A5053010256- Advanced Semiconductor Detectors and Materials
- Spectroscopy and Laser Applications
- Semiconductor Quantum Structures and Devices
- Photonic and Optical Devices
- Advanced Fiber Laser Technologies
- Nanowire Synthesis and Applications
- 2D Materials and Applications
- Perovskite Materials and Applications
- Advanced Antenna and Metasurface Technologies
- Photonic Crystal and Fiber Optics
- Electromagnetic wave absorption materials
- Solid State Laser Technologies
- Dielectric materials and actuators
- GaN-based semiconductor devices and materials
- Advanced Optical Sensing Technologies
- Advanced Fiber Optic Sensors
- Chalcogenide Semiconductor Thin Films
- Semiconductor Lasers and Optical Devices
Shanghai Institute of Technical Physics
2019-2024
Chinese Academy of Sciences
2022-2023
University of Chinese Academy of Sciences
2019-2023
Semiconductor saturable absorber mirrors (SESAMs) have been regarded as a revolutionary technology for ultrafast mode-locked lasers, producing numerous landmark laser breakthroughs. However, the operating wavelength of existing SESAMs is limited to less than 3 µm. In this study, we create 3-5 µm mid-infrared (MIR) SESAM by engineering an InAs/GaSb type-II superlattice. Bandgap and strong coupling between potential wells in superlattice enable broadband response absorption spectral range....
In this work, 2-stage and 5-stage mid-infrared superlattice interband cascade light emitting diodes (ICLEDs) were fabricated studied at different temperatures. The ICLEDs composed of InAs/GaAsSb active regions, InAs/AlAsSb injection GaAsSb/AlAsSb tunneling regions. devices exhibited high output power very low series resistance, indicating efficient carrier blocking in the designed structure. Radiances 0.73 W/cm2 sr 0.38 achieved 300 K for ICLEDs, respectively. With an 3.56 mW, wall-plug...
High speed mid-wave infrared (MWIR) photodetectors have applications in the areas such as free space optical communication and frequency comb spectroscopy. However, most of research on MWIR is focused how to increase quantum efficiency reduce dark current, order improve detectivity (D*), 3dB bandwidth performance corresponding still not fully studied. In this work, we report characterize a interband cascade photodetector based InAs/GaSb type-II superlattice with 50% cutoff wavelength at ~5.3...
Multiple-stage interband cascade infrared photodetector (ICIP) is a new class of semiconductor that exhibits improved device performance in terms responsivity and detectivity. The design the structure electronic on superlattices quantum wells assume abrupt interfaces. However, emergence possible interface segregation atom exchange can only be determined experimentally, impacting performance. In this work, intermixing their effects energy band molecular beam epitaxy grown ICIP are studied....
We report on ten-stage interband cascade light-emitting diodes (ICLEDs) using an InAs/GaAsSb superlattices active region with a peak emission wavelength of 4.9 μm at the temperature 80 K. The ICLED devices integrated immersion lens achieve wall-plug quantum efficiency 6.6% and emittance 1.9 W/cm2 under K 7.7 A/cm2, which is seven times larger than basic device without lens. present detailed analysis recombination rates their relationship efficiency. Shockley–Read–Hall Auger were measured...
High-speed mid-wave infrared (MWIR) photodetectors have important applications in the emerging areas such high-precision frequency comb spectroscopy and light detection ranging (LIDAR). In this work, we report a high-speed room-temperature interband cascade photodetector based on type-II InAs/GaSb superlattice. The devices show an optical cut-off wavelength around 5 µm 3-dB bandwidth up to 7.04 GHz. relatively low dark current density 9.39 × 10 −2 A/cm 2 under −0.1 V is also demonstrated at...
In this paper, we reported our design and experimental results of a two-stage long wavelength interband cascade infrared photodetector (ICIP). A 3 × multiple quantum well relaxation region was proposed for ICIP. The 50% cutoff 11.6 μm at 80 K. efficiency (QE) the ICIP measured to be 24.5% 8.5 μm. dark current density −0.05 V bias 3.32 10−4 A/cm2 55 K, which is approximately 1/3 PBπBN superlattice detector. peak detectivity 4.6 1010 cm·Hz1/2/W K further raised 3.6 1011cm·Hz1/2/W when...