A5060453151- Chalcogenide Semiconductor Thin Films
- Advanced Semiconductor Detectors and Materials
- Semiconductor Quantum Structures and Devices
- Quantum Dots Synthesis And Properties
- Ferroelectric and Piezoelectric Materials
- 2D Materials and Applications
- Multiferroics and related materials
- Dielectric properties of ceramics
- Spectroscopy and Laser Applications
- Perovskite Materials and Applications
- Gas Sensing Nanomaterials and Sensors
- Transition Metal Oxide Nanomaterials
- Analytical Chemistry and Sensors
- MXene and MAX Phase Materials
- Advanced Memory and Neural Computing
- Copper-based nanomaterials and applications
- Ga2O3 and related materials
- Photorefractive and Nonlinear Optics
- Microwave Dielectric Ceramics Synthesis
- Semiconductor Lasers and Optical Devices
- Advanced Fiber Optic Sensors
- Photonic and Optical Devices
- Photonic Crystals and Applications
- Electronic and Structural Properties of Oxides
- Electrochemical sensors and biosensors
East China Normal University
2014-2025
Shanxi University
2022-2025
Henan University
2024
Max-Born-Institute for Nonlinear Optics and Short Pulse Spectroscopy
2013-2015
Sichuan University
2012
Shanghai Institute of Technical Physics
2006-2009
Chinese Academy of Sciences
2006-2009
Wuhan University of Technology
2004
Emerging low-dimensional materials exhibit the potential in realizing next-generation room-temperature blackbody-sensitive infrared detectors. As a narrow band gap semiconductor, tellurium (Te) has been focus of detector research attention because its high hole mobility, large absorptivity, and environmental stability. However, it is still challenge to fabricate Te-based detectors with low dark current fast speed. In this work, heterojunction device based on Te graphene constructed,...
Abstract Cu 2 ZnSn(S,Se) 4 (CZTSSe) has attracted great interest in thin‐film solar cells due to its excellent photoelectric performance past decades, and recently is gradually expanding the field of photodetectors. Here, CZTSSe self‐powered photodetector prepared by using traditional photovoltaic device structure. Under zero bias, it exhibits with a maximum responsivity 0.77 A W −1 , high detectivity 8.78 × 10 12 Jones, wide linear dynamic range 103 dB. Very fast response speed rise/decay...
Fourier transform infrared (FTIR) spectrometer is a powerful tool for studying the photoluminescence (PL) properties of semiconductors, due to its well-known multiplexing and throughput advantages. However, it suffers from internal He–Ne laser disturbance in near-infrared and∕or environmental background thermal emission mid- far-infrared spectral regions. In this work, modulated PL technique developed based on step-scan (SS)-FTIR spectrometer. Theoretical analysis conducted, applications are...
Although a lot of promising two-dimensional (2D) semiconductors with various bandgaps, represented by black phosphorus (0.3 eV), transition metal dichalcogenides (< 2 and boron nitride (5 − 6 have been extensively researched in photoelectronic electronic devices, the spectrum large bandgap materials is still very narrow, which limits potential device applications ultraviolet photodetection. The broad family layered thio- seleno-phosphates wide tunable bandgaps (1.3 3.5 eV) can...
Abstract Numerous synaptic devices have been explored for the next generation of energy‐efficient computing techniques. Among them, optoelectronic based on semiconductor/ferroelectric heterostructures received a lot attention lately due to their amazing parallelism, efficiency, and fault tolerance properties. However, polarizing ferroelectric layer or gating dielectric is necessary achieve tunable functions, which generally causes an increase in energy consumption complex manufacturing...
Abstract In recent years, optoelectronic synapses made from 2D materials like black phosphorus, MoS 2 , InSe, and organic compounds have rapidly developed. A suitable bandgap enables them to respond light stimuli in a manner similar the responses of human eye's visual neurons. However, most these suffer drawbacks such as high costs, complex device structures, narrow spectral response ranges. This paper introduces low‐energy consumption artificial synapse based on 18R‐SnSe prepared using...
Two-dimensional (2D) valleytronic materials are both fundamentally intriguing and practically appealing to explore novel physics design next-generation devices. However, traditional control means such as optic pumping or magnetic field cannot meet the demands of modern electron devices for miniaturization, low-dissipation, non-volatility. Thus, it is attractive combine ferroelectric property with valley in a single compound. In this paper, recent progress ferroelectric-valley coupling...
Two kinds of BiFeO3 (BFO) thin films with different oxygen stoichiometry are fabricated on (La, Sr)CoO3 coated silicon substrates. A Debye-like dielectric relaxation was observed in the samples thermally treated at 3 Pa oxygen. The frequency dependence permittivity can be fitted by a model containing response and universal response. According to model, ascribed vacancy, possible influences from interfacial polarization between BFO electrodes have been excluded measurement responses dc biased...
Shallow levels in arsenic-doped Hg1−xCdxTe grown by molecular beam epitaxy have been investigated temperature- and excitation power-dependent modulated photoluminescence spectroscopy. The ionization energies of the shallow AsTe, AsHg, AsHg–VHg complex are preliminarily determined to be about 11.0, 8.5, 33.5meV, respectively. Correspondingly, forming energy has deduced approximately 10.5meV. results could used as guidelines for material growth or fabrication related devices.
Abstract To meet the development of wearable and energy‐efficient flexible electronics, multifunctional oxide film on soft substrate its versatile phase control are in demand. Here, VO 2 is directly deposited mica via van der Waals epitaxy, exhibiting pronounced metal‐insulator (MI) transition infrared (IR) switching properties. Using a rubbery solid ionic gel as gate insulator, fully transparent ‐channel Mott transistor successfully demonstrated. The prototype processes excellent mechanical...
Abstract Significant open‐circuit voltage deficit ( V OC‐def ) is regarded as the primary obstacle to achieving efficient kesterite solar cells. By leveraging a synergistic approach that combines photoluminescence, admittance spectroscopy and cathodoluminescence techniques, theoretical models of radiative recombination in Cu 2 ZnSnS 4 are revisited, allowing for comprehensive clarification both nonradiative loss effects bulk at interfaces. This quantitative analysis reveals Cu/Zn disorder...
A technique is developed for photomodulated spectroscopy in a long-wavelength region, based on step-scan Fourier transform infrared spectrometer. The experimental setup discussed, and photoreflectance (PR) spectra of narrow-gap HgCdTe materials are given as examples at the wavelengths 5 9μm. photoluminescence suggest that PR features related to material fundamental gap. signal-to-noise ratio spectral resolution spectrum quite good line-shape analysis. results indicate can be well fitted by...
The modulated photoluminescence spectra have been performed on as-grown and in situ annealed arsenic-doped Hg1−xCdxTe grown by molecular beam epitaxy. Besides the discussions about shallow levels including VHg, AsHg, VHg–AsHg complex, TeHg, two deep observed with an ionization energy of ∼77.0 ∼95.0 meV, respectively, which can be completely eliminated annealing temporarily ascribed to As-related clusters or interstitials.
Optical properties of ferroelectric Bi3.25La0.75Ti3O12 (BLT) films on quartz have been investigated using ultraviolet-infrared transmittance spectra in the temperature range 77–500K. The can be divided into three distinctive photon regions between 1.1 and 6.5eV. It is found that band gap Eg decreases from 3.88to3.77eV with temperature. parameters aB ΘB Bose-Einstein model are 30.3meV 218.7K, respectively. narrowing coefficient dEg∕dT −2.65×10−4eV∕K at room present results crucial for future...
Silicate- and borosilicate-based PbS:glass material borosilicate-glass-based fibers are fabricated analyzed. Optical properties including absorption emission characterized related to growth annealing conditions. In silicate glasses PbS volume fractions of exceeding 0.4 percent almost octave-spanning spectra with a halfwidth 940 nm achieved. Fiber bundles core being surrounded by three PbS:Glass pulled. A confinement factor Γ = 0.00406 is determined. Emission properties, in particular...
Abstract Vanadium dioxide (VO 2 ) films were prepared by the sol–gel method on high-purity silicon substrates, in which cetyltrimethyl ammonium bromide (CTAB) was used as a functional additive to form nano-porous structure VO films. The morphology, crystalline and stoichiometry of investigated field emission scanning electron microscopy, x-ray diffraction photoelectron spectroscopy. Furthermore, effects nano-scaled grain size pores THz transmission properties across phase transition studied....
Abnormal temperature dependence of absorption edge is reported for narrow-gap Hg1−xCdxTe semiconductors at low temperature. Infrared spectra are taken bulk and molecular-beam epitaxial Hg1−xCdxTe, respectively, in the range 11–300K. The results indicate an abnormal shift around 30–70K. Analysis suggests that (i) phenomenon introduced by Hg vacancies samples, which energy level locates about 9–12meV above valence band, (ii) conventional criterion determination band gap energy, Eg, from not...
Optical properties and relaxation mechanisms of PbS quantum dots in glass matrix (PbS:Glass) have been systematically investigated by transmission (steady-state transient) photoluminescence spectroscopy. Key parameters are determined combining the data with semiempirical expressions, based on which recombination including spontaneous stimulated emissions discussed as a function temperature referring to multilevel model intrinsic (or band-to-band transition), bright, dark, ground states. The...
A comparative study of cutoff wavelength is performed by photocurrent (PC), transmission, and infrared photoreflectance (PR) spectroscopies on arsenic-doped Hg1−xCdxTe molecular beam epitaxial layers in the midinfrared spectral region. It illustrated that (i) a shorter PC response may be predicted either band gap or energy half-maximum transmission (ii) main PR peak coincident energetically to third-derivative maximum spectrum. The mechanism behind discussed with aid photoluminescence...