A5100449489- 2D Materials and Applications
- Chalcogenide Semiconductor Thin Films
- Quantum Dots Synthesis And Properties
- Nanowire Synthesis and Applications
- Ga2O3 and related materials
- Image Retrieval and Classification Techniques
- Thin-Film Transistor Technologies
- Advanced Image and Video Retrieval Techniques
- Semiconductor materials and devices
- ZnO doping and properties
- Distributed systems and fault tolerance
- Network Security and Intrusion Detection
- solar cell performance optimization
- Photonic and Optical Devices
- Semiconductor Quantum Structures and Devices
- Advanced Sensor and Energy Harvesting Materials
- Gas Sensing Nanomaterials and Sensors
- MXene and MAX Phase Materials
- Organic Light-Emitting Diodes Research
- Electronic and Structural Properties of Oxides
- Robotics and Sensor-Based Localization
- Biomedical Research and Pathophysiology
- Parathyroid Disorders and Treatments
- Force Microscopy Techniques and Applications
- Perovskite Materials and Applications
Huazhong University of Science and Technology
2015-2025
Wuhan National Laboratory for Optoelectronics
2014-2025
Chinese PLA General Hospital
2021
GlobalFoundries (Singapore)
2019
Wuhan University
2019
Shanghai Institute of Technical Physics
2019
University of Chinese Academy of Sciences
2019
Shanghai Institute of Microsystem and Information Technology
2002
Low-dimensional Te-based photodetectors exhibit blackbody response and achieve record-set performance metrics.
Emerging low-dimensional materials exhibit the potential in realizing next-generation room-temperature blackbody-sensitive infrared detectors. As a narrow band gap semiconductor, tellurium (Te) has been focus of detector research attention because its high hole mobility, large absorptivity, and environmental stability. However, it is still challenge to fabricate Te-based detectors with low dark current fast speed. In this work, heterojunction device based on Te graphene constructed,...
Abstract In the last decade, two‐dimensional layered materials (2DLMs) have been drawing extensive attentions due to their unique properties, such as absence of surface dangling bonds, thickness‐dependent bandgap, high absorption coefficient, large specific area, and so on. But high‐quality growth transfer wafer‐scale 2DLMs films is still a great challenge for commercialization pure 2DLMs‐based photodetectors. Conversely, material device fabrication technologies three‐dimensional (3D)...
Two-dimensional (2D) material-based photodetectors, especially those working in the infrared band, have shown great application potential thermal imaging, optical communication, and medicine fields. Designing 2D material photodetectors with broadened detection band enhanced responsivity has become an attractive but challenging research direction. To solve this issue, we report a zirconium trisulfide (ZrS3) photodetector response assistance of synergistic effects extrinsic photoconduction...
Abstract The increasing demand for multispectral information acquisition and the complexity of application environments have sparked a growing interest in broadband detection. However, achieving high level responsivity across wide response range remains significant challenge. Herein, an ultrasensitive phototransistor based on hybrid photogating (HPG) structure is demonstrated, which consisted quasi‐2D beta‐phase gallium oxide (β‐Ga 2 O 3 ) nanoflake as carrier transport channel tellurium...
Abstract Next‐generation high‐luminance laser lighting faces a crucial challenge in developing transmissive color converter with efficient heat dissipation and phosphor conversion. Herein, unique architecture of Al 2 O 3 particles gradient doping phosphor‐in‐glass film (PiGF) coated on transparent sapphire (AGD‐PiGF@S) is designed prepared by simple multilayer printing low‐temperature sintering strategy. By optimizing the structure, 9‐0%AGD‐PiGF@S enables white light high luminous flux (LF)...
A solvothermal method has been employed to synthesize bismuth sulfide (Bi2S3) with three-dimensional (3D) hierarchical architectures. The influences of different types surfactants and Cl(-) species on the size morphology were investigated. possible formation mechanism was also proposed basis time-dependent experiments. photoresponse properties show that conductivity Bi2S3 micro-flowers is significantly enhanced photocurrent approximately two orders magnitude larger than dark current....
As typical direct bandgap II–VI semiconductors, quasi-one dimensional CdS nanowires, nanobelts, and nanorods have shown great potential in electronic optoelectronic applications. However, most nano-scale Field Effect Transistors (FETs) work the depletion-mode (D-mode) due to high unintentional n-type doping concentration, which results power consumption under off-state. In addition, large dark current limits specific detectivity when they are fabricated into phototransistors. Here, we...
Abstract We report the modulation of emission energy, exciton dynamics and lasing properties in a single buckled CdS nanoribbon (NR) by strain-engineering. Inspired ordered structure fabrication on elastomeric polymer, we develop new method to fabricate uniform NRs supported polydimethylsiloxane (PDMS). Wavy structure, which compressive tensile strain periodically varied along NR, leads position-dependent energy shift as large 14 nm photoluminescence (PL) mapping. Both micro-PL...
With the application of real-time databases and intrusion malicious transactions, it has become increasingly important to model ability database tolerance effectively evaluate its survivability. Based on features transaction data for system, an tolerant architecture been proposed system. Considering factors such as detection latency a variety parameters real-time, Semi-Markov evaluation survival assessment is established. this model, relevant quantitative criteria are made define indicators...
Metamorphic multiple-junction soalr cells based on III-V compound semiconductor have advantages of more degree freedom in selection bandgaps subcells. Recently, Spectrolab, Inc. reported a high conversion efficiency 40.7% triple-junction Ga<sub>0.44</sub>In<sub>0.56</sub>P/Ga<sub>0.92</sub>In<sub>0.08</sub>As/Ge solar cell where the top and middle are lattice-mismatched to Ge substrate. Optimization device structure such metamorphic is important increase its efficiency. In this work,...
The inclusion of a back surface field (BSF) can significantly improve the efficiency GaAs solar cells due to better collection photogenerated minority carriers. In this work, single cell has been optimized by varying material properties AlGaAs layer using an advanced commercial software, Crosslight APSYS simulator. By optimizing Al composition and width layer, maximum 25.660% is obtained when 0.25 0.3 μm. band diagrams, 2-dimensional relative energy density profile I-V curve device structure...
Bi2S3 microflowers were synthesized via a facile one-pot hydrothermal method and then the photodetectors fabricated. The devices show photoconductive gain of 1.7 orders magnitude. response decay time is estimated to be ~227 ms 880 ms, respectively, indicating promising application for photoelectrical witches photodetectors.
Impurity centres in high purity silicon with ionization energies 38.32 and 40.09meV are observed by photothermal spectroscopy measurements. Their typical shallow donor characteristics approved good agreement theoretic evaluation under varying magnetic fields. The 2p0 state lifetime of one more than 3 times longer that phosphorus the same sample. Compared to which has been already successfully exploited produce silicon-based THz radiations, this centre a pronounced enhancement on quality...
Non-negative matrix factorization (NMF) is an emerging technique of latent semantic analysis from the given document corpus. The existing NMF algorithms don not use intrinsic structure information original In order to preserve in space extracted by NMF, a algorithm with properties presented. primary ideal extend through incorporating constraints inside decomposition. Our experimental results performed on RCV1 and SECTOR data sets show that proposed method superior for analysis.
In this paper, we present a non-symmetry and anti-packing object pattern representation model (NAM) for detection. A set of distinctive sub-patterns (object parts) is constructed from sample images the class; are then represented using sub-patterns, together with spatial relations observed among sub-patterns. Many feature descriptors can be used to describe these he NAM codes global geometry category, local descriptor deal variation object. By Edge Direction Histogram (EDH) features...
Low propagation loss waveguides are always preferred when making Si-photonics waveguide devices. However, light scattering due to sidewall roughness of contributes the majority signal losses. To reduce loss, a reliable approach measure is critical fine-tune fabrication process. In this paper, we report direct measurement method by using Atomic Force Microscopy (AFM) incorporated with special scanning mode (Peakforce Tapping mode) and point-terminated probe. This has been successfully applied...
Abstract We demonstrate a novel ultraviolet (UV) light irradiation strategy to rapidly weld Cu nanowires (NWs) network and remove the organic residues for transparent electrodes. Shortly irradiated by UV source, NWs could achieve junction welding in absence of any thermal annealing process. This shows high optoelectronic performance (39 Ω/sq at 90% transmittance 550 nm) outstanding flexibility under bending twisting. Completely light-emitting diode (LED) chips array was fabricated has been...
SiC films were synthesized by ion implantation, beam enhanced deposition, reactive sputtering and plasma chemical vapor deposition (PECVD). P-type [100] Si was implanted with 60 keV C/sup +/ at different temperatures to form a buried layer. Implanting 680/spl deg/C, there are two apparent XRD peaks due the /spl beta/-SiC[200] [400] reflections in as samples. Ion could be adopt prepare amorphous containing bonds whose absorption bands located 800 cm/sup -1/. Hydrogenated deposition....