A5016217504- Ferroelectric and Piezoelectric Materials
- Multiferroics and related materials
- Acoustic Wave Resonator Technologies
- Microwave Dielectric Ceramics Synthesis
- Dielectric properties of ceramics
- Metal-Organic Frameworks: Synthesis and Applications
- Photorefractive and Nonlinear Optics
- Solid State Laser Technologies
- Luminescence Properties of Advanced Materials
- Magnetism in coordination complexes
- Metal complexes synthesis and properties
- Polyoxometalates: Synthesis and Applications
- Advanced Photocatalysis Techniques
- Lanthanide and Transition Metal Complexes
- ZnO doping and properties
- Gas Sensing Nanomaterials and Sensors
- TiO2 Photocatalysis and Solar Cells
- Crystallization and Solubility Studies
- Optical and Acousto-Optic Technologies
- X-ray Diffraction in Crystallography
- Autonomous Vehicle Technology and Safety
- Laser Design and Applications
- Ga2O3 and related materials
- Synthesis and biological activity
- Pulsed Power Technology Applications
State Ethnic Affairs Commission
2023
Southwest Minzu University
2023
Vision Technology (United States)
2023
University of Coimbra
2010-2018
University of Aveiro
2008-2018
Chinese Academy of Sciences
2001-2013
International Centre for Materials Physics
2008-2013
Nuctech (China)
2013
Fudan University
2004-2012
Collaborative Innovation Center of Advanced Microstructures
2004-2008
We demonstrate a 968 nm diode end-pumped Er,Pr:GYSGG (Gd 1.17 Y 1.83 Sc 2 Ga 3 O 12 ) laser at 2.79 μm operated in the pulse and continuous-wave (CW) modes.The lifetimes for upper level 4 I 11/2 lower 13/2 are 0.52 0.60 ms, respectively.The produces 284 mW of power CW mode, corresponding to optical-to-optical efficiency 14.8% slope 17.4%.The maximum energy achieved is 2.4 mJ repetition rate 50 Hz duration 0.5 peak 4.8 W 18.3%.These results suggest that doping deactivator Pr 3+ ions can...
We demonstrate a diode end-pumped Yb, Er, Ho:Gd(1.17)Y(1.83)Sc(2)Ga(3)O(12) (GYSGG) laser operated at 2.79 μm in continuous-wave mode. Spectral analysis shows that Yb(3+) and Ho(3+) act as sensitizer deactivator ions, respectively. Pumping with 967 nm produces the maximum output power of 411 mW, corresponding to optical-optical conversion slope efficiencies 11.6% 13.1%, The minimum threshold is only 81 mW because doping. properties are slightly influenced by 100 mrad gamma irradiation....
Er3+-doped and Yb3+/Er3+ co-doped Gd3Sc2Ga3O12 (abbreviated as Er:GSGG Yb,Er:GSGG, respectively) laser crystals are investigated by using a combination of spectroscopic measurements thermal characterizations. An absorption peak Yb,Er:GSGG crystal shifts to 970 nm its band broadens obviously, which makes the suitable for pumping diode (LD). This also exhibits shorter lifetime lower level, larger emission cross section higher conductivity than those Er:GSGG. All these factors suggest that...
1School of Physics and Optoelectronic Engineering, Nanjing University Information Science & Technology, 210044, China 2Department Electronics, North Maharashtra University, Jalgaon, 425001, India 3School Chemistry Chemical 210094, 4Department Physics, Faculty Technology (FCT), Coimbra (UC), Rua Larga, 3004-516 Coimbra, Portugal
$C$-band low-energy electron linear accelerators are preferable for applications which require compact structure and accurate positioning. During the past two years, accelerator laboratory of Tsinghua University has developed a 6 MeV standing-wave biperiodic on-axis coupled accelerator. The weight is 7.4 kg length about 39 cm, includes thermal-cathode gun flange tests. High capture ratio, narrow energy spectrum, small spot size have been achieved in high power rf test, shows good performance...
Dielectric/ferroelectric properties of morphotropic phase boundary 0.37BiScO3–0.63PbTiO3 thin films with a PbTiO3 seed layer deposited on platinized silicon substrates by sol-gel are examined. Room temperature dielectric constant >1600 and loss 0.02 achieved (100Hz). A well-defined hysteresis loop was observed Pr ∼23μC∕cm2. In particular, the remarkable low Ec ∼33kV∕cm these adds value to potential application BiScO3–PbTiO3 in high ferroelectric memories. The influence electric...
We investigate the influence of gamma-ray irradiation on absorption and fluorescent spectra Nd3+:Y3A15O12 (Nd:YAG) Yb3+:Y3A15O12 (Yb:YAG) crystals grown by Czochralski method. Two additional (AA) bands induced appear at 255nm 340 nm. The former is contributed due to Fe3+ impurity, latter Fe2+ ions F-type colour centres. intensity excitation emission as well lifetime Nd:YAG crystal decrease after 100Mrad In contrast, same dose does not impair properties Yb:YAG crystal. These results indicate...
The characterization of sol–gel derived morphotropic phase boundary (MPB) 0.37BiScO3–0.63PbTiO3 (BSPT) thin films, deposited on IrO2/TiO2/SiO2/Si and Pt/TiO2/SiO2/Si substrates, was performed to identify the influence IrO2electrodes film's microstructure electrical properties. Though ferroelectric behaviour both films is similar, with remanent polarization values 26 µC cm−2 23 cm−2, respectively, for IrO2 Pt bottom electroded leakage current density (JL) at room temperature markedly...
Functional oxide thin films integrated into complementary metal semiconductor technology often exhibit degraded properties with respect to bulk materials because of complex interfacial phenomena. In this contribution, we demonstrate that a sol–gel LaNiO3 (LNO) interlayer deposited onto the surface Pt/TiO2/SiO2/Si substrate prior growth BiScO3–PbTiO3 (BSPT) acts: (i) seed nucleation perovskite structured; (ii) template give controlled orientation and enhanced crystallinity; (iii) as sink for...
The voltage tunability of Pb(Fe1/2Nb1/2)1–xTixO3 single crystals is investigated at a low electric field (< 130 V/cm) in frequency range 1 MHz). results show that the capacitance strongly suppressed by applied dc biases for both rhombohedral sample and tetragonal sample. A negative only detected origin giant discussed based on multipolarization-mechanism model equivalent circuit model, respectively. It ascribed to interfacial polarization interface electrode/sample.