A5101869492- 2D Materials and Applications
- Graphene research and applications
- Perovskite Materials and Applications
- Topological Materials and Phenomena
- MXene and MAX Phase Materials
- Advanced Semiconductor Detectors and Materials
- Magnetic and transport properties of perovskites and related materials
- Gas Sensing Nanomaterials and Sensors
- Food composition and properties
- Chalcogenide Semiconductor Thin Films
- Quantum and electron transport phenomena
- Surface and Thin Film Phenomena
- Advanced Condensed Matter Physics
- Photonic and Optical Devices
- Theoretical and Computational Physics
- Electronic and Structural Properties of Oxides
- Ga2O3 and related materials
- Metal and Thin Film Mechanics
- Microbial Metabolites in Food Biotechnology
- Diamond and Carbon-based Materials Research
- Transition Metal Oxide Nanomaterials
- ZnO doping and properties
- Nanowire Synthesis and Applications
- Rare-earth and actinide compounds
- Phase-change materials and chalcogenides
Goldwind (China)
2024
Shanghai Institute of Technical Physics
2018-2024
Jiangnan University
2024
University of Chinese Academy of Sciences
2019-2024
Institute of Physics
2024
Chinese Academy of Sciences
2010-2024
ShanghaiTech University
2021
Technology Partnership (United Kingdom)
1998
Abstract Next-generation polarized mid-infrared imaging systems generally requires miniaturization, integration, flexibility, good workability at room temperature and in severe environments, etc. Emerging two-dimensional materials provide another route to meet these demands, due the ease of integrating on complex structures, their native in-plane anisotropy crystal structure for high polarization photosensitivity, strong quantum confinement excellent photodetecting performances temperature....
Low-dimensional Te-based photodetectors exhibit blackbody response and achieve record-set performance metrics.
Abstract Single‐crystalline diamond wafers are synthesized, and all‐carbon solar‐blind photodetectors constructed based on the with interdigitated graphite as electrodes. The electrodes made by laser‐induced graphitization of diamond. peak responsivity photodetector is 21.8 A W −1 , detectivity 1.39 × 10 12 cm Hz 1/2 when bias voltage 50 V, it noted that both these among best values ever reported for diamond‐based photodetectors. employed sensing pixels in an imaging system, a clear image...
van der Waals (vdW) magnetic insulators are of significance in both fundamental research and technological application, but most two-dimensional (2D) vdW systems unstable high lattice symmetry. Stable 2D with anisotropic structure needed to modulate the properties unlock potential applications. Here we present a stable antiferromagnetic material, CrOCl, low-symmetry orthorhombic structure, investigate systematically its magnetism, phase transition behavior, optical anisotropy. Spin-phonon...
Abstract Low‐symmetry 2D materials with unique anisotropic optical and optoelectronic characteristics have attracted a lot of interest in fundamental research manufacturing novel devices. Exploring new low‐symmetry narrow‐bandgap will be rewarding for the development nanoelectronics nano‐optoelectronics. Herein, sulfide niobium (NbS 3 ), transition metal trichalcogenide semiconductor structure, is introduced into narrowband material strong physical properties both experimentally...
Abstract 2D layered materials are an emerging class of low‐dimensional with unique physical and structural properties extensive applications from novel nanoelectronics to multifunctional optoelectronics. However, the widely investigated strongly limited in high‐performance electronics ultrabroadband photodetectors by their intrinsic weaknesses. Exploring new narrow bandgap is very imminent fundamental. A narrow‐bandgap noble metal dichalcogenide (PtS 2 ) demonstrated this study. The...
Emerging low-dimensional materials exhibit the potential in realizing next-generation room-temperature blackbody-sensitive infrared detectors. As a narrow band gap semiconductor, tellurium (Te) has been focus of detector research attention because its high hole mobility, large absorptivity, and environmental stability. However, it is still challenge to fabricate Te-based detectors with low dark current fast speed. In this work, heterojunction device based on Te graphene constructed,...
Broadband photodetection including midwave infrared (MWIR) is crucial in space science and technology. Topological insulators Bi2Se3 have exhibited excellent performance infrared. However, the large dark current caused by topological surface states impedes further capability enhancement. Here, we designed integrated Bi2Se3/BP van der Waals p-n heterojunction to suppress current. The built-in electric field clean, sharp interface at heterojunctions drive photoresponse of photodetector from...
Abstract 2D materials including graphene, transition metal dichalcogenides, and phosphorene have been widely researched for electronic optoelectronic applications in recent years. Etching techniques controlling the layer number patterning shape of layered demonstrated to be a crucial part fabrication various functional devices. Six types etching used are discussed, mechanism, purpose, advantages each technique explored. In addition mature thin‐film semiconductors processing such as reactive...
The intriguing carrier dynamics in graphene heterojunctions have stimulated great interest modulating the optoelectronic features to realize high-performance photodetectors. However, for most phototransistors, photoresponse characteristics are modulated with an electrical gate or a static field. In this paper, we demonstrate graphene/C60/pentacene vertical phototransistor tune both time and photocurrent based on light modulation. By exploiting power-dependent multiple states of photocurrent,...
2D materials, of which the carrier type and concentration are easily tuned, show tremendous superiority in electronic optoelectronic applications. However, achievements still quite far away from practical Much more effort should be made to further improve their performance. Here, p-type MoSe2 is successfully achieved via substitutional doping Ta atoms, confirmed experimentally theoretically, outstanding homojunction photodetectors inverters fabricated. p-n device with a low reverse current...
Abstract 2D layered photodetectors have been widely researched for intriguing optoelectronic properties but their application fields are limited by the bandgap. Extending detection waveband can significantly enrich functionalities and applications of photodetectors. For example, after breaking through bandgap limitation, extrinsic Si used short‐wavelength infrared or even long‐wavelength detection. Utilizing photoconduction to extend is attractive desirable. However, has yet not observed in...
Abstract The preparation of ternary 2D layered material (2DLM) FePSe 3 and field‐effect transistor (FET) type photodetector are investigated. By advancing an optimized chemical vapor transport method, bulk crystal is synthesized within several growth hours instead routinely required weeks, from which 2DLM flakes with a thickness ≈22.0 nm high crystalline quality obtained through mechanical exfoliation. Ohmic contacts for FET structure good linear conductivity thermal stability implemented...
In recent years, as a direct wide band gap semiconductor, zinc oxide (ZnO) nanomaterial has attracted lot of attention. However, the widely investigated ZnO materials are strongly limited in fast-response and broadband photodetectors due to their inherent weaknesses, so an effective structure or mechanism nanostructure photodetector is greatly needed. this work, photogating-controlled based on nanosheet-HfO2-lightly doped Si architecture demonstrated. Its performance was significantly...