A5101916360- 2D Materials and Applications
- MXene and MAX Phase Materials
- Perovskite Materials and Applications
- Nanowire Synthesis and Applications
- Graphene research and applications
- Luminescence Properties of Advanced Materials
- Quantum Dots Synthesis And Properties
- Advanced Semiconductor Detectors and Materials
- Advanced Control Systems Optimization
- Machine Learning in Materials Science
- Gas Sensing Nanomaterials and Sensors
- Advanced Photocatalysis Techniques
- Ga2O3 and related materials
- Chalcogenide Semiconductor Thin Films
- Innovative Microfluidic and Catalytic Techniques Innovation
- Advanced Optical Sensing Technologies
- Advanced Nanomaterials in Catalysis
- ZnO doping and properties
- Semiconductor materials and devices
- Ferroelectric and Piezoelectric Materials
- Multiferroics and related materials
- Electronic and Structural Properties of Oxides
- Chemical Synthesis and Analysis
- Semiconductor Quantum Structures and Devices
- GaN-based semiconductor devices and materials
Nantong University
2019-2025
University of Science and Technology of China
2017-2024
City University of Hong Kong
2024
Chinese Academy of Sciences
2006-2024
Shanghai Institute of Technical Physics
2016-2024
Hefei National Center for Physical Sciences at Nanoscale
2022
University of Chinese Academy of Sciences
2017-2021
Taiyuan University of Technology
2021
Kunming University of Science and Technology
2019
Zhongshan Hospital
2018
Abstract Van der Waals (vdW) heterodiodes based on two-dimensional (2D) materials have shown tremendous potential in photovoltaic detectors and solar cells. However, such 2D devices are limited by low quantum efficiencies due to the severe interface recombination inefficient contacts. Here, we report an efficient MoS 2 /AsP vdW hetero-photodiode utilizing a unilateral depletion region band design narrow bandgap AsP as effective carrier selective contact. The is verified via both Fermi level...
The realization of automated chemical experiments by robots unveiled the prelude to an artificial intelligence (AI) laboratory. Several AI-based systems or with specific skills have been demonstrated, but conducting all-round scientific research remains challenging. Here, we present AI-Chemist equipped data that is capable performing basic tasks generally required in research. Based on a service platform, able automatically read literatures from cloud database and propose experimental plans...
One-dimensional InAs nanowires (NWs) have been widely researched in recent years. Features of high mobility and narrow bandgap reveal its great potential optoelectronic applications. However, most reported work about NW-based photodetectors is limited to the visible waveband. Although some shows certain response for near-infrared light, problems large dark current small light on/off ratio are unsolved, thus significantly restricting detectivity. Here this work, a novel "visible...
In recent years, 2D layered materials have been considered as promising photon absorption channel media for next‐generation phototransistors due to their atomic thickness, easily tailored single‐crystal van der Waals heterostructures, ultrafast optoelectronic characteristics, and broadband absorption. However, the photosensitivity obtained from such devices, even under a large bias voltage, is still unsatisfactory until now. this paper, high‐sensitivity based on WS 2 MoS are proposed,...
Abstract 2D layered materials are an emerging class of low‐dimensional with unique physical and structural properties extensive applications from novel nanoelectronics to multifunctional optoelectronics. However, the widely investigated strongly limited in high‐performance electronics ultrabroadband photodetectors by their intrinsic weaknesses. Exploring new narrow bandgap is very imminent fundamental. A narrow‐bandgap noble metal dichalcogenide (PtS 2 ) demonstrated this study. The...
Abstract Low‐symmetry 2D materials with unique anisotropic optical and optoelectronic characteristics have attracted a lot of interest in fundamental research manufacturing novel devices. Exploring new low‐symmetry narrow‐bandgap will be rewarding for the development nanoelectronics nano‐optoelectronics. Herein, sulfide niobium (NbS 3 ), transition metal trichalcogenide semiconductor structure, is introduced into narrowband material strong physical properties both experimentally...
Abstract 2D Bi 2 O Se has shown great potential in photodetector from visible to infrared (IR) owing its high mobility, ambient stability, and layer‐tunable bandgaps. However, for the terahertz (THz) band with longer wavelength richer spectral information, there are few reports on research of THz detection based materials. Herein, an antenna‐assisted is constructed achieve broadband photodetection IR ranges driven by multi‐mechanism electromagnetic waves electrical conversion. The good...
Abstract Assembling nanomaterials into hybrid structures provides a promising and flexible route to reach ultrahigh responsivity by introducing trap‐assisted gain ( G ) mechanism. However, the high‐gain photodetectors benefitting from long carrier lifetime often possess slow response time t due inherent – tradeoff. Here, light‐driven junction field‐effect transistor (LJFET), consisting of an n‐type ZnO belt as channel material p‐type WSe 2 nanosheet photoactive gate material, break tradeoff...
Abstract Deep-ultraviolet (DUV) phototransistors have shown great potential applications in UV imaging, artificial intelligence, and wearable optoelectronics. Among a large number of wide bandgap semiconductors, the quasi-two-dimensional β -Ga 2 O 3 is considered as an ideal candidate for DUV photodetector applications. Herein, we report high responsivity ( R ) fully flexible Ta-doped phototransistor which exhibits outstanding optoelectrical properties with 1.32 × 10 6 A/W, detectivity 5.68...
Two-dimensional layered materials, such as molybdenum disulfide, are emerging an exciting material system for future electronics due to their unique electronic properties and atomically thin geometry. In this work, MoS2-based FETs fabricated using mechanical cleavage standard photolithographic metal evaporation techniques, the detector exhibits a good ohmic contact. We show that multilayer disulfide photodetector has fast photoresponse short 42 μs. The response is decrease in trap states...
Abstract The hybridization of 2D materials and colloidal quantum dots (CQDs) has been demonstrated to be an ideal platform for infrared photodetectors due the high mobility excellent light harvesting capability CQDs. However, realization ambipolar, broadband, room‐temperature graphene–quantum dot phototransistors with complementary metal–oxide–semiconductor (CMOS) compatibility remains challenging. Here N, S codecorated graphene is deposited PbS CQDs fabricate a hybrid phototransistor on...
Two-dimensional (2D) materials with narrow band gaps (∼0.3 eV) are of great importance for realizing ambipolar transistors and mid-infrared (MIR) detections. However, most the 2D studied to date have that too large. A few suitable not stable under ambient conditions. In this study, layered Nb2SiTe4 is shown be a material gap 0.39 eV. Field-effect based on few-layer show transport similar magnitude electron hole current high charge-carrier mobility ∼100 cm2 V–1 s–1 at room temperature....
In semiconductor manufacturing, PN junction is formed by introducing dopants to activate neighboring electron and hole conductance. To avoid structural distortion failure, it generally requires the foreign localize in designated micro-areas. This, however, challenging due an inevitable interdiffusion process. Here we report a brand-new architecture, called "layer junction", that might break through such limit help redefine device architecture. Different from all existing semiconductors, find...
Single-photon detectors that can resolve photon number play a key role in advanced quantum information technologies. Despite significant progress improving conventional photon-counting and developing novel device concepts, single-photon are capable of distinguishing incident at room temperature still very limited. We demonstrate room-temperature photon-number-resolving detector by integrating field-effect transistor configuration with core/shell-like nanowires. The shell serves as...
Abstract Silicon is widespread in modern electronics, but its electronic bandgap prevents the detection of infrared radiation at wavelengths above 1,100 nanometers, which limits applications multiple fields such as night vision, health monitoring and space navigation systems. It therefore interest to integrate silicon with infrared-sensitive materials broaden wavelength. Here we demonstrate a photovoltage triode that can use emitter also sensitive spectra owing heterointegrated quantum dot...
Abstract Synaptic device is an important component in artificial neural networks. Electrically‐controlled long‐term depression (LTD) demonstrated three‐terminal photonic synaptic devices, which useful for improving the efficiency of The mechanism similar to that photo‐induced doping effect. Photo‐assisted carrier transport and recombination are expected accelerate LTD process. However, effects photon illumination on not investigated. Here, electrical stimulation photo‐stimulation plasticity...
The self-activated halotungstate Ba3WO5Cl2 was successfully synthesized using a high-temperature solid-state method. X-ray diffraction analysis (XRD) confirmed the formation of single-phase compound with monoclinic crystal structure, ensuring material's purity and structural integrity. luminescence properties were thoroughly investigated both optical laser-excitation spectroscopy. photoluminescent excitation (PLE) emission (PL) spectra, together corresponding decay curves, recorded across...
Atomically thin two-dimensional materials including graphene, transition metal dichalcogenides, black phosphorus and so forth have been considered as promising channel medias for electronic optoelectronic devices in the past few years. However, poor photoresponse time large dark current are two major issues which greatly block their applications. Here, we report a vertical Au-WSe2-ITO (indium tin oxide) Schottky junction photodetector with broadband from 550-950 nm stable photovoltaic...