A5100776490- Crystallization and Solubility Studies
- X-ray Diffraction in Crystallography
- 2D Materials and Applications
- Perovskite Materials and Applications
- MXene and MAX Phase Materials
- Catalytic Processes in Materials Science
- Ga2O3 and related materials
- Graphene research and applications
- Catalysis and Oxidation Reactions
- Advanced oxidation water treatment
- Gas Sensing Nanomaterials and Sensors
- Catalysis and Hydrodesulfurization Studies
- Pulsed Power Technology Applications
- Nanowire Synthesis and Applications
- Nanomaterials for catalytic reactions
- Gyrotron and Vacuum Electronics Research
- GaN-based semiconductor devices and materials
- Silicon Carbide Semiconductor Technologies
- Porphyrin and Phthalocyanine Chemistry
- Environmental remediation with nanomaterials
- Thin-Film Transistor Technologies
- Luminescence Properties of Advanced Materials
- Advanced Semiconductor Detectors and Materials
- Electrocatalysts for Energy Conversion
- ZnO doping and properties
Sichuan University
2024
South China Normal University
2024
Nankai University
2022-2023
Zhengzhou University of Light Industry
2023
Shanghai Sixth People's Hospital
2022
Shanghai Jiao Tong University
2022
Shanghai Institute of Technical Physics
2019-2022
University of Chinese Academy of Sciences
2019-2022
Second Affiliated Hospital of Fujian Medical University
2021
Fujian Medical University
2021
Two-dimensional (2D) infrared photodetectors always suffer from low quantum efficiency (QE) because of the limited atomically thin absorption. Here, we reported 2D black phosphorus (BP)/Bi2O2Se van der Waals (vdW) with momentum-matching and band-alignment heterostructures to achieve high QE. The QE was largely improved by optimizing generation, suppressing recombination, improving collection photocarriers. Note that BP/Bi2O2Se in k-space lead highly efficient generation transition...
Abstract Bi 2 O Se, a high‐mobility and air‐stable 2D material, has attracted substantial attention for application in integrated logic electronics optoelectronics. However, achieving an overall high performance over wide spectral range Se‐based devices remains challenge. A broadband phototransistor with photoresponsivity ( R ) is reported that comprises high‐quality large‐area ≈ 180 µm) Se nanosheets synthesized via modified chemical vapor deposition method face‐down configuration. The...
Abstract Low‐symmetry 2D materials with unique anisotropic optical and optoelectronic characteristics have attracted a lot of interest in fundamental research manufacturing novel devices. Exploring new low‐symmetry narrow‐bandgap will be rewarding for the development nanoelectronics nano‐optoelectronics. Herein, sulfide niobium (NbS 3 ), transition metal trichalcogenide semiconductor structure, is introduced into narrowband material strong physical properties both experimentally...
Abstract 2D layered materials are an emerging class of low‐dimensional with unique physical and structural properties extensive applications from novel nanoelectronics to multifunctional optoelectronics. However, the widely investigated strongly limited in high‐performance electronics ultrabroadband photodetectors by their intrinsic weaknesses. Exploring new narrow bandgap is very imminent fundamental. A narrow‐bandgap noble metal dichalcogenide (PtS 2 ) demonstrated this study. The...
Abstract 2D Bi 2 O Se has shown great potential in photodetector from visible to infrared (IR) owing its high mobility, ambient stability, and layer‐tunable bandgaps. However, for the terahertz (THz) band with longer wavelength richer spectral information, there are few reports on research of THz detection based materials. Herein, an antenna‐assisted is constructed achieve broadband photodetection IR ranges driven by multi‐mechanism electromagnetic waves electrical conversion. The good...
High quality p-n junctions based on 2D layered materials (2DLMs) are urgent to exploit, because of their unique properties such as flexibility, high absorption, and tunability which may be utilized in next-generation photovoltaic devices. Based transfer technology, large amounts vertical heterojunctions 2DLMs investigated. However, the complicated fabrication process inevitable defects at interfaces greatly limit application prospects. Here, an in-plane intramolecular WSe2 junction is...
Abstract For each generation of semiconductors, the issue doping techniques is always placed at top priority list since it determines whether a material can be used in electronic and optoelectronic industry or not. When comes to 2D materials, significant challenges have been found controllably semiconductors into p‐ n‐type, let alone developing continuous control this process. Here, unique self‐modulated characteristic layered materials such as PtSSe, PtS 0.8 Se 1.2 , PdSe 2 WSe reported....
Advanced fuel technology development requires exhaust after-treatment catalysts with low-temperature oxidation properties. For diesel (DOCs), reducing competitive at the key active site Pt in multicomponent gases (carbon monoxide (CO), hydrocarbons (HC), and nitrogen oxides (NOx)) is most effective solution to this problem. Here, composite multiple centers of Pt/Bi3+-doped YMn2O5 were prepared. And a competing atmosphere, complete conversion temperature (T100) for CO Bi3+-doped was only 210...
In-plane anisotropic two-dimensional (2D) materials with asymmetric lattices are potential candidates for high performance polarized photodetection, which provides much richer optical information than conventional such as polarization, azimuth, and ellipticity of the targets. Herein, non-layer structured ZnSb was grown into 2D nanostructures used to fabricate room-temperature infrared photodetectors. Studies found that synthesized nanoplates exhibited strong in-plane electrical anisotropy...
Abstract The preparation of ternary 2D layered material (2DLM) FePSe 3 and field‐effect transistor (FET) type photodetector are investigated. By advancing an optimized chemical vapor transport method, bulk crystal is synthesized within several growth hours instead routinely required weeks, from which 2DLM flakes with a thickness ≈22.0 nm high crystalline quality obtained through mechanical exfoliation. Ohmic contacts for FET structure good linear conductivity thermal stability implemented...
Abstract Infrared photodetectors are widely used in the field of remote sensing, communications, biomedical imaging, etc. Most photodetection based on 2D transition‐metal dichalcogenides (TMDs) is limited to visible (Vis) near‐infrared (NIR) due large intrinsic bandgaps (≈1.2–2 eV). Here, a bandgap engineering HfS 2 by tellurium (Te)‐replacement strategy obtained via chemical vapor transport method. The values 2(1− x ) Te decrease from 1.7 0.88 eV with composition changing 0 0.095. Few‐layer...
In recent years, as a direct wide band gap semiconductor, zinc oxide (ZnO) nanomaterial has attracted lot of attention. However, the widely investigated ZnO materials are strongly limited in fast-response and broadband photodetectors due to their inherent weaknesses, so an effective structure or mechanism nanostructure photodetector is greatly needed. this work, photogating-controlled based on nanosheet-HfO2-lightly doped Si architecture demonstrated. Its performance was significantly...
Background: The rapid outbreak of coronavirus disease 2019 (COVID-19) posed a serious threat to China, followed by compulsive measures taken against the national emergency control its further spread. This study was designed describe residents' knowledge, attitudes, and practice behaviors (KAP) during COVID-19. Methods: An anonymous online questionnaire randomly administrated residents in mainland China between Mar 7 16, 2020. Residents' responses KAP were quantified descriptive stratified...