We report advances in nanoimprint lithography, its application nanogap metal contacts, and related fabrication yield. have demonstrated 5nm linewidth 14nm linepitch resist using lithography at room temperature with a pressure less than 15psi. fabricated gold contacts (for the of single macromolecule devices) separation by lift-off metal. Finally, uniformity manufacturability over 4in. wafer were demonstrated.

We demonstrate thin-film metamaterials with resonances in the mid-infrared wavelength range. Our structures are numerically modeled and experimentally characterized by reflection angularly-resolved thermal emission spectroscopy. strong controllable absorption across In addition, polarized from these samples is shown to be highly selective largely independent of angles normal 45 degrees. Experimental results compared numerical models excellent agreement. Such hold promise for large-area,...

The field of plasmonics has the potential to enable unique applications in mid-infrared (IR) wavelength range. However, as is case regardless wavelength, choice plasmonic material significant implications for ultimate utility any device or structure. In this manuscript, we review wide range available and phononic materials mid-IR wavelengths, looking particular at transition metal nitrides, transparent conducting oxides, silicides, doped semiconductors, even newer such graphene. We also...

Abstract Here, we review the progress and most recent advances in phonon-polaritonics, an emerging growing field that has brought about a range of powerful possibilities for mid- to far-infrared (IR) light. These extraordinary capabilities are enabled by resonant coupling between impinging light vibrations material lattice, known as phonon-polaritons (PhPs). PhPs yield characteristic optical response certain materials, occurring within IR spectral window reststrahlen band. In particular,...

We demonstrate the potential of highly-doped semiconductor epilayers as building blocks for mid-infrared plasmonic structures. InAs are grown by molecular beam epitaxy and characterized Hall measurements optical techniques. show that plasma frequency our material can be controlled across a broad range frequencies. Subwavelength disks fabricated out material, localized resonances observed from these Experimental results compared to both numerical simulations simple quasistatic dipole model...

Abstract Surface plasmon polaritons and their localized counterparts, surface plasmons, are widely used at visible near-infrared (near-IR) frequencies to confine, enhance, manipulate light on the subwavelength scale. At these frequencies, plasmons serve as enabling mechanisms for future on-chip communications architectures, high-performance sensors, high-resolution imaging lithography systems. Successful implementation of plasmonics-inspired solutions longer wavelengths, in mid-infrared...

We present a comprehensive study of enhanced light funneling through subwavelength aperture with realistic (lossy) epsilon-near-zero (ENZ) materials. realize experimentally an inclusion-free ENZ material layer operating at optical frequencies and characterize its performance. An analytical expression describing several structures involving coupling layers is developed, validated numerical solutions Maxwell equations, utilized to relate the performance systems their main limiting factor, losses.

Infrared absorption spectroscopy of vibro-rotational molecular resonances provides a powerful method for investigation wide range molecules and compounds. However, the wavelength light required to excite these is often orders magnitude larger than cross sections under investigation. This mismatch makes infrared detection identification nanoscale volumes material challenging. Here we demonstrate new type plasmonic antenna long-wavelength enhanced sensing. The materials utilized are...

Collective plasmon resonances in superlattice assemblies of metallic nanoparticles are influenced by nanoparticle attributes and assembly structure. Although grain boundaries other structural defects inherent to superlattices assembled the laboratory, their impact on near- far-field optical properties remains poorly understood. Here, we study variations model two-dimensional spherical nanoparticles, focusing large-scale monolayers approximately constant area fraction formed different rates....

Plasmon polaritons created by coupling optical cavity modes with plasmonic resonances offer widely tunable frequencies and strong light-matter interaction. While metallic nanocrystals (NCs) are compelling building blocks, existing approaches for their photonic integration not scalable, limiting systematic study potential applications. Here, we assemble colloidal tin-doped indium oxide NCs in a straightforward Salisbury screen configuration to realize an 'open' structure, where the infrared...

A key issue in nanoimprint lithography (NIL) is determining the ultimate pitch resolution achievable for various pattern shapes and their critical dimensional control. To this end, we demonstrated fabrication of 6 nm half-pitch gratings 0.04 µm2 cell area SRAM metal interconnects with 20 line resist by NIL. The mould grating was fabricated cleaving a GaAs /Al0.7Ga0.3As superlattice grown on molecular beam epitaxy, selectively etching away Al0.7Ga0.3As layers dilute hydrofluoric acid. silicon...

We demonstrate strong-to-perfect absorption across a wide range of mid-infrared wavelengths (5-12µm) using two-layer system consisting heavily-doped silicon and thin high-index germanium dielectric layer. spectral control the resonance by varying thickness The is shown to be largely polarization-independent angle-invariant. Upon heating, we observe selective thermal emission from our materials. Experimental data compared an analytical model structures with strong agreement.

In this work, the authors demonstrate potential of epitaxially grown highly doped InSb as an engineered, wavelength-flexible mid-IR plasmonic material. The achieve doping concentrations over order magnitude larger than previously published results and show that such materials have plasma frequencies corresponding to energies material's band-gap. These semiconductor-based metals open door homoepitaxial integration or epsilon-near-zero with optoelectronic devices at mid-infrared wavelengths....

We present a review of existing and potential next-generation far-infrared (20-60 μm) optical materials devices. The is currently one the few remaining frontiers on spectrum, space underdeveloped lacking in many optoelectronic devices taken for granted other, more technologically mature wavelength ranges. challenges associated with developing materials, structures, at these wavelengths are part result strong phonon absorption Reststrahlen bands III-V semiconductors that collectively span...

The long free-space wavelengths associated with the mid- to far-infrared spectral range impose significant limitations on form factor of optic and electro-optic components. Specifically, current commercial optical sources, waveguides, components (lenses waveplates), detector elements are larger than corresponding diffraction limit, resulting in reduced image resolution bulky systems, deleterious effects for a number imaging sensing applications interest commercial, medical, defense related...

We demonstrate all-epitaxial guided-mode resonance mid-wave infrared (MWIR) type-II superlattice nBn photodetectors. Our detectors consist of a high-index absorber/waveguide layer grown above heavily doped ( n + +), and thus, low-index, semiconductor layer, below wide-bandgap grating-patterned layer. Polarization- angle-dependent detector response is measured experimentally simulated numerically, showing strongly enhanced absorption, compared to unpatterned detectors, at wavelengths...

The ability to efficiently absorb light in ultrathin (subwavelength) layers is essential for modern electro-optic devices, including detectors, sensors, and nonlinear modulators. Tailoring these films' spectral, spatial, polarimetric properties highly desirable many, if not all, of the above applications. Doing so, however, often requires costly lithographic techniques or exotic materials, limiting scalability. Here we propose, demonstrate, analyze a mid-infrared absorber architecture...

We report on room-temperature continuous-wave (CW) operation of /spl lambda//spl sim/8.2 μm quantum cascade lasers grown by metal-organic chemical vapor deposition without lateral regrowth. The have been processed as double-channel ridge waveguides with thick electroplated gold. CW output power 5.3 mW is measured at 300 K a threshold current density 2.63 kA/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . gain room temperature close...

We demonstrate strong coupling between a mid-infrared perfect absorber and molecular absorption resonance embedded in our structure. Anti-crossing behavior is demonstrated as the tuned through line, both experimentally numerically, described analytically using simple coupled harmonic oscillator model. Excellent agreement experimental, numerical, analytical results are shown. Such devices offer potential for sensing systems actively tunable devices.

In the United States, patient usage of costly emergency departments (EDs) has been portrayed as a major factor contributing to health care expenditures. The homeless are associated with ED frequent users, population often blamed for inappropriate use. This study examined characteristics and costs users. A retrospective cross-sectional review hospital records visits in 2006 at an urban academic medical center was performed. Frequent users were defined having greater than 4 one year. Homeless...

One-dimensional crystal growth allows the epitaxial integration of compound semiconductors on silicon (Si), as large lattice-mismatch strain arising from heterointerfaces can be laterally relieved. Here, we report direct heteroepitaxial a mixed anion ternary InAsyP1–y nanowire array across an entire 2 in. Si wafer with unprecedented spatial, structural, and special uniformity dramatic improvements in aspect ratio (>100) area density (>5 × 108/cm2). Heterojunction solar cells consisting...

We demonstrate the excitation of localized surface phonon polaritons in an array sub-diffraction pucks fabricated epitaxial layer gallium nitride (GaN) on a silicon carbide (SiC) substrate. The is characterized via polarization- and angle-dependent reflection spectroscopy mid-infrared, coupling to several modes observed GaN Reststrahlen band (13.4–18.0 μm). same structure simulated using finite element methods charge density are studied; transverse dipole identified for electric magnetic...