A5066254071- Magnetic properties of thin films
- Magnetic and transport properties of perovskites and related materials
- Advanced Memory and Neural Computing
- Metal-Organic Frameworks: Synthesis and Applications
- Software Engineering Techniques and Practices
- Magnetism in coordination complexes
- Advanced NMR Techniques and Applications
- Multiferroics and related materials
- Software Engineering Research
- Ferroelectric and Negative Capacitance Devices
- Software System Performance and Reliability
- Model-Driven Software Engineering Techniques
- Heusler alloys: electronic and magnetic properties
- Advanced Software Engineering Methodologies
- Advanced Condensed Matter Physics
Nanjing University
2014-2025
Collaborative Innovation Center of Advanced Microstructures
2025
National Laboratory of Solid State Microstructures
2022
Chiral magnets have recently gained recognition as ideal hosts for topological spin textures, showing significant promise applications in next-generation spintronic devices. However, chiral are still scarce, and their transport properties been rarely explored. Here, a magnet, Cr1/3NbS2, has synthesized, its magnetic systematically investigated. A high magnetoresistance sensitivity of 52.5%/T is achieved, phase diagram helimagnetic (CHM), soliton lattice (CSL), forced ferromagnetic (FFM)...
Regulating magnetism of a metal-organic framework (MOF) is highly desirable in magnetoelectric devices. Single-crystalline MOFs [(CH3)2NH2]2[FeIIIFe2-xIICoxII(HCOO)9] (x = 0, 0.2, 0.3, 0.6) with an unprecedented (412·63)1(49·66)2 topology were synthesized. These exhibit distinct antiferromagnetism, and the Néel temperature (TN) changes from 32.8 to 29.0 K increasing x. After field cooling above TN 2 K, these demonstrate giant exchange bias (EB) featured by significant vertical simultaneous...
Manipulation of exchange bias (EB) via spin-current-induced spin–orbit torque (SOT) is great importance in developing full electric control spintronic devices. Here, we report on SOT-dominant manipulation the interfacial antiferromagnetic spins and related perpendicular EB (PEB) IrMn/Co1-xTbx (CoTb) bilayers with various Tb contents. No matter magnetization ferrimagnetic CoTb layer Co-dominant or Tb-dominant; all samples were perpendicularly magnetized, spontaneous PEB could be established...
Spin–orbit torque (SOT)-induced magnetization switching in ferrimagnetic materials is promising for application a new generation of information storage devices. Here, we demonstrate SOT-induced field-free the perpendicularly magnetized CoTb ferrimagnet layer IrMn/CoTb bilayer, which in-plane magnetic inversion symmetry broken by spontaneous exchange bias (IEB) established isothermal crystallization IrMn layer. We obtain significant SOT effective field acting on and large spin Hall angle this...
Herein, an intriguing exchange bias (EB) effect manifesting itself from positive to negative with increase in the cooling field (HFC) is reported single crystal of Mn-doped metal–organic framework (MOF) [NH2(CH3)2][FeIIIFeII(HCOO)6] (1) by finely tuning interactions between magnetic ions. Note that doping ratio Mn relative total metal ions about 15%. Negative magnetization and EB below compensation temperature were both observed 1, (HE) changes its sign when HFC larger than ∼10 kOe. The...
The aim of voltage control magnetism is to reduce the power consumption spintronic devices. For a spin valve, relative magnetic orientation for two ferromagnetic layers key factor determining giant magnetoresistance (GMR) ratio. However, achieving full manipulation magnetization directions between parallel and antiparallel states significant challenge. Here, we demonstrate that by utilizing exchange-biased Co/IrMn bilayers with opposite pinning interlayer coupling Co layers, alignment valve...