directly grown on on-axis silicon (001) has been demonstrated. A 420 nm thick GaAs epilayer completely free antiphase domains was initially the substrate in a metal-organic chemical vapor deposition system and other epilayers including four sets five-period strained-layer superlattices laser-structural layers were successively molecular beam epitaxy system. The prepared as broad-stripe Fabry-Perot ones with...
With the rapid development of high-speed imaging, aerospace, and telecommunications, high-performance photodetectors across a broadband spectrum are urgently demanded. Due to abundant surface configurations exceptional electronic properties, two-dimensional (2D) materials considered as ideal candidates for photodetection applications. However, with both high responsivity fast response time remain challenging issue all researchers. This review paper is organized follows. Section I introduces...
Dual-mode photodetectors (DmPDs) have attracted considerable interest due to their ability integrate multiple functionalities into a single device. However, 2D material/InP heterostructures, which exhibit built-in electric fields and rapid response characteristics, not yet been utilized in DmPDs. In this work, we fabricate high-performance DmPD based on graphene/InP Van der Waals heterostructure facile way, achieving broadband from ultraviolet-visible near-infrared wavelengths. The device...
The enhancement of the reliability silicon-based III–V quantum well lasers, especially those on an on-axis Si (001) substrate, is great importance now a days for development Si-based photonic and even optoelectronic integrated circuits really quite challenging. As experimental advancement, mainly by inserting pair InAlAs strained layers separately into upper lower AlGaAs cladding to effectively prevent formation in-plane gliding misfit-dislocations within boundary planes active region,...