This letter addresses the transient current distribution in multichip half-bridge power modules, where two types of paralleling connections with different commutation mechanisms are considered: dies and half-bridges. It reveals that dies, both high-side low-side paralleled devices experience a similar imbalance due to mismatched stray inductance. However, half-bridges same inductances, have much smaller imbalance, cause which is found be process. Theoretical analysis based on circuit...

ADVERTISEMENT RETURN TO ISSUEPREVArticleNEXTFeynman path integral approach for studying intramolecular effects in proton-transfer reactionsDaohui Li and Gregory A. VothCite this: J. Phys. Chem. 1991, 95, 25, 10425–10431Publication Date (Print):December 1, 1991Publication History Published online1 May 2002Published inissue 1 December 1991https://doi.org/10.1021/j100178a033Request reuse permissionsArticle Views270Altmetric-Citations101LEARN ABOUT THESE METRICSArticle Views are the...

A type of 3.3-kV/450-A half-bridge insulated-gate bipolar transistor power module combining the silicon (Si) and carbide (SiC) technologies has been developed reported in this article, for miniaturization Chinese high-speed railway rolling stock traction inverters. This is by integrating next-generation industrial standard high-voltage packaging topology state-of-the-art 3.3 kV wide bandgap semiconductor chip technology, to reduce waste dissipation during operation, which turn can lead...

Quantum mechanical studies of a lithium impurity in solid para-hydrogen and ortho-deuterium have been performed using the path integral formulation statistical mechanics. Since an isolated atom is much larger than host molecules, trapping sites consisting from one to six vacancies investigated. Interestingly, all are comparable energy. This due large compressibility solids, which permits lattice relax comfortably accommodate impurity. The inhomogeneously broadened dipole spectrum various was...

A pseudospark (PS)-sourced electron beam of 3-mm diameter has been experimentally investigated. Emission X-rays was detected during a PS discharge and clear X-ray images were formed using the PS-sourced impacting on 0.1-mm-thick molybdenum target at an applied voltage 46 kV. Using phosphor-coated scintillator, beam's cross-sectional profile surrounding ion channel also observed. These results confirm presence beam.

With the superior electrical and thermal properties of wide band gap materials, Silicon Carbide (SiC) devices are capable working at high power density, temperature, frequency, voltage efficiency. Although substantial investigation on SiC material, device packaging technologies have been done, there a series problems needed to be solved, such as material quality, cost for density temperature. In this work, status trend addressed. A brief review hybrid full module in terms market prospect,...

We present in this paper an advanced electromagnetic (EM)-electrothermal analysis approach for the semiconductor power devices, with illustration on insulated-gate bipolar transistor (IGBT) modules. This method distinguishes itself by dynamically integrating EM domain into circuit-type electrothermal coupling analysis, thus enabling multi-dimensional simulation that spans time from nanoseconds to seconds, and space chip level system level. In particular, it contains a parametric-extracted...

A state-of-the-art 3.3-kV/450-A hybrid power module for the next generation traction inverter of rolling stock is reported in this paper, combining silicon (Si) insulated-gate bipolar transistor (IGBT) and carbide Schottky barrier diodes (SBDs) chips. Compared with existing technology at same voltage level, characterized by a half-bridge topology, which 6 IGBT 12 SBD chips are integrated each switch. The outnumbering represents promising mitigation to low availability SBDs level. Both static...

When calculating free energy differences between two molecular systems by means of dynamics simulation, accessory potential functions can help eliminate uninteresting configurational entropy contributions, improve convergence, and facilitate reversibility. In this work, we demonstrate that the use a harmonic function to restrain key portions system in perturbation dual-topology approach dramatically improves convergence precision calculation. Limitations technique are illustrated, its...

Aging monitoring for insulated gate bipolar transistors (IGBTs) plays an important role in reliability assessment and lifetime prediction of the power converters. Extracting aging information online as well decoupling influence junction temperature is major challenges. In this paper, peak voltage across parasitic inductance between Kelvin emitter turn-off transient proposed a real-time condition indicator. The monotonic dependence induced investigated verified by experimental results from...

A variational Einstein model for describing low temperature solids is developed from a Feynman path integral perspective. The theory can be used to predict fully quantum mechanical values the thermodynamics (e.g., free energy, entropy, internal etc.) and equilibrium structure pair angular correlation functions) of solid. has also been generalized treat which contain impurity species. independent harmonic oscillator assumption implicit in allows results cast straightforward analytic form....

With the fast development of Terahertz (THz) related technologies, more and applications, such as high bandwidth communications, radar, secure detection, which require higher power, reliable THz radiation sources. There are different approaches to generate radiation. In this paper, we mainly focus on vacuum electronic technology, has potential provide a sufficient power facilitate wide range applications.

The linewidth of the electron spin resonance (ESR) spectra for H impurities trapped in solid para-hydrogen is calculated. equation linewidth, which was originally formulated F-center problems, modified to take account changes molecular hydrogen electronic orbitals, as well vibrations and rotations H2 molecules. By virtue constant pressure path integral Monte Carlo simulations, it found that zero point make so compressible cannot sustain local stress created by interstitial impurities. As a...

High power Insulated Gate Bipolar Transistor (IGBT) modules have been utilised in electronics industrial applications, such as electrical vehicle, traction, renewable energy, et al. The module with higher density, voltage and current rating, switching frequency, operation temperature much lower/higher storage lower cost is the development tendency driven by highly competeting market. standard 3.3kV/1500A single switch IGBT 190mm×140mm footprint has re-designed using latest multiphysics...

A new type of novel high voltage IGBT module package with a 140mm×100mm footprint half-bridge has been developed. The aims to provide the market power density, reliability standardised package. is scalable and suitable for multi-module parallel connection without degradation, low inductance design both internal structure external connection, balanced current distribution at substrate level level, etal. At sample build stage, types electromagnetic (EM), electrical circuitry, thermal,...

In this paper, an optically controlled millimeter-wave frequency selective surface using high resistivity silicon as tunable substrate is designed and tested. It shown from measured results, the transmission performance of FSS at resonant tuned -1.02dB to -16dB by light illumination. The photoconductive characteristic in millimeter wave region studied. results that insertion loss 110GHz 0.0005dB without However, its coefficient decreases -25dB -45dB 320GHz under 500mW IR

Active Frequency Selective Surface (FSS) with tunable response has been the focus of many researches. In this work, a new optically controlled approach which exploits variable dielectric property organic semiconductor under optical illumination is studied. P3HT and PTAA are two potential polymers properties investigated in work. The responses different freestanding FSS simulated.

A plasma-filled diode can be taken as a simplified model for the interaction space of some microwave oscillators, such as, virtual cathode oscillators. magnetic field has played an important role in showing nonlinear dynamics previous study. In presence field, is connected to various types loads consisting capacitance, inductance, and resistance series. The chaos have been investigated by using both analytical analysis particle-in-cell simulation. It shown that operate different dynamical...

The Compact Antenna Test Range (CATR), which generates a pseudo-plane wave in very short distance, is commonly employed to measure electrically large aperture antennas for the applications space remote sensing and radio astronomy. With increasing operating frequencies, design of CATR becomes technical challenge. This paper presents designs two tri-reflector CATRs at 200 GHz: Cassegrain-Gregorian (CG) configuration Double Gregorian (DG) one, through dynamic ray-tracing approach. Both utilise...

Mechanical failures of wedge bonded aluminium wire interconnects are identified as a failure mode in power electronics modules and these wirebonds often encapsulated variety insulating media to improve electrical isolation lifetime. Thermal/mechanical simulations have the effects encapsulating on stress induced during thermal load application shown that choice media, well method application, greatly affect under load.

140mm×190mm×38mm dimension single-switch high voltage insulated-gate bipolar transistor (IGBT) modules have been widely used in traction, converters as a standard package. The internal structural design and assembly processes always optimized to achieve lower parasitic inductance of the busbars, better thermal/mechanical characteristics substrate whole module. In this paper, 3D modelling technologies utilised for electrical, electromagnetic, thermal, mechanical (multiphysics) aspects speed...

The nonlinear interaction process between the electrons and immobile ions in a plasma-filled diode has been studied via two different approaches: (1) solving coupled analytical integral equations (2) simulating system by running particle-in-cell code PDP1 (plasma devices planar 1D). investigations have extended analysis to case where effect of magnetic field is considered diode. can still operate four distinct dynamical regimes - steady, oscillatory, chaotic, unstable if relatively weak...