A5101911341- 2D Materials and Applications
- MXene and MAX Phase Materials
- Graphene research and applications
- Perovskite Materials and Applications
- Nanowire Synthesis and Applications
- Chalcogenide Semiconductor Thin Films
- Advanced Memory and Neural Computing
- Ga2O3 and related materials
- Human Pose and Action Recognition
- Gas Sensing Nanomaterials and Sensors
- Photonic and Optical Devices
- Thermal Radiation and Cooling Technologies
- Supercapacitor Materials and Fabrication
- Video Surveillance and Tracking Methods
- Physics of Superconductivity and Magnetism
- Neural Networks and Reservoir Computing
- Magnetic and transport properties of perovskites and related materials
- Structural Response to Dynamic Loads
- Transition Metal Oxide Nanomaterials
- Electrical and Thermal Properties of Materials
- Copper Interconnects and Reliability
- Carbon Nanotubes in Composites
- Gait Recognition and Analysis
- Topological Materials and Phenomena
- Advanced Semiconductor Detectors and Materials
Nanning Normal University
2024-2025
Hefei University of Technology
2025
Shanghai Institute of Technical Physics
2019-2022
University of Chinese Academy of Sciences
2019-2021
State Key Laboratory of Transducer Technology
2020
Chinese Academy of Sciences
2020
Institute of High Performance Computing
2007
Institute of Atomic and Molecular Sciences, Academia Sinica
1990
Low-dimensional Te-based photodetectors exhibit blackbody response and achieve record-set performance metrics.
With the increasing demand for multispectral information acquisition, infrared imaging technology that is inexpensive and can be miniaturized integrated into other devices has received extensive attention. However, widespread usage of such photodetectors still limited by high cost epitaxial semiconductors complex cryogenic cooling systems. Here, we demonstrate a noncooled two-color photodetector provide temporal-spatial coexisting spectral blackbody detection at both near-infrared...
p -type conduction has been observed in unintentional carbon-doped ZnO thin films grown by metal organic chemical vapor deposition through postgrowth annealing treatment. The existence of carbon, which verified secondary ion mass spectrometry and x-ray photoelectron spectroscopy, was predicted to immobilize the oxygen interstitial site after annealing. Using first principles calculations, formation carbon-oxygen cluster defect found be favorable acts as a shallow acceptor. cryogenic...
Uncooled infrared photodetectors have evoked widespread interest in basic research and military manufacturing because of their low-cost, compact detection systems. However, existing uncooled utilize the photothermoelectric effect radiation operating at 8-12 µm, with a slow response time millisecond range. Hence, exploration new mid-wavelength (MWIR) heterostructures is conducive to development ultrafast high-performance nano-optoelectronics. This study explores van der Waals heterojunction...
Abstract 2D layered materials are an emerging class of low‐dimensional with unique physical and structural properties extensive applications from novel nanoelectronics to multifunctional optoelectronics. However, the widely investigated strongly limited in high‐performance electronics ultrabroadband photodetectors by their intrinsic weaknesses. Exploring new narrow bandgap is very imminent fundamental. A narrow‐bandgap noble metal dichalcogenide (PtS 2 ) demonstrated this study. The...
Abstract Low‐symmetry 2D materials with unique anisotropic optical and optoelectronic characteristics have attracted a lot of interest in fundamental research manufacturing novel devices. Exploring new low‐symmetry narrow‐bandgap will be rewarding for the development nanoelectronics nano‐optoelectronics. Herein, sulfide niobium (NbS 3 ), transition metal trichalcogenide semiconductor structure, is introduced into narrowband material strong physical properties both experimentally...
Abstract For each generation of semiconductors, the issue doping techniques is always placed at top priority list since it determines whether a material can be used in electronic and optoelectronic industry or not. When comes to 2D materials, significant challenges have been found controllably semiconductors into p‐ n‐type, let alone developing continuous control this process. Here, unique self‐modulated characteristic layered materials such as PtSSe, PtS 0.8 Se 1.2 , PdSe 2 WSe reported....
Abstract Machine vision systems (MVSs) are an important component of intelligent systems, such as autonomous vehicles and robots. However, with the continuous increase in data new application scenarios, requirements put forward for next generation MVS. There is urgent need to find material complement existing semiconductor technology based on thin‐film materials, architectures must be explored improve efficiency. Because their unique physical properties, two‐dimensional (2D) materials have...
Emerging low-dimensional materials exhibit the potential in realizing next-generation room-temperature blackbody-sensitive infrared detectors. As a narrow band gap semiconductor, tellurium (Te) has been focus of detector research attention because its high hole mobility, large absorptivity, and environmental stability. However, it is still challenge to fabricate Te-based detectors with low dark current fast speed. In this work, heterojunction device based on Te graphene constructed,...
Abstract Broadband light detection is crucial for a variety of optoelectronic applications in modern society. As an important‐near infrared (NIR) photodetector, InGaAs PIN photodiodes demonstrate high performance. However, they have limited response range because optical absorption by the window layer or substrate. To exploit broadband capability narrow‐bandgap InGaAs, phototransistor based on hybrid InGaAs‐SiO 2 ‐graphene heterostructure presented. In this system, graphene serves as...
2D materials, of which the carrier type and concentration are easily tuned, show tremendous superiority in electronic optoelectronic applications. However, achievements still quite far away from practical Much more effort should be made to further improve their performance. Here, p-type MoSe2 is successfully achieved via substitutional doping Ta atoms, confirmed experimentally theoretically, outstanding homojunction photodetectors inverters fabricated. p-n device with a low reverse current...
Abstract 2D layered photodetectors have been widely researched for intriguing optoelectronic properties but their application fields are limited by the bandgap. Extending detection waveband can significantly enrich functionalities and applications of photodetectors. For example, after breaking through bandgap limitation, extrinsic Si used short‐wavelength infrared or even long‐wavelength detection. Utilizing photoconduction to extend is attractive desirable. However, has yet not observed in...
For the purpose of achieving accurate skeleton-based action recognition, majority prior approaches have adopted a serial strategy that combines Graph Convolutional Networks (GCNs) with attention-based methods. However, this approach frequently treats human skeleton as an isolated and complete structure, neglecting significance highly correlated yet indirectly connected skeletal parts, finally hindering recognition accuracy. This study proposes novel architecture addressing limitation by...
Flexible supercapacitors with excellent electrochemical performance and flexible portability have a wide range of application scenarios development potential. The asymmetric is more stable than that conventional supercapacitors. A quasi-solid Zn-MnO2 supercapacitor reported in this paper. High surface area spinel ZnMn2O4 (ZMO) was prepared by rapid reaction ternary deep eutectic solvent potassium permanganate, then ZMO different Ni doping ratio hydrothermal reaction. ZMO/CC growing on carbon...
In modern electronics and optoelectronics, hot electron behaviors are highly concerned, as they determine the performance limit of a device or system, like associated thermal power constraint chips Shockley-Queisser for solar cell efficiency. To date, however, manipulation electrons has been mostly based on conceptual interpretations rather than direct observation. The problem arises from fundamental fact that energy-differential mixed up in real-space, making it hard to distinguish them...
Abstract Infrared photodetectors are widely used in the field of remote sensing, communications, biomedical imaging, etc. Most photodetection based on 2D transition‐metal dichalcogenides (TMDs) is limited to visible (Vis) near‐infrared (NIR) due large intrinsic bandgaps (≈1.2–2 eV). Here, a bandgap engineering HfS 2 by tellurium (Te)‐replacement strategy obtained via chemical vapor transport method. The values 2(1− x ) Te decrease from 1.7 0.88 eV with composition changing 0 0.095. Few‐layer...
Abstract Because of their cost‐effective synthesis and appropriate bandgap opening by various mechanisms, single‐walled carbon nanotubes (SWCNTs) exhibit significant promise for highly efficient near‐infrared photodetection. In this work, the first investigation manipulating electrode contact exciton effect is performed on photocurrent generation SWCNT transistors separately depositing Cr or Pd as symmetric source/drain electrodes. Two different photoconducting behaviors devices, namely...
Broadband infrared photodetectors based on two-dimensional (2D) materials which are the research focus in field, have wide applications remote sensing, thermal imaging, and astronomy observation. In this article, photodetector 2D ferromagnetic material CoSe is studied at room temperature, demonstrating air-stable, broadband, up to long wavelength properties. The applied for first time. synthesized by using chemical vapor deposition method. size of as-grown 71.8 μm. photoresponse ranges from...
A synaptic transistor with a single input terminal can mimick important high neural activities by modulating optical and electrical stimulations.
Intelligent systems have brought convenience to contemporary society. However, latency and poor-efficiency been urgent problems for intelligence systems. Here, an infrared (IR) intelligent system fusing a non-contact IR thermopile sensor array fabricated by microelectromechanical technology artificial neural network (ANN) algorithm is proposed, with the characteristics of high-efficiency low-latency. The based on designed near-sensor computing architecture, which can realize directly edge...
The cover shows the extrinsic photoconduction induced Ge-based polarization-sensitive photodetector. structure of photodetector is shown in upper left corner. amplified crystal GeSe with several Ge vacancies middle. Additionally, image excess carriers being excited by a polarized light lower right In article number 2006765, Qing Li, Zhongming Wei, Weida Hu, and co-workers investigate effect 2D materials for first time provide strategy to broaden detection waveband photodetectors.