A5061455583- Semiconductor Quantum Structures and Devices
- Nanowire Synthesis and Applications
- Advanced Semiconductor Detectors and Materials
- Photonic and Optical Devices
- Software Engineering Research
University of Basrah
2022
Lancaster University
2017
Abstract The control of optical and transport properties semiconductor heterostructures is crucial for engineering new nanoscale photonic electrical devices with diverse functions. Core–shell nanowires are evident examples how tailoring the structure, i.e., shell layer, plays a key role in device performance. However, III–V semiconductors bandgap tuning has not yet been fully explored nanowires. Here, novel InAs/AlSb core–shell nanowire heterostructure reported grown by molecular beam...
InAsSb nanowires (NWs) with a high Sb content have potential in the fabrication of advanced silicon-based optoelectronics such as infrared photondetectors/emitters and highly sensitive phototransistors, well generation renewable electricity. However, producing optically efficient NWs remains challenge, optical emission is limited to 4.0 μm due quality nanowires. Here, we report, for first time, success high-quality enabling operating entirely mid-wavelength infrared. Pure zinc-blende were...
Photoluminescence (PL) as a conventional yet powerful optical spectroscopy may provide crucial insight into the mechanism of carrier recombination and bandedge structure in semiconductors. In this study, mid-infrared PL measurements on vertically aligned InAs nanowires (NWs) are realized for first time wide temperature range up to 290 K, by which radiative recombinations clarified NWs grown n- p-type Si substrates, respectively. A dominant feature is identified be from type-II transition...
Internal quantum efficiency (IQE) is an important figure of merit for photoelectric applications. While the InAs core/shell (c/s) nanowire (NW) a promising solution efficient emission, relationship between IQE and shell coating remains unclear. This Letter reports mid-infrared PL measurements on InAs/InGaAs, InAs/AlSb, InAs/GaSb c/s NWs, together with bare NWs as reference. Analyses show that depressed by at 9 K but gets improved up to approximately 50% InGaAs 40 -140 20% beyond 110 AlSb...
This publisher's note contains corrections to Opt. Lett.47, 5208 (2022)10.1364/OL.473154.