A5003208201- 2D Materials and Applications
- Nanowire Synthesis and Applications
- Graphene research and applications
- MXene and MAX Phase Materials
- Gas Sensing Nanomaterials and Sensors
- Carbon Nanotubes in Composites
- Chalcogenide Semiconductor Thin Films
- Ga2O3 and related materials
- Perovskite Materials and Applications
- Advanced Memory and Neural Computing
- Electronic and Structural Properties of Oxides
- Semiconductor Quantum Structures and Devices
- Advanced Sensor and Energy Harvesting Materials
- Thermal Radiation and Cooling Technologies
- Surface and Thin Film Phenomena
- Quantum Dots Synthesis And Properties
- Photoreceptor and optogenetics research
- Synthesis and properties of polymers
- Electron and X-Ray Spectroscopy Techniques
- Advanced Semiconductor Detectors and Materials
- GaN-based semiconductor devices and materials
- Advanced MEMS and NEMS Technologies
- Advanced Optical Sensing Technologies
- Superconducting and THz Device Technology
- Energy Harvesting in Wireless Networks
Shanghai Institute of Technical Physics
2016-2019
University of Chinese Academy of Sciences
2016-2019
Northeastern University
2018
Chinese Academy of Sciences
2016-2017
University of Science and Technology of China
2016
CAS Key Laboratory of Urban Pollutant Conversion
2016
Abstract 2D material based photodetectors have attracted many research projects due to their unique structures and excellent electronic optoelectronic properties. These materials, including semimetallic graphene, semiconducting black phosphorus, transition metal dichalcogenides, insulating hexagonal boron nitride, various heterostructures, show a wide distribution in bandgap values. To date, hundreds of on materials been reported. Here, review covering the detection spectrum from ultraviolet...
Atomically thin 2D-layered transition-metal dichalcogenides have been studied extensively in recent years because of their intriguing physical properties and promising applications nanoelectronic devices. Among them, ReSe2 is an emerging material that exhibits a stable distorted 1T phase strong in-plane anisotropy due to its reduced crystal symmetry. Here, the anisotropic nature revealed by Raman spectroscopy under linearly polarized excitations which different vibration modes exhibit...
Highly sensitive photodetection even approaching the single-photon level is critical to many important applications. Graphene-based hybrid phototransistors are particularly promising for high-sensitivity because they have high photoconductive gain due mobility of graphene. Given their remarkable optoelectronic properties and solution-based processing, colloidal quantum dots (QDs) been preferentially used fabricate graphene-based phototransistors. However, resulting QD/graphene face challenge...
All-inorganic cesium lead halide perovskite (CsPbX3, X = Cl, Br, and I) nanocrystals (NCs) are emerging as an important class of semiconductor materials with superior photophysical properties wide potential applications in optoelectronic devices. So far, only a few studies have been conducted to control the shape geometry CsPbX3 NCs. Here we report general approach directly synthesize two-dimensional (2D) mixed nanosheets uniform ultrathin thicknesses down monolayers. The key high-yield...
An advanced visible/infrared dual-band photodetector with high-resolution imaging at room temperature is proposed and demonstrated for intelligent identification based on the 2D GaSe/GaSb vertical heterostructure. It resolves challenges of producing large-scale growth, achieving fast response speed, outstanding detectivity, lower manufacture cost, which are main obstacles industrialization 2D-materials-based photodetection.
Van der Waals heterostructures based on 2D layered materials have received wide attention for their multiple applications in optoelectronic devices, such as solar cells, light-emitting and photodiodes. In this work, high-performance photovoltaic photodetectors MoTe2 /MoS2 vertical heterojunctions are demonstrated by exfoliating-restacking approach. The fundamental electric properties band structures of the junction revealed analyzed. It is shown that kind can operate under zero bias with...
One-dimensional InAs nanowires (NWs) have been widely researched in recent years. Features of high mobility and narrow bandgap reveal its great potential optoelectronic applications. However, most reported work about NW-based photodetectors is limited to the visible waveband. Although some shows certain response for near-infrared light, problems large dark current small light on/off ratio are unsolved, thus significantly restricting detectivity. Here this work, a novel "visible...
One-dimensional semiconductor nanowires (NWs) have been widely applied in photodetector due to their excellent optoelectronic characteristics. However, intrinsic carrier concentration at certain level results appreciable dark current, which limits the detectivity of devices. Here, we fabricated a novel type ferroelectric-enhanced side-gated NW photodetectors. The carriers channel can be fully depleted by ultrahigh electrostatic field from polarization P(VDF-TrFE) ferroelectric polymer. In...
In recent years, 2D layered materials have been considered as promising photon absorption channel media for next‐generation phototransistors due to their atomic thickness, easily tailored single‐crystal van der Waals heterostructures, ultrafast optoelectronic characteristics, and broadband absorption. However, the photosensitivity obtained from such devices, even under a large bias voltage, is still unsatisfactory until now. this paper, high‐sensitivity based on WS 2 MoS are proposed,...
High-performance photodetectors operating over a broad wavelength range from ultraviolet, visible, to infrared are of scientific and technological importance for wide applications. Here, photodetector based on van der Waals heterostructures graphene its fluorine-functionalized derivative is presented. It consistently shows broadband photoresponse the ultraviolet (255 nm) mid-infrared (4.3 µm) wavelengths, with three orders magnitude enhanced responsivity compared pristine photodetectors. The...
An efficient ferroelectric‐enhanced side‐gated single CdS nanowire (NW) ultraviolet (UV) photodetector at room temperature is demonstrated. With the ultrahigh electrostatic field from polarization of ferroelectric polymer, depletion intrinsic carriers in NW channel achieved, which significantly reduces dark current and increases sensitivity UV even after gate voltage removed. Meanwhile, low frequency noise power device reaches as 4.6 × 10 −28 A 2 a source‐drain V ds = 1 V. The exhibits high...
Because of the distinct electronic properties and strong interaction with light, quasi-one-dimensional nanowires (NWs) semiconducting property have been demonstrated tremendous potential for various technological applications, especially electronics optoelectronics. However, until now, most state-of-the-art NW photodetectors are predominantly based on n-type channel. Here, we successfully synthesized p-type SnSe SnS NWs via chemical vapor deposition method fabricated high-performance single...
Artificial synapses/neurons based on electronic/ionic hybrid devices have attracted wide attention for brain-inspired neuromorphic systems since it is possible to overcome the von Neumann bottleneck of computing paradigm. Here, we report a novel photoneuromorphic device printed photogating single-walled carbon nanotube (SWCNT) thin film transistors (TFTs) using lightly n-doped Si as gate electrode. The drain currents SWCNT TFTs can gradually increase over 3000 times their starting value...
Abstract 2D materials including graphene, transition metal dichalcogenides, and phosphorene have been widely researched for electronic optoelectronic applications in recent years. Etching techniques controlling the layer number patterning shape of layered demonstrated to be a crucial part fabrication various functional devices. Six types etching used are discussed, mechanism, purpose, advantages each technique explored. In addition mature thin‐film semiconductors processing such as reactive...
Single-photon detectors that can resolve photon number play a key role in advanced quantum information technologies. Despite significant progress improving conventional photon-counting and developing novel device concepts, single-photon are capable of distinguishing incident at room temperature still very limited. We demonstrate room-temperature photon-number-resolving detector by integrating field-effect transistor configuration with core/shell-like nanowires. The shell serves as...
Abstract The control of optical and transport properties semiconductor heterostructures is crucial for engineering new nanoscale photonic electrical devices with diverse functions. Core–shell nanowires are evident examples how tailoring the structure, i.e., shell layer, plays a key role in device performance. However, III–V semiconductors bandgap tuning has not yet been fully explored nanowires. Here, novel InAs/AlSb core–shell nanowire heterostructure reported grown by molecular beam...
A vertical point heterostructure (VPH) is constructed by sandwiching a two-dimensional (2D) MoS2 flake with two cross-stacked metallic single-walled carbon nanotubes. It can be used as field-effect transistor high on/off ratio and light detector spatial resolution. Moreover, the hybrid 1D-2D-1D VPHs open up new possibilities for nanoelectronics nano-optoelectronics.
Abstract Semiconducting single‐walled carbon nanotubes (s‐SWNTs) are regarded as an important candidate for infrared (IR) optical detection due to their excellent intrinsic properties. However, the strong binding energy of excitons in s‐SWNTs seriously impedes development IR photodetector. This Communication reports photodetector with highly pure and γ‐graphdiyne. The heterojunctions between two materials can efficiently separate photogenerated excitons. In comparison device fabricated only...
We show that the performance of single-walled carbon nanotubes (SWCNTs) based infrared photodetector can be greatly enhanced through combination with colloidal PbS quantum dots (QDs). To improve photo-induced charge transport efficiency and carrier mobility, QDs are modified by short-chain inorganic. Under illumination, light-induced electron-hole pairs effectively separated internal electric field formed at interfaces between SWCNTS QDs, which will lead to increase both conductivities in...
Abstract Because of their cost‐effective synthesis and appropriate bandgap opening by various mechanisms, single‐walled carbon nanotubes (SWCNTs) exhibit significant promise for highly efficient near‐infrared photodetection. In this work, the first investigation manipulating electrode contact exciton effect is performed on photocurrent generation SWCNT transistors separately depositing Cr or Pd as symmetric source/drain electrodes. Two different photoconducting behaviors devices, namely...
Abstract Transition metal oxides (TMOs) with high work function (WF) show promising properties as unipolar p‐type contacts for transition dichalcogenides. Here, ambipolar field‐effect transistors (FETs) enabled by bilayer WSe 2 self‐assembled TMOs (WO 2.57 ) are reported. Systematic material characterizations demonstrate the formation of WO /WSe heterojunctions around nanoflake edges Se atoms substituted O after air‐exposure, while pristine almost sustain in inner domains. As‐fabricated FETs...
Free-standing nanoribbons of InAs quantum membranes (QMs) transferred onto a (Si/Mo) multilayer mirror substrate are characterized by hard x-ray photoemission spectroscopy (HXPS) and standing-wave HXPS (SW-HXPS). Information on the chemical composition states elements within was obtained quantitative depth profiles SW-HXPS. By comparing experimental SW-HXPS rocking curves to optical calculations, profile InAs(QM) its interfaces were quantitatively derived with ångström precision. We...