A5101559751- Electrical and Thermal Properties of Materials
- Terahertz technology and applications
- Transition Metal Oxide Nanomaterials
- Gas Sensing Nanomaterials and Sensors
- Ferroelectric and Piezoelectric Materials
- Superconducting and THz Device Technology
- Metamaterials and Metasurfaces Applications
- Topological Materials and Phenomena
- Semiconductor Quantum Structures and Devices
- Advanced Semiconductor Detectors and Materials
- Semiconductor materials and devices
- 2D Materials and Applications
- Photonic and Optical Devices
- Plasmonic and Surface Plasmon Research
- Optical Coatings and Gratings
- Microwave Dielectric Ceramics Synthesis
- Nonlinear Waves and Solitons
- Photonic Crystals and Applications
- Ga2O3 and related materials
- Acoustic Wave Resonator Technologies
- Photorefractive and Nonlinear Optics
- Silicon Carbide Semiconductor Technologies
- Nonlinear Photonic Systems
- Optical Polarization and Ellipsometry
- Differential Equations and Numerical Methods
Shanghai Institute of Technical Physics
2018-2024
Chinese Academy of Sciences
2012-2024
University of Chinese Academy of Sciences
2022
Kunming University of Science and Technology
2013-2015
National Laboratory for Superconductivity
2012
Institute of Physics
2012
Abstract Metasurfaces solve the lack of materials in terahertz (THz) band and control precisely amplitude, phase, polarization, transmission characteristics THz waves, providing an effective way to realize functional devices. This article focuses on design metasurface modulators with a unit structure consisting metal square rings, including resonance frequency, amplitude modulators. By embedding photosensitive semiconductor silicon (Si) structure, is built from meta‐atom molecularization...
Ultrabroadband photodetection is of great significance in numerous cutting-edge technologies including imaging, communications, and medicine. However, since photon detectors are selective wavelength thermal slow response, developing high performance ultrabroadband photodetectors extremely difficult. Herein, one demonstrates an photoelectric detector covering visible, infrared, terahertz, millimeter wave simultaneously based on single metal-Te-metal structure. Through the two kinds effect...
In this paper, we design a metasurface terahertz perfect absorber with multi-frequency selectivity and good incident angle compatibility using double-squared open ring structure. Simulations reveal five selective absorption peaks located at 0-1.2 THz 94.50% 0.366 THz, 99.99% 0.507 95.65% 0.836 98.80% 0.996 86.70% 1.101 caused by two resonant absorptions within the fundamental unit (fundamental mode of resonance absorption, FRA) its adjacent (supermodel SRA) in structure, respectively, when...
A series of Mn1.56Co0.96Ni0.48O4±δ (MCNO) spinel films are fabricated by RF magnetron sputtering under various oxygen concentration 0%-10% atmospheres followed annealing at 750 °C. The addition in the deposition atmosphere can enhance temperature coefficient negative resistance (TCR), but resistivity increases. When preferred orientations (311) and (220) crystal faces exhibited, quality is optimum, emergence other deteriorates films. Meanwhile, with increase atmosphere, deposited MCNO...
Abstract Broadening the spectral range of photodetectors is vital for photodetection. However, current photoelectric detectors are selective to wavelength, which depends on bandgap, and thermal respond slowly at room temperature. It challenging achieve photoconductivity independent semiconductor needed broaden photodetectors. Here, we use 2D Sb 2 Te 3 develop a photodetector with metal-semiconductor-metal structure multiband response, covering visible, infrared, terahertz millimeter...
Broadband room-temperature photodetection has become a pressing need as application requirements for communication, imaging, spectroscopy, and sensing have evolved. Topological insulators (TIs) narrow bandgap structures with wide absorption spectral response range, which should meet the of broadband detection. However, owing to their high carrier concentration low mobility resulting in poor noise equivalent power (NEP), they are generally considered unsuitable photodetection. Here, InBiTe
Terahertz technologies are of great significance in a wide range applications, such as astronomy, medicine, communications and nondestructive material characterization. However, the energy terahertz photons is so small that it difficult to detect directly at room temperature. Two-dimensional (2D) materials with excellent optoelectronic properties provide opportunities for development photodetectors. Herein, we develop high-performance photodetector metal–semiconductor–metal structure via...
Abstract The discovery of semiconductor has witnessed remarkable strides toward high performance photodetectors attributed to its excellent carrier properties. However, semimetal, owning the concentration and low mobility compared those semiconductor, is generally considered unsuitable for photodetection. Herein, we demonstrate an outstanding photodetection in a layered semimetal titanium diselenide (TiSe 2 ) Bose–Einstein condensation (BEC) state. High sensitivity photodetector realized...
With the demand for communication, imaging, spectroscopy, and other applications, broadband detection has always been a particularly popular direction. However, current photodetectors have problems of relatively narrow response bands, low sensitivity, slow speed, complex manufacturing processes. In this article, alloy material InBiSe3 is proposed to manufacture wideband photodetector from visible terahertz at room temperature. The noise equivalent power (NEP) detector 1.37 × 10−10 W Hz−1/2...
The 3D MSM structured Si detector achieves a high-performance broadband response of 1550 nm and 0.22–0.33 THz at room temperature based on the bolometric effect EIW mechanisms beyond cut-off wavelength Si.
We demonstrated a Si-based photoelectric detector with silicon-on-insulator structure. The was successfully fabricated and showed broadband response from 20–40 GHz to 0.165–0.173 THz radiation at room temperature. It achieved maximal responsivity of 49.3 kV W−1 noise equivalent power (NEP) 0.38 GHz, 3.3 NEP 5.7 THz; moreover, short time ∼810 ns realized for the detector. simple structure, excellent performance easy integration detectors, which provides an avenue optoelectronic sensitive...
In this paper, we consider a model which is modulated equation in discrete nonlinear electrical transmission line. By investigating the dynamical behavior and bifurcations of solutions planar systems, derive all explicit exact parametric representations (including smooth solitary wave solutions, periodic peakons, compactons, cusp etc.) under different parameter conditions.
The source responsible for V2 (1.398 eV) luminescence in 6H-SiC is recognized as a favorable defect quantum information processing. However, the origin of still controversial. With careful photoluminescence measurements, it found that line shows clear bound exciton features. Furthermore, mechanism based on neutral vanadium donor put forward to explain luminescence. results may provide some insights understanding nature promising qubit candidates SiC.
The infrared dichroic beamsplitter plays an important role in multi-band imaging systems, especially for remote sensing. This paper presents the design and preparation of a that is capable reflecting near (NIR) shortwave (SWIR), transmitting medium wave (MWIR) as well longwave (LWIR). A single crystal germanium (Ge) sheet used substrate beamsplitter, while Ge, zinc sulfide (ZnS) ytterbium trifluoride (YbF3) are selected coating materials. average reflectance more than 95% bands 1.28 to 1.38...
Current-controlled negative differential resistance (CC-NDR) phenomenon attracts a lot of interest for fabricating the access devices nonvolatile memory based on crossbar array architectures. However, simple, bipolar, two-terminal commercial that exhibit CC-NDR are currently lacking because number critical characteristics needed to be met such application. Here, we report observed in Mn1.56Co0.96Ni0.48O4 (MCNO)- small-polaron hopping material. Our experimental data and simulation reveal...
The advanced remote sensing instruments used in space need to separate the wide spectrum from ultraviolet infrared, and polarization sensitivity needs be controlled optical system. Generally, control of low-polarization-sensitivity is required, which very important for quantifying high-precision information inversion. Optical films play a key role instruments. Through research on two main color separation technologies medium-metal-medium film full medium film, dichroic mirror based with low...
This paper proposes a way of design transplanting mechanism with plane five-bar linkage for the transplanter. The dimensions linkage, which fit agronomic needs, are designed. Multiple-population genetic algorithm is used to generate mechanisms in optimum synthesis. And generated typical example. Also it can needs given seedling.