A5025056507- Photonic and Optical Devices
- Semiconductor Lasers and Optical Devices
- Advanced Photonic Communication Systems
- Semiconductor Quantum Structures and Devices
- Optical Network Technologies
- Optical Coatings and Gratings
- Photonic Crystals and Applications
- Advanced Fiber Laser Technologies
- Advanced Fiber Optic Sensors
- Nanowire Synthesis and Applications
- Photonic Crystal and Fiber Optics
- Semiconductor materials and interfaces
- GaN-based semiconductor devices and materials
- Semiconductor materials and devices
- Advanced Optical Sensing Technologies
- Advancements in Semiconductor Devices and Circuit Design
- Plasmonic and Surface Plasmon Research
- Advanced Semiconductor Detectors and Materials
- Quantum Dots Synthesis And Properties
- Cleft Lip and Palate Research
- Advanced Optical Network Technologies
- Cosmology and Gravitation Theories
- Optical Wireless Communication Technologies
- Thin-Film Transistor Technologies
- ZnO doping and properties
Beijing University of Posts and Telecommunications
2016-2025
Ningxia Medical University General Hospital
2015-2024
State Key Laboratory of Information Photonics and Optical Communications
2014-2024
Ningxia Medical University
2010-2024
Arvinas (United States)
2024
Jiangxi Science and Technology Normal University
2023
Beijing Institute of Radio Metrology and Measurement
2023
Shandong University of Science and Technology
2022
Sun Yat-sen University
2017-2022
Sun Yat-sen Memorial Hospital
2021-2022
Paroxysmal nocturnal hemoglobinuria and atypical hemolytic uremic syndrome are diseases of excess activation the alternative pathway complement that treated with eculizumab, a humanized monoclonal antibody against terminal component C5. Eculizumab must be administered intravenously, moreover some patients paroxysmal on eculizumab have symptomatic extravascular hemolysis, indicating an unmet need for additional therapeutic approaches. We report activity two novel small-molecule inhibitors...
3D assembly technology is a cutting-edge methodology for constructing high-performance and multifunctional photodetectors since some attractive photodetection features such as light trapping effect, omnidirectional ability, high spatial resolution can be introduced. However, there has not been any report of 3D-assembled multimode owing to the lack design fabrication guideline electrodes serving heterostructures. In this study, dual-mode photodetector (3DdmPD) was realized successfully via...
In this paper, we study the effects of parity violation on non-Gaussianities primordial gravitational waves in framework Ho\ifmmode \check{r}\else \v{r}\fi{}ava-Lifshitz theory gravity, which high-order spatial derivative operators, including ones violating parity, generically appear. By calculating three-point function, find that leading-order contributions to come from usual second-order terms, produce same bispectrum as found general relativity. The $n$th terms are always suppressed by a...
As an emerging ultrathin semiconductor material, Bi2O2Se exhibits prominent performances in electronics, optoelectronics, ultrafast optics, etc. However, until now, the in-plane growth of thin films is mostly fulfilled on atomically flat mica substrates with interfacial electrostatic forces setting obstacles for transfer to fabricate functional van der Waals heterostructures. In this work, controlled inclined realized apparently reduced contact areas upon flakes. Consequently, could be...
In this study, we have designed and fabricated a flexible low-cost data glove then successfully realized the accurate gesture recognition. By sewing reduced graphene oxide (RGO)-coated fiber that is prepared in simple method onto textile glove, manufactured has been used to monitor motion of ten finger joints from one hand. particular, accurately realize static dynamic recognition via respectively. Experimental results on classification gestures representing digits "0" "9" show good...
Views Icon Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Twitter Facebook Reddit LinkedIn Tools Reprints and Permissions Cite Search Site Citation Jin-Hua Hu, Yong-Qing Huang, Xiao-Feng Duan, Qi Wang, Xia Zhang, Jun Xiao-Min Ren; Enhanced absorption of graphene strips with a multilayer subwavelength grating structure. Appl. Phys. Lett. 1 December 2014; 105 (22): 221113. https://doi.org/10.1063/1.4903491 Download citation file: Ris (Zotero) Reference...
Vertical GaAs nanowires on Si (111) substrate were grown by metal organic chemical vapor deposition via Au-catalyst vapor−liquid−solid mechanism. Stacking-faults-free zinc blende realized using AlGaAs/GaAs buffer layers and growing under the optimized conditions, that alloy droplet act as a catalyst rather than an adatom collector its size composition would keep stable during growth. The contributes to growth of stacking-faults-free nanowires. Moreover, layers, epitaxial well-aligned NWs was...
A versatile any point bias control scheme for the Mach-Zehnder modulator is proposed. The ratio of first-order harmonic and average output power was used as feedback signal. We also demonstrate its effectiveness with simulations experiments. This technique has been shown to be independent optical input modulator. results show that this an effective suitable a variety modulation formats. penalty locking small it 0.5 dB in OSNR penalty. system BER performance observed 72 h without degradation.
Highly efficient metal/semiconductor/metal structured photodetectors were constructed based on Bi<sub>2</sub>O<sub>2</sub>Se thin films with lithography-free electrode fabrication.
We have designed three mode order converters using the sub-wavelength grating on silicon-on-insulator substrate. The proposed can separately realize conversion from fundamental transverse electric to first-order (TE0-to-TE1), second-order (TE0-to-TE2) and third-order (TE0-to-TE3) with compact device sizes good performances. simulation results show that efficiencies of TE0-to-TE1, TE0-to-TE2 TE0-to-TE3 are larger than 94.4%, 95.7% 83.7% in wavelength ranging 1.5 µm 1.6 µm, corresponding...
Room-temperature continuous-wave operation of InGaAs/AlGaAs quantum well lasers directly grown on on-axis silicon (001) has been demonstrated. A 420 nm thick GaAs epilayer completely free antiphase domains was initially the substrate in a metal-organic chemical vapor deposition system and other epilayers including four sets five-period strained-layer superlattices laser-structural layers were successively molecular beam epitaxy system. The prepared as broad-stripe Fabry-Perot ones with...
Abstract Great advancements in III–V/Si epitaxy have pushed quantum dot lasers to the forefront of silicon photonics. In this work, we designed structures evanescent coupled distributed feedback with asymmetric gratings, which made significant improvement on-chip output power while maintaining single-longitudinal-mode stability. The optimal /4 phase-shift position (the ratio grating length from rear-end total length) conventional 0.50 0.64 allows at both sides waveguide be increased 1.0...
The coupling issue between the photodetector chip and optical fiber in module packaging is studied. Taking high-speed high-power modified uni-traveling carrier (MUTC-PD) as an example, a calculation method proposed to establish relationship single-mode distance incident field distribution. effect of on output performance MUTC-PD analyzed. results show that increases, more uniform distribution beneficial for improving under high power. Additionally, 20μm-diameter fabricated measured. indicate...
Dual-mode photodetectors (DmPDs) have attracted considerable interest due to their ability integrate multiple functionalities into a single device. However, 2D material/InP heterostructures, which exhibit built-in electric fields and rapid response characteristics, not yet been utilized in DmPDs. In this work, we fabricate high-performance DmPD based on graphene/InP Van der Waals heterostructure facile way, achieving broadband from ultraviolet-visible near-infrared wavelengths. The device...
Formation mechanism and optical properties of InAs quantum dots (QDs) on the surface GaAs nanowires (NWs) were investigated. This NW-QDs hybrid structure was fabricated by Au-catalyzed metal organic chemical vapor deposition. We found that formation distribution QDs strongly influenced deposition time as well diameter NWs. A model based adatom diffusion proposed to describe evolution process QDs. Photoluminescence emission from with a peak wavelength 940 nm observed at room temperature. The...
We report electrically pumped continuous-wave (CW) InAs/GaAs quantum dot lasers directly grown on planar exact silicon (001) with asymmetric waveguide structures. Surface hydrogen-annealing for the GaAs/ Si templates and low-temperature growth GaInP upper cladding layers were combined in of laser structure to achieve a high slope efficiency. For broad-stripe edge-emitting 2-mm cavity length 20-µm stripe width made from above structure, threshold current density 203.5 A/cm2 single-facet...
A high-speed and high-power modified uni-traveling-carrier photodiode (MUTC-PD) is optimized fabricated. The optimization method takes carrier transport as the core considers hole time limited bandwidth of MUTC-PD for first time. Taking into account impact electron RC constant on device performance, simulated In structure epitaxy, it proposed to use graded doping fit Gaussian reduce epitaxial growth error. measured reaches 34 GHz RF output power 17.1 dBm with mesa diameter <inline-formula...