Abstract Room-temperature photodetection holds pivotal significance in diverse applications such as sensing, imaging, telecommunications, and environmental remote sensing due to its simplicity, versatility, indispensability. Although different kinds of photon thermal detectors have been realized, high sensitivity with room temperature extremum is not reported until now. Herein, we find evident peaks the photoelectric response originated from anomalous excitonic insulator phase transition...

Abstract Metasurfaces solve the lack of materials in terahertz (THz) band and control precisely amplitude, phase, polarization, transmission characteristics THz waves, providing an effective way to realize functional devices. This article focuses on design metasurface modulators with a unit structure consisting metal square rings, including resonance frequency, amplitude modulators. By embedding photosensitive semiconductor silicon (Si) structure, is built from meta‐atom molecularization...

Ultrabroadband photodetection is of great significance in numerous cutting-edge technologies including imaging, communications, and medicine. However, since photon detectors are selective wavelength thermal slow response, developing high performance ultrabroadband photodetectors extremely difficult. Herein, one demonstrates an photoelectric detector covering visible, infrared, terahertz, millimeter wave simultaneously based on single metal-Te-metal structure. Through the two kinds effect...

In this paper, we design a metasurface terahertz perfect absorber with multi-frequency selectivity and good incident angle compatibility using double-squared open ring structure. Simulations reveal five selective absorption peaks located at 0-1.2 THz 94.50% 0.366 THz, 99.99% 0.507 95.65% 0.836 98.80% 0.996 86.70% 1.101 caused by two resonant absorptions within the fundamental unit (fundamental mode of resonance absorption, FRA) its adjacent (supermodel SRA) in structure, respectively, when...

Photoelectric detection is developing rapidly from ultraviolet to infrared band. However, terahertz (THz) photodetection approaches constrained by the bandgap, dark current, and absorption ability. In this work, room-temperature photoelectric extended THz range implemented in a planar metal-NbSe2-metal structure based on an electromagnetic induced well (EIW) theory, exhibiting excellent broadband responsivity of 5.2 × 107 V W-1 at 0.027 THz, 7.8 106 0.173 9.6 105 0.259 THz. Simultaneously,...

A series of Mn1.56Co0.96Ni0.48O4±δ (MCNO) spinel films are fabricated by RF magnetron sputtering under various oxygen concentration 0%-10% atmospheres followed annealing at 750 °C. The addition in the deposition atmosphere can enhance temperature coefficient negative resistance (TCR), but resistivity increases. When preferred orientations (311) and (220) crystal faces exhibited, quality is optimum, emergence other deteriorates films. Meanwhile, with increase atmosphere, deposited MCNO...

Room-temperature (RT) terahertz (THz) detection finds widespread applications in security inspection, communication, biomedical imaging, and scientific research. However, the state-of-the-art strategies are still limited by issues such as low sensitivity, narrow response range, slow speed, complex fabrication techniques, difficulties scaling up to large arrays. Here, we present a high-sensitivity, broadband-response, high-speed RT THz strategy utilizing deep subwavelength...

Terahertz (THz) technology can be widely used in radar, remote sensing, homeland security and counter-terrorism, high-secret data communication transmission, atmospheric environmental monitoring, real-time biological information extraction, medical diagnosis. It is the frontier of current research. However, most highly sensitive THz detectors work a relatively narrow frequency range. attracts great attention to design high-gain terahertz antenna which operates wide spectrum In this paper we...

Abstract Broadening the spectral range of photodetectors is vital for photodetection. However, current photoelectric detectors are selective to wavelength, which depends on bandgap, and thermal respond slowly at room temperature. It challenging achieve photoconductivity independent semiconductor needed broaden photodetectors. Here, we use 2D Sb 2 Te 3 develop a photodetector with metal-semiconductor-metal structure multiband response, covering visible, infrared, terahertz millimeter...

With the development of ultrafast optics, all-optical control terahertz wave modulation based on semiconductors has become an important technology regulation. In this article, ultrawideband linear polarization converter consisting a double-layered metasurface is first proposed. The conversion ratio device ∼ 100% at 0.2-2.2 THz, and transmission copolarization approaches zero in full band, which demonstrates ability high-purity output with rotating input 90° over ultrawideband. By analysis...

Broadband photodetection has been a hot topic since the development of application requirements for communication, imaging, spectroscopy, and sensing. However, state-of-the-art photodetectors face issues narrow response spectrum, low sensitivity, slow speed, complex fabrication processes. Here, VSe2 nanosheets are utilized to fabricate an antenna-assisted ultrabroadband photodetector from visible terahertz (THz) region with fast driven by multimechanism synergy. In visible–infrared region,...

Terahertz technologies are of great significance in a wide range applications, such as astronomy, medicine, communications and nondestructive material characterization. However, the energy terahertz photons is so small that it difficult to detect directly at room temperature. Two-dimensional (2D) materials with excellent optoelectronic properties provide opportunities for development photodetectors. Herein, we develop high-performance photodetector metal–semiconductor–metal structure via...

Abstract The discovery of semiconductor has witnessed remarkable strides toward high performance photodetectors attributed to its excellent carrier properties. However, semimetal, owning the concentration and low mobility compared those semiconductor, is generally considered unsuitable for photodetection. Herein, we demonstrate an outstanding photodetection in a layered semimetal titanium diselenide (TiSe 2 ) Bose–Einstein condensation (BEC) state. High sensitivity photodetector realized...

The 3D MSM structured Si detector achieves a high-performance broadband response of 1550 nm and 0.22–0.33 THz at room temperature based on the bolometric effect EIW mechanisms beyond cut-off wavelength Si.

Silicon (Si) is the most important semiconductor material broadly used in both electronics and optoelectronics. However, performance of Si-based room temperature detectors far below requirements for direct detection terahertz (THz) band, a very promising electromagnetic band next-generation technology. Here, we report high sensitivity THz photodetector utilizing induced well mechanism with an SOI-based structure easy integration. The detector achieves responsivity 122 kV W-1, noise...

Hybrid metasurfaces incorporated by active materials hold great promise for state‐of‐the‐art terahertz functional devices. However, it is still a major challenge to achieve ultrafast, dynamic, and multifunctional effective control of THz waves via hybrid metasurfaces. Herein, modulator consisting split rings cut‐wires first demonstrated, with an amplitude −35.6 dB at 0.524 THz. By embedding semiconductor silicon into specified locations form metasurface, the ultrastrong connectivity bridges...

Abstract A new type of high-performance and polarization-sensitive bolometer to detect millimeter waves is proposed, fabricated, characterized using a Mn-Co-Ni-O film. The proposed successfully avoids the complicated micro-bridge structure experimentally achieves sensitive polarization detection by planar dipole antennas. Besides, we introduce periodic metal grating structures on active material further improve performance antenna-coupled bolometer. It exhibits maximal responsivity 440.2 V ·...

High quality of Mn-Co-Ni-O (MCNO) thin films were prepared by radio frequency (RF) magnetron sputtering deposition at a very low temperature ≤450 ℃. The structure and electrical transport under different growth temperatures annealing conditions investigated. It was found that the film can be transformed from mixed conduction mechanism to single variable-range hopping appropriate conditions. optimized Mn3+/Mn4+ ratio in is close 1, which corresponding best probability small polaron hopping,...

Abstract Boson exhibits neutral charge property and negligible contribution to electrical transport. Therefore, it is very significant enhance the performance of optoelectronics. However, difficult utilize bosonic behaviors in photodetection due its fermionic quantum statistical distribution, which quite different that bosons. Herein, we realize a high sensitivity via fermion boson condensation layered titanium selenide (TiSe 2 ) under rapid slow cooling procedures. The condensation,...