We describe a microelectromechanical (MEM) relay technology for high-performance reconfigurable RF circuits. This microrelay, fabricated using surface micromachining, is metal contact with electrical isolation between signal and drive lines. provides excellent switching performance over broad frequency band (insertion loss of 0.1 dB 30 at 40 GHz), versatility in switch circuit configurations (microstrip coplanar, shunt series), the capability monolithic integration high-frequency...

A monolithic true-time delay (TTD) network containing sixteen metal-to-metal contact RF microelectromechanical systems (MEMS) switches has been successfully fabricated and characterized. The TTD was designed to produce flat time over a dc-to-40 GHz bandwidth with full 360-degree phase control at 22.5-degree intervals 10.8 GHz. Measurements show close match the times for all switch states 2.2 2.6 dB of insertion loss 10 worst group ripple in dc-to-30 range 3 ps, well within single bit 5.8 ps.

A microstrip patch antenna using a defected ground structure (DGS) to suppress higher order harmonics is presented. An H-shaped defect on the plane with only one or more unit lattices has been utilized and yielded bandstop characteristics. Compared conventional without DGS cell, radiated power of at harmonic frequencies drastically decreased.

Herein, we present the use of a single gold nanorod sensor for detection diseases on an antibody-functionalized surface, based antibody–antigen interaction and localized surface plasmon resonance (LSPR) λmax shifts resonant Rayleigh light scattering spectra. By replacing cetyltrimethylammonium bromide (CTAB), tightly packed self-assembled monolayer HS(CH2)11(OCH2CH2)6OCH2COOH(OEG6) has been successfully formed prior to LSPR sensing, leading successful fabrication individual immunosensors....

A 300 GHz integrated heterodyne receiver and transmitter for wideband communication imaging applications have been developed in a 250 nm InP double-heterojunction bipolar transistor (DHBT) process. The integrates RF amplifier with balun, down-conversion mixer an IF amplifier, local oscillator, all on single chip. is composed of the identical circuit blocks oscillator addition to up-conversion mixer. Compared previous receivers transmitters reported at above 200 GHz, proposed work includes...

Terahertz (THz) communication is a promising technique for chip-to-chip and wireless personal area networks. In this paper, we present an experimental study design to realize such THz systems. We develop two different chip sets on-off-keying (OOK) modulation based transceivers which include carrier generators, modulators, amplifiers, baseband amplifiers. Specifically, the first set integrates circuit blocks OOK without amplifier short-range communication. addition, second includes modules...

A field-effect transistor (FET) is one of the most commonly used semiconductor devices. Recently, increasing interest has been given to FET-based biosensors owing totheir outstanding benefits, which are likely include a greater signal-to-noise ratio (SNR), fast measurement capabilities, and compact or portable instrumentation. Thus far, number have developed study biomolecular interactions, key drivers biological responses in vitro vivo systems. In this review, detection principles...

A new radio frequency (RF) probe using pogo pin tips for integrated chip (IC) measurement up to 50 GHz is proposed. It offers high durability due the pins and meets three key design criteria general IC measurement: (1) a 45° tilted shape with 70 μm tip protrusion easy microscope inspection, (2) linear alignment commercial pad contact, (3) 250 pitch compatible standard pitches. This distinct from traditional cards which place in vertical form, diagonal arrangement, at wide intervals. The...

A 100-element 10-GHz grid amplifier has been developed. The active devices in the are chips with heterojunction-bipolar-transistor (HBT) differential pairs. metal pattern was empirically designed to provide effective coupling between HBTs and free space. Two independent measurements, one focusing lenses other without, were used characterize grid. In each case, peak gain 10 dB at GHz a 3-dB bandwidth of 1 GHz. input output return losses better than 15 maximum power 450 mW, minimum noise...

In this paper, H-band (220-325 GHz) power amplifier (PA) integrated circuits (ICs) are presented using 250-nm InP HBT technology, where a cascode topology was adopted to achieve high gain and output power. Three PAs were designed: PA1 implemented with two-stage HBTs, PA2 combined two PA1s, PA3 four by Wilkinson couplers without isolation resistors. Electromagnetic simulations carried out for the accurate design of passive such as microstrip line, capacitor, RF pads. The measured insertion...

This letter presents an ultra-wideband distributed amplifier (DA) implemented in a 250 nm InP HBT technology. Four cascode gain cells are along the input and output microstrip lines to achieve wideband operation. Each cell employs inductive peaking at further enhance bandwidth align phase delay between lines. All dc bias components fully integrated on-chip. The DA exhibits measured of 10 dB with 3 extending from 40 222 GHz. maximum power was be 6.0, 9.2, 8.5 dBm 60, 77, 134 GHz,...

A monolithic Ka-band true-time-delay (TTD) switched-line network containing 12 metal-to-metal contact RF microelectromechanical system switches has been successfully fabricated and characterized on a 75-/spl mu/m-thick GaAs substrate. The compact 9.1-mm/sup 2/ TTD was designed to produce flat delay time over dc-to-40-GHz bandwidth with full 360/spl deg/ phase control at 45/spl intervals 35 GHz. Measurements show match within 2% the times GHz for all eight switch states 2.2-dB average...

RF MEMS switches have been successfully integrated with HEMT MMIC circuits on a GaAs substrate to construct dual-path power amplifier at X-band. The uses two the input guide signal between paths. Each path provides single-stage amplification using different size devices, one 80-μm width and other 640-μm. Depending required output level, of paths is selected minimize dc consumption. Measurements showed producing similar small gains 13.2 11.5 dB 10 GHz for large respectively. best PAE was 28.1...

A delay-locked loop (DLL)-based clock generator for dynamic frequency scaling has been developed in a 0.35- <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$muhbox m$</tex> CMOS technology. The proposed can generate signals ranging from 120 MHz to 1.8 GHz and change the dynamically short time. If scales its output by programming with same last bit, it takes only one cycle lock. In addition, inherits advantages of DLL. DLL-based occupies 0.07...

Label-free electrical detection of deoxyribonucleic acid (DNA) hybridization was demonstrated using an AlGaN/GaN high electron mobility transistor (HEMT) based transducer with a biofunctionalized gate. The HEMT DNA sensor employed the immobilization amine-modified single strand on self-assembled monolayers 11-mercaptoundecanoic acid. exhibited substantial current drop upon introduction complimentary to gate well, which is clear indication hybridization. application 3 base-pair mismatched...

A transmission-line type fluid-level sensor with a low-cost connected oscillator and detector is proposed. The designed physical applicating microwave technology simple that relies on radio frequency (RF) signal-attenuation changes based the fluid's height. proposed can provide real-time measurements of fluid height inside an opaque metal pipe by inserting microstrip line into pipe, module at each end. level be accurately determined portable multimeter, eliminating need for complex...

The radio-frequency (RF) electrical response of monolayer graphene is reported. From the measured S-parameter in range 10 MHz to 50 GHz, a simple equivalent resistor–inductor–capacitor (R–L–C) circuit established analyze frequency impedance. impedance magnitude shows significant dependence only below GHz and this dispersive behavior originated from graphene–metal contact. Above there no distinctive change overall characteristic due absence skin effect low intrinsic kinetic inductance...

A method in which a permanent magnet is introduced onto polydiacetylene (PDA) vesicle chips for enhancement of the fluorescence PDA vesicles. This strategy can be applied to general antibody-based detect clinically important biomarkers disease diagnosis.