A5002335834- Ga2O3 and related materials
- ZnO doping and properties
- Ferroelectric and Piezoelectric Materials
- Multiferroics and related materials
- Smart Grid and Power Systems
- Electronic and Structural Properties of Oxides
- Advanced Photocatalysis Techniques
- Dielectric materials and actuators
- Electricity Theft Detection Techniques
- Power Systems and Technologies
- Power Systems and Renewable Energy
- Magnetic and transport properties of perovskites and related materials
- Vitamin D Research Studies
- AI in cancer detection
- Power Systems Fault Detection
- High-Voltage Power Transmission Systems
- Systemic Lupus Erythematosus Research
- Trigeminal Neuralgia and Treatments
- Energy Load and Power Forecasting
- Copper-based nanomaterials and applications
- Cancer-related molecular mechanisms research
- Facial Nerve Paralysis Treatment and Research
- Meningioma and schwannoma management
- Microwave Dielectric Ceramics Synthesis
- Transition Metal Oxide Nanomaterials
Chinese Academy of Sciences
2017-2025
Ningbo Institute of Industrial Technology
2021-2025
Xidian University
2020-2025
Shanghai Zhangjiang Laboratory
2022-2024
State Grid Corporation of China (China)
2024
Western University
2023
Shanghai Institute of Ceramics
2017-2022
Tongji University
2004-2020
Tongji Hospital
2004-2020
Shanghai Normal University
2019
The strategy of turning ferroelectric into relaxor is feasible and effective to boost the energy density efficiency for sodium bismuth titanate-based bulk ceramics.
Excellent energy storage properties were achieved in NaNbO<sub>3</sub>-based ceramics by enhancing antiferroelectricity and constructing local random field simultaneously.
The strategy of constructing weakly coupled polar structures is feasible and effective to boost the energy density efficiency for bismuth ferrite-based bulk ceramics.
An ultrahigh recoverable energy density was achieved in rare-earth-modified silver niobate lead-free antiferroelectric ceramics <italic>via</italic> local chemical pressure tailoring.
Abstract In this work, a new lead‐free relaxor ferroelectric 0.60BiFeO 3 ‐0.34BaTiO ‐0.06Sr(Al 0.5 Nb )O ( BBFTO ‐ SAN ) ceramic was prepared via the conventional solid‐state reaction method. High recoverable energy density (1.75 J/cm and efficiency (81%) were achieved, which is superior to some other ceramics. Good thermal stability in wide temperature range (30‐120°C) also investigated system. Moreover, we first studied charge‐discharge performance of bulk BFO ‐based storage ceramics...
Recently, dielectrics for energy storage have been attracting increasing attention due to their ultrahigh power density. However, the widespread application of remains limited by low In this work, lead-free single-phase relaxor (1 − x)Ba0.55Sr0.45TiO3-xBiMg2/3Nb1/3O3 [(1 x)BST-xBMN] (x = 0, 0.05, 0.07, and 0.10) bulk ceramics were prepared a conventional solid-state reaction process. The dielectric properties, behavior, properties explored in detail. With BMN content, observed increase...
Abstract This work fabricates deep-ultraviolet (DUV) photodetectors (PDs) with a metal-semiconductor-metal structure based on radio-frequency sputtered amorphous Ga 2 O 3 films at room temperature. The -based PD exhibits low dark current of 1.41 × 10 −11 A, responsivity 1.77 A W −1 and fast rise response time 114 ms. series annealing treatments different atmospheres have been found effective to reduce the oxygen vacancy concentration, exhibiting trade-off effect between time. These results...
High-performance AgNbO<sub>3</sub>-based lead-free pyroelectric materials were developed <italic>via</italic> antiferroelectric/ferroelectric phase boundary design, which can open new avenues for the application of materials.
Gallium oxide (Ga<sub>2</sub>O<sub>3</sub>) is an emerging semiconductor for advanced optoelectronic applications owing to its suitable bandgap and advantageous electronic characteristics. While amorphous Ga<sub>2</sub>O<sub>3</sub> highly desired low-cost large-scale device application, it suffers from high dark current slow response speed practical ultraviolet photodetection. Here we integrate a polar aluminum nitride (AlN) template with fabricate fast-response metal (MSM) photodetector....
We report the fabrication of a crystalline <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\varepsilon $ </tex-math></inline-formula> -Ga2O3 epilayer on diamond substrate as deep ultraviolet photodetectors for high-temperature operation. Despite their large lattice mismatch, we achieve high quality growth films that exhibit single out-of-plane orientation. A metal-semiconductor-metal photodetector is...
Abstract Background Pancreatic cancer is among the most lethal malignancies, with lowest survival rates. The use of image‐guided radiotherapy has shown significant potential in enhancing surgical outcomes for pancreatic cancer. However, accurate segmentation tumors prior to remains a challenge due small size, irregular shape, and indistinct boundaries pancreas tumor monomodal imaging. Furthermore, availability multimodal images that meet requirements precise highly limited, leading datasets...
Self-powered solar-blind photodetectors based on Ga2O3 heterojunctions with high sensitivity and fast response speeds are in demand for versatile applications. However, the inferior assembly of heterojunction interface typically results a significant leakage current compromised device performance. Herein, we fabricate NiO/ε-Ga2O3 p-n photodetector first time introduce high-resistance homogeneous layer at to suppress successfully. The serves extend depletion region thereby reduce probability...
A colossal negative electrocaloric effect is demonstrated for the first time in versatile bismuth ferrite-based perovskite.
We report a new sensor for the specific detection of lead ions (Pb2+) in contaminated water based on fluorescence resonance energy transfer (FRET) between upconversion nanoparticles (UCNPs) as donors and gold (Au NPs) receptors. The UCNPs modified with Pb2+ aptamers could bind to Au NPs, which were functionalized complementary DNA through hybridization. green was quenched maximum rate 80% due close proximity donor acceptor. In presence Pb2+, FRET process broken because induced formation...
Abstract Here we investigate the influence of oxygen vacancy content and electrode contact on performance deep ultraviolet photodetectors based amorphous Ga 2 O 3 films. The fine-tuning ratio effectively reduces content, which obtains optimized device with a responsivity 5.78 A W −1 rise/fall time 301/89 ms. metal formation its impact are further studied. Compared to Ohmic-type using Ti electrodes, Schottky-type devices Au Al electrodes exhibit shorter rise lower dark current.
Objective: To evaluate the operative outcomes and mechanisms of microvascular decompression in treating typical atypical trigeminal neuralgia. Methods: A group 45 patients with neuralgia 17 treated by micro-vascular from 2000 to 2002 were reviewed, including their clinical presentations, findings, outcomes. Results: Of neuralgia, mean duration was 3.1 years, age pain onset 60.3 years. Single division involved 20 (44.4%), 2 or 3 divisions other 25 (55.6%). During operation, artery compression...
Precision synthesis of ultrawide-bandgap semiconductors with a desired crystal phase is broad interest for developing advanced electronic devices. However, it highly challenging gallium oxide (Ga2O3), which known versatile transition. Here, we report non-equilibrium epitaxy strategy to confine the crystallization pathways Ga2O3 toward two distinct metastable polymorphs during pulsed laser deposition (PLD) growth. This achieved by synergic control substrate orientation and intentional tin...
Doping with extrinsic elements in bismuth vanadate (BiVO4, BVO) has been widely exploited for boosting photoelectrochemical (PEC) water splitting. However, changes the carrier transport behavior of doping, particular Bi-site doping BVO, are still not well understood. Here, we explore im pact site-selective on structural variation and electron BVO as its implication designing photoanodes improved performance. Two types single-crystalline doped films, V site substituted Mo (MoV) ions or Bi Gd...
Abstract Numerous synaptic devices have been explored for the next generation of energy‐efficient computing techniques. Among them, optoelectronic based on semiconductor/ferroelectric heterostructures received a lot attention lately due to their amazing parallelism, efficiency, and fault tolerance properties. However, polarizing ferroelectric layer or gating dielectric is necessary achieve tunable functions, which generally causes an increase in energy consumption complex manufacturing...