A5056420587- 2D Materials and Applications
- Nanowire Synthesis and Applications
- Perovskite Materials and Applications
- Catalytic Alkyne Reactions
- Graphene research and applications
- MXene and MAX Phase Materials
- Catalytic C–H Functionalization Methods
- Advanced Memory and Neural Computing
- Chalcogenide Semiconductor Thin Films
- Asymmetric Synthesis and Catalysis
- Synthetic Organic Chemistry Methods
- Advanced Sensor and Energy Harvesting Materials
- Advanced Optical Sensing Technologies
- Quantum Dots Synthesis And Properties
- Cyclopropane Reaction Mechanisms
- Asymmetric Hydrogenation and Catalysis
- Ga2O3 and related materials
- Catalytic Cross-Coupling Reactions
- Image and Video Quality Assessment
- ZnO doping and properties
- Advanced Algorithms and Applications
- Transition Metal Oxide Nanomaterials
- Topological Materials and Phenomena
- Gas Sensing Nanomaterials and Sensors
- CCD and CMOS Imaging Sensors
Fujian Institute of Research on the Structure of Matter
2021-2024
University of Chinese Academy of Sciences
2018-2024
Chinese Academy of Sciences
2016-2023
Beijing University of Technology
2013-2023
Fuzhou University
2022
ShanghaiTech University
2020
Center for Excellence in Molecular Cell Science
2020
Shanghai Institute of Technical Physics
2016-2019
Wuhan University
2016-2019
Wuhan National Laboratory for Optoelectronics
2019
An advanced visible/infrared dual-band photodetector with high-resolution imaging at room temperature is proposed and demonstrated for intelligent identification based on the 2D GaSe/GaSb vertical heterostructure. It resolves challenges of producing large-scale growth, achieving fast response speed, outstanding detectivity, lower manufacture cost, which are main obstacles industrialization 2D-materials-based photodetection.
Two-dimensional materials are promising candidates for electronic and optoelectronic applications. MoTe2 has an appropriate bandgap both visible infrared light photodetection. Here we fabricate a high-performance photodetector based on few-layer MoTe2. Raman spectral properties have been studied different thicknesses of The exhibits broad range photodetection (0.6-1.55 μm) stable fast photoresponse. detectivity is calculated to be 3.1 × 10(9) cm Hz(1/2) W(-1) 637 nm 1.3 1060 at backgate...
Abstract Van der Waals heterojunctions made of 2D materials offer competitive opportunities in designing and achieving multifunctional high‐performance electronic optoelectronic devices. However, due to the significant reverse tunneling current such thin p–n junctions, a low rectification ratio along with large is often inevitable for heterojunctions. Here, vertically stacked van heterojunction (vdWH) device reported consisting black arsenic phosphorus (AsP) indium selenide (InSe), which...
Remote stereocontrol in transition-metal catalysis is a challenging but interesting research topic. In this work, we achieved copper-catalyzed asymmetric yne-allylic substitution using electron-rich arenes and acyclic carbonates through remote enantioselectivity control. The reaction delivers variety of enantioenriched products that contain diverse set valuable moieties, such as conjugated enynes, indoles, indolizines, allenes, dihydrofurans, which are widely used organic synthesis act key...
One-dimensional InAs nanowires (NWs) have been widely researched in recent years. Features of high mobility and narrow bandgap reveal its great potential optoelectronic applications. However, most reported work about NW-based photodetectors is limited to the visible waveband. Although some shows certain response for near-infrared light, problems large dark current small light on/off ratio are unsolved, thus significantly restricting detectivity. Here this work, a novel "visible...
One-dimensional semiconductor nanowires (NWs) have been widely applied in photodetector due to their excellent optoelectronic characteristics. However, intrinsic carrier concentration at certain level results appreciable dark current, which limits the detectivity of devices. Here, we fabricated a novel type ferroelectric-enhanced side-gated NW photodetectors. The carriers channel can be fully depleted by ultrahigh electrostatic field from polarization P(VDF-TrFE) ferroelectric polymer. In...
In recent years, 2D layered materials have been considered as promising photon absorption channel media for next‐generation phototransistors due to their atomic thickness, easily tailored single‐crystal van der Waals heterostructures, ultrafast optoelectronic characteristics, and broadband absorption. However, the photosensitivity obtained from such devices, even under a large bias voltage, is still unsatisfactory until now. this paper, high‐sensitivity based on WS 2 MoS are proposed,...
An efficient ferroelectric‐enhanced side‐gated single CdS nanowire (NW) ultraviolet (UV) photodetector at room temperature is demonstrated. With the ultrahigh electrostatic field from polarization of ferroelectric polymer, depletion intrinsic carriers in NW channel achieved, which significantly reduces dark current and increases sensitivity UV even after gate voltage removed. Meanwhile, low frequency noise power device reaches as 4.6 × 10 −28 A 2 a source‐drain V ds = 1 V. The exhibits high...
Because of the distinct electronic properties and strong interaction with light, quasi-one-dimensional nanowires (NWs) semiconducting property have been demonstrated tremendous potential for various technological applications, especially electronics optoelectronics. However, until now, most state-of-the-art NW photodetectors are predominantly based on n-type channel. Here, we successfully synthesized p-type SnSe SnS NWs via chemical vapor deposition method fabricated high-performance single...
Abstract Assembling nanomaterials into hybrid structures provides a promising and flexible route to reach ultrahigh responsivity by introducing trap‐assisted gain ( G ) mechanism. However, the high‐gain photodetectors benefitting from long carrier lifetime often possess slow response time t due inherent – tradeoff. Here, light‐driven junction field‐effect transistor (LJFET), consisting of an n‐type ZnO belt as channel material p‐type WSe 2 nanosheet photoactive gate material, break tradeoff...
Over the past few years, two-dimensional (2D) nanomaterials, such as MoS<sub>2</sub>, have been widely considered promising channel materials for next-generation high-performance phototransistors. However, their device performances are still mostly suffered from slow photoresponse (e.g. with time constant in order of milliseconds) due to relatively long length and substantial surface defect induced carrier trapping, well insufficient detectivity owing large dark current. In this work, a...
The emerging data-intensive applications in optoelectronics are driving innovation toward the fused integration of sensing, memory, and computing to break through restrictions von Neumann architecture. However, present photodetectors with only optoelectronic conversion functions cannot satisfy growing demands multifunctions required single devices. Here, a novel route for non-volatile memory into photodetector is proposed, WSe2 /h-BN van der Waals heterostructure on Si/SiO2 substrate realize...
Single-photon detectors that can resolve photon number play a key role in advanced quantum information technologies. Despite significant progress improving conventional photon-counting and developing novel device concepts, single-photon are capable of distinguishing incident at room temperature still very limited. We demonstrate room-temperature photon-number-resolving detector by integrating field-effect transistor configuration with core/shell-like nanowires. The shell serves as...
Graphene, a two-dimensional material, is expected to enable broad-spectrum and high-speed photodetection because of its gapless band structure, ultrafast carrier dynamics high mobility. We demonstrate multispectral active infrared imaging by using graphene photodetector based on hybrid response mechanisms at room temperature. The high-quality images with optical resolutions 418 nm, 657 nm 877 close-to-theoretical-limit Michelson contrasts 0.997, 0.994, 0.996 have been acquired for 565 1550...
Nanowire photodetectors, which have the advantages of fast response and high photoelectric conversion efficiency, can be widely applied in various industries. However, rich surface states result large dark current hinder development high-performance nanowire photodetectors. In this paper, influence mechanism sulfur passivation on a single GaAs photodetector been studied. The is significantly reduced by about 30 times after passivation. We confirm that origin reduction decrease state density....
Photodetectors based on low-dimensional materials have attracted tremendous attention because of their high sensitivity and compatibility with conventional semiconductor technology. However, up until now, developing phototransistors responsivity low dark currents over broad-band spectra still remains a great challenge the trade-offs in potential architectures. In this work, we report hybrid phototransistor consisting single In2O3 nanowire as channel material multilayer WSe2 nanosheet...
Developing innovative dynamic kinetic resolution (DKR) modes and achieving the highly regio- enantioselective semihydrogenation of unsymmetrical α-diketones are two formidable challenges in field contemporary asymmetric (transfer) hydrogenation. In this work, we report stereoselective semi-transfer hydrogenation through a unique DKR mode, which features reduction carbonyl group distal from labile stereocenter, while proximal remains untouched. Moreover, protocol affords variety...
The photodiode is a prevailing architecture for photodetection with the merits of fast response and low dark current. However, an ideal also desired both high responsivity external quantum efficiency (EQE), which may facilitate more applications. Here photoconducting effect in discussed Au-PbS colloidal dot (CQD)-indium tin oxide Schottky junction fabricated. long carrier lifetime improved mobility tetrabutylammonium iodide-modified PbS CQDs cooperating proper band structure ultrashort...
The merger of two powerful synthetic strategies, i.e., asymmetric semipinacol-type rearrangement and transition-metal-catalyzed propargylic alkylation, has been achieved, delivering a range enantioenriched cyclo- heterocyclopentanones with α-alkynylated quaternary stereocenters. Such types products are challenging to obtain using other methods, their value demonstrated in variety further transformations. work represents distinctive mode inducing 1,2-carbon migration expands the scope substitution.
Recently, black phosphorus (BP) has attracted enormous attention as the potential materials for next‐generation photonic device applications due to high carrier mobility and narrow bandgap. However, metal–semiconductor–metal (MSM) structure of BP photodetectors cannot achieve simultaneously photoresponsivity fast photoresponse, its natural surface defects, thinness absorption layer, instability in air, which limits application MSM photodetectors. Here, infrared with multilayer sandwiched...
Nanostructured zinc oxide (ZnO) semiconductors have emerged as promising materials for high-performance photodetectors due to their natural direct bandgap and extraordinary physicochemical properties. However, the oxygen vacancy defects of nano-ZnO can easily trap molecules in air generate charge transfer at interface, which induced continuous photoconductance that limited development application ZnO photodetection. Here, we demonstrate a homojunction ultrathin nanosheet photodetector with...
In recent years, the electrical characteristics of WSe2 field-effect transistors (FETs) have been widely investigated with various dielectrics. Among them, being able to perfectly tune polarity is meaningful and promising work. this work, we systematically study properties bilayer FETs modulated by ferroelectric polymer poly(vinylidenefluoride-co-trifluoroethylene) (P(VDF-TrFE)). Compared traditional gate dielectric SiO2, P(VDF-TrFE) can not only both electron hole concentrations same high...
Ethers are among the most important chemicals in organic synthesis, pharmaceutical industry, agrochemical production, and material science. C-O bond formation via substitution is one of widely used strategies for ether formation. However, known methods usually employ transition-metal bases to facilitate process. In this work, we describe base- transition-metal-free alcohol phenol-participated substitution. The protocol allows access a large number ethers with enyne functional moieties,...