A5030475008- Terahertz technology and applications
- 2D Materials and Applications
- Photonic and Optical Devices
- Advanced Semiconductor Detectors and Materials
- Chalcogenide Semiconductor Thin Films
- Superconducting and THz Device Technology
- Gas Sensing Nanomaterials and Sensors
- Electrical and Thermal Properties of Materials
- Quantum Dots Synthesis And Properties
- Plasmonic and Surface Plasmon Research
- Metamaterials and Metasurfaces Applications
- Copper-based nanomaterials and applications
- ZnO doping and properties
- Semiconductor Quantum Structures and Devices
- Transition Metal Oxide Nanomaterials
- Topological Materials and Phenomena
- Photonic Crystals and Applications
- Advanced Thermoelectric Materials and Devices
- Spectroscopy and Laser Applications
- Acoustic Wave Resonator Technologies
- Magnetic properties of thin films
- Surface and Thin Film Phenomena
- Surface Roughness and Optical Measurements
- Microwave Dielectric Ceramics Synthesis
- Semiconductor materials and devices
Shanghai Institute of Technical Physics
2016-2025
Chinese Academy of Sciences
2015-2016
East China Normal University
2008
Abstract Room-temperature photodetection holds pivotal significance in diverse applications such as sensing, imaging, telecommunications, and environmental remote sensing due to its simplicity, versatility, indispensability. Although different kinds of photon thermal detectors have been realized, high sensitivity with room temperature extremum is not reported until now. Herein, we find evident peaks the photoelectric response originated from anomalous excitonic insulator phase transition...
Abstract 2D Bi 2 O Se has shown great potential in photodetector from visible to infrared (IR) owing its high mobility, ambient stability, and layer‐tunable bandgaps. However, for the terahertz (THz) band with longer wavelength richer spectral information, there are few reports on research of THz detection based materials. Herein, an antenna‐assisted is constructed achieve broadband photodetection IR ranges driven by multi‐mechanism electromagnetic waves electrical conversion. The good...
Abstract Metasurfaces solve the lack of materials in terahertz (THz) band and control precisely amplitude, phase, polarization, transmission characteristics THz waves, providing an effective way to realize functional devices. This article focuses on design metasurface modulators with a unit structure consisting metal square rings, including resonance frequency, amplitude modulators. By embedding photosensitive semiconductor silicon (Si) structure, is built from meta‐atom molecularization...
Ultrabroadband photodetection is of great significance in numerous cutting-edge technologies including imaging, communications, and medicine. However, since photon detectors are selective wavelength thermal slow response, developing high performance ultrabroadband photodetectors extremely difficult. Herein, one demonstrates an photoelectric detector covering visible, infrared, terahertz, millimeter wave simultaneously based on single metal-Te-metal structure. Through the two kinds effect...
Photoelectric detection is developing rapidly from ultraviolet to infrared band. However, terahertz (THz) photodetection approaches constrained by the bandgap, dark current, and absorption ability. In this work, room-temperature photoelectric extended THz range implemented in a planar metal-NbSe2-metal structure based on an electromagnetic induced well (EIW) theory, exhibiting excellent broadband responsivity of 5.2 × 107 V W-1 at 0.027 THz, 7.8 106 0.173 9.6 105 0.259 THz. Simultaneously,...
A series of Mn1.56Co0.96Ni0.48O4±δ (MCNO) spinel films are fabricated by RF magnetron sputtering under various oxygen concentration 0%-10% atmospheres followed annealing at 750 °C. The addition in the deposition atmosphere can enhance temperature coefficient negative resistance (TCR), but resistivity increases. When preferred orientations (311) and (220) crystal faces exhibited, quality is optimum, emergence other deteriorates films. Meanwhile, with increase atmosphere, deposited MCNO...
Abstract Broadening the spectral range of photodetectors is vital for photodetection. However, current photoelectric detectors are selective to wavelength, which depends on bandgap, and thermal respond slowly at room temperature. It challenging achieve photoconductivity independent semiconductor needed broaden photodetectors. Here, we use 2D Sb 2 Te 3 develop a photodetector with metal-semiconductor-metal structure multiband response, covering visible, infrared, terahertz millimeter...
Broadband room-temperature photodetection has become a pressing need as application requirements for communication, imaging, spectroscopy, and sensing have evolved. Topological insulators (TIs) narrow bandgap structures with wide absorption spectral response range, which should meet the of broadband detection. However, owing to their high carrier concentration low mobility resulting in poor noise equivalent power (NEP), they are generally considered unsuitable photodetection. Here, InBiTe
Broadband photodetection has been a hot topic since the development of application requirements for communication, imaging, spectroscopy, and sensing. However, state-of-the-art photodetectors face issues narrow response spectrum, low sensitivity, slow speed, complex fabrication processes. Here, VSe2 nanosheets are utilized to fabricate an antenna-assisted ultrabroadband photodetector from visible terahertz (THz) region with fast driven by multimechanism synergy. In visible–infrared region,...
Integration of photonic nanostructures with optoelectrical semiconductors offers great potential developing high sensitivity and multifunctional photodetectors enabled by enhanced light–matter interactions. Split ring resonator (SRR) array which resonates at different resonant modes, including fundamental magnetic mode (m0), order (m1), electric (e) has been investigated because the for applications. In this work, we study photodetection enhancement these modes U-shape SRR arrays in...
Terahertz technologies are of great significance in a wide range applications, such as astronomy, medicine, communications and nondestructive material characterization. However, the energy terahertz photons is so small that it difficult to detect directly at room temperature. Two-dimensional (2D) materials with excellent optoelectronic properties provide opportunities for development photodetectors. Herein, we develop high-performance photodetector metal–semiconductor–metal structure via...
With the demand for communication, imaging, spectroscopy, and other applications, broadband detection has always been a particularly popular direction. However, current photodetectors have problems of relatively narrow response bands, low sensitivity, slow speed, complex manufacturing processes. In this article, alloy material InBiSe3 is proposed to manufacture wideband photodetector from visible terahertz at room temperature. The noise equivalent power (NEP) detector 1.37 × 10−10 W Hz−1/2...
The 3D MSM structured Si detector achieves a high-performance broadband response of 1550 nm and 0.22–0.33 THz at room temperature based on the bolometric effect EIW mechanisms beyond cut-off wavelength Si.
We demonstrated a Si-based photoelectric detector with silicon-on-insulator structure. The was successfully fabricated and showed broadband response from 20–40 GHz to 0.165–0.173 THz radiation at room temperature. It achieved maximal responsivity of 49.3 kV W−1 noise equivalent power (NEP) 0.38 GHz, 3.3 NEP 5.7 THz; moreover, short time ∼810 ns realized for the detector. simple structure, excellent performance easy integration detectors, which provides an avenue optoelectronic sensitive...
Room temperature, broadband infrared (IR) bolometer was investigated for the first time by using Mn1.56Co0.96Ni0.48O4 (MCNO) thin film with dielectric-metal-dielectric absorptive layers. The Si3N4/NiCr/SiO2 layer constructed to improve light absorption. A responsivity of 98.6 V/W and D* 2.1 × 107 cm∙Hz0.5/W@20 Hz, a typical constant 14.5 ms, obtained 1550 nm laser. response spectra detector covered range from near far infrared, which greatly enhanced potential MCNO films in large-scale IR...
Terahertz wave is between microwave and infrared bands in the electromagnetic spectrum with frequency range from 0.1 THz to 10 THz. Controlling processing of polarization state terahertz are focus due its great influence on characteristics. In this paper, a transmissive metasurface converter designed 3D structure an upper surface ruler-like rectangular, intermediate dielectric layer lower metal grid wires. Numerical simulations show that conversion ratio (PCR) above 99.9% at 0.288 THz–1.6...
Silicon (Si) is the most important semiconductor material broadly used in both electronics and optoelectronics. However, performance of Si-based room temperature detectors far below requirements for direct detection terahertz (THz) band, a very promising electromagnetic band next-generation technology. Here, we report high sensitivity THz photodetector utilizing induced well mechanism with an SOI-based structure easy integration. The detector achieves responsivity 122 kV W-1, noise...
All-InSb film-based and spiral antenna-assisted Au-InSb-Au metal-semiconductor-metal detector is reported with dual-band photoresponse in the infrared (IR) millimeter wave range. At IR, exhibits a long wavelength 100% cut-off at 7.3 µm. Under an applied bias of 5 mA, uncooled blackbody responsivity specific detectivity are 3.5 A/W 1×108 Jones, respectively. The f-3dB value measured 2.94 µm 75 KHz, corresponding to rise speed 4.7 µs. range, shows narrowband response determined by coupling...
A sub-terahertz photodetector based on the narrow-gap semiconductor In0.53Ga0.47As is designed, fabricated, and characterized. The detector exhibits a responsivity up to 515 V/W, noise equivalent power lower than 20 pW/Hz0.5, detectivity 7.2 × 108 cm·Hz0.5/W, response time of 4.1 µs in waveband for room-temperature operation. achieved excellent performance, together with relatively large feature size, simple structure, easy manufacturing, provide promising approach development sensitive...
In article number 2009554, Man Luo, Peng Wang, Zhiming Huang, and co-workers demonstrate a room-temperature 2D Bi2O2Se photodetector with ultrafast (476 ns) ultralow noise (0.2 pW Hz−1/2) for broadband detection. the infrared regions, nonequilibrium carriers result from photo-induced electron-hole pairs in Bi2O2Se. While THz region, electrons are injected metal electrodes to by electromagnetic induced well under wave.
Hybrid metasurfaces incorporated by active materials hold great promise for state‐of‐the‐art terahertz functional devices. However, it is still a major challenge to achieve ultrafast, dynamic, and multifunctional effective control of THz waves via hybrid metasurfaces. Herein, modulator consisting split rings cut‐wires first demonstrated, with an amplitude −35.6 dB at 0.524 THz. By embedding semiconductor silicon into specified locations form metasurface, the ultrastrong connectivity bridges...
Long bases RT THz standoff spectrometer is designed. GaSe <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">91</sub> S xmlns:xlink="http://www.w3.org/1999/xlink">0.09</sub> :Al(0.03 at.%) DFG of near IR lasers was seeded by emission from electronic system. generation efficiency improved the factor ≥10 at principally reduced bandwidth, and pulse magnitude variation decreased for least 4-5 times.