A5102712521- Advanced Semiconductor Detectors and Materials
- 2D Materials and Applications
- Semiconductor Quantum Structures and Devices
- Photonic and Optical Devices
- Chalcogenide Semiconductor Thin Films
- Perovskite Materials and Applications
- Plasmonic and Surface Plasmon Research
- Topological Materials and Phenomena
- Neural Networks and Reservoir Computing
- Semiconductor materials and devices
- Electronic and Structural Properties of Oxides
- Metamaterials and Metasurfaces Applications
- Advanced Thermoelectric Materials and Devices
- Photoreceptor and optogenetics research
- ZnO doping and properties
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Memory and Neural Computing
- Luminescence Properties of Advanced Materials
- Gas Sensing Nanomaterials and Sensors
- Ferroelectric and Negative Capacitance Devices
- Phase-change materials and chalcogenides
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced Optical Sensing Technologies
- Advanced Fiber Optic Sensors
- Superconducting and THz Device Technology
Shanghai Institute of Technical Physics
2012-2025
University of Chinese Academy of Sciences
2023-2025
Chinese Academy of Sciences
2010-2025
Institute for Advanced Study
2025
Donghua University
2025
Qiqihar University
2024
ShanghaiTech University
2023-2024
Zhejiang Academy of Social Sciences
2024
Shanghai University
2023
Low-dimensional Te-based photodetectors exhibit blackbody response and achieve record-set performance metrics.
Abstract Multicolor photodetection, essential for applications in infrared imaging, environmental monitoring, and spectral analysis, is often limited by the narrow bandgaps of conventional materials, which struggle with speed, sensitivity, room‐temperature operation. We address these issues a multicolor uncooled photodetector based on an asymmetric Au/SnS/Gr vertical heterojunction inversion‐symmetry breaking. This design utilizes complementary SnS graphene to enhance efficiency carriers'...
Abstract In the domain of spectroscopy, miniaturization efforts often face significant challenges, particularly in achieving high spectral resolution and precise construction. Here, we introduce a computational spectrometer powered by nonlinear photonic memristor with WSe 2 homojunction. This approach overcomes traditional limitations, such as constrained Fermi level tunability, persistent dark current, limited photoresponse dimensionality through dynamic energy band modulation driven...
Abstract The emergence of novel topological semimetal materials, accompanied by exotic non‐equilibrium properties, not only provides a fertile playground for fundamental level interest but also opens exciting opportunities inventing new applications making use different light‐induced effects such as nonlinear optics, optoelectronics, especially the highly pursued terahertz (THz) technology due to gapless electronic structures. Exploring type‐II Weyl endowed with richness quantum wavefunction...
Abstract The demand for miniaturized and integrated multifunctional devices drives the progression of high‐performance infrared photodetectors diverse applications, including remote sensing, air defense, communications, among others. Nonetheless, that rely solely on single low‐dimensional materials often face challenges due to limited absorption cross‐section suboptimal carrier mobility, which can impair sensitivity prolong response times. Here, through experimental validation is...
Abstract 2D van der Waals (vdW) heterostructures consisting of vertically stacking atomically thin semiconductors with different band structures provide a flexible platform to design integrated electronic and optoelectronic devices multi‐functionalities. However, the realization device multifunctionality requires tunable alignments. Here an efficient strategy is proposed by constructing vdW ferroelectric semiconductor composed ferroelectrics achieve this goal. These calculated results...
Effective detection is critical for terahertz applications, yet it remains hindered by the unclear mechanisms that necessitate a deeper understanding of photosensitive materials with exotic physical phenomena. Here, we investigate capabilities two-dimensional antiferromagnetic semimetal NbFeTe2. Our study reveals interaction between magnetic moments and electron spin induces disordered carriers to hop localized states, resulting in nonlinear increase responsivity as temperature decreases. We...
Abstract The integration of mid‐infrared (MIR) photodetectors with built‐in encryption capabilities holds immense promise for advancing secure communications in decentralized networks and compact sensing systems. However, achieving high sensitivity, self‐powered operation, reliable performance at room temperature within a miniaturized form factor remains formidable challenge, largely due to constraints MIR light absorption the intricacies embedding device level. Here, novel on‐chip...
Optical vortex beams, endowed with orbital angular momentum (OAM) due to their helical wavefronts, are essential for advancements in optical manipulation, quantum computing, and communication technologies. Existing methods generating beams often struggle issues such as low efficiency, limited scalability, rigid control over beam properties. To address these limitations, we have developed a novel generator utilizing plasmonic metasurface constructed from the antimony telluride (Sb 2 Te 3 )....
Layer-dependent electronic and optoelectronic properties in two-dimensional (2D) semiconductors provide a large degree of freedom to exploit high-performance devices for next-generation optoelctronics. However, there is still lack...
<title>Abstract</title> Polarization-sensitive neuromorphic vision sensing excels in distinguishing light polarization states, offering intrinsic advantages reducing glare and enhancing visual clarity complex lighting environments, enabling advanced applications autonomous driving, optical communication, bioinspired imaging across the visible to infrared spectrum. Here, we present a polarization-sensitive phototransistor based on high-quality, intrinsically anisotropic two-dimensional black...
Abstract The advancement of terahertz technology is primarily fueled by the imperative for room‐temperature operation with high sensitivity, integration, and broadband detection capabilities. Nevertheless, traditional semiconductor materials in detectors continue to grapple obstacles, notably intricate integration processing complexities. unique electronic structures non‐trivial topological properties two‐dimensional bring new possibilities perspectives high‐performance low‐energy photon...
We engineered a two-dimensional Pt/WSe
Abstract During infrared detection, the thermal radiation from background generates substantial photon noise and thus severely limit capability of an detector to identify a target. Going beyond this limitation has been long‐standing challenge in development detectors. This paper proposes break by creating narrow photoresponse band with high peak responsivity reject enhance target characteristic emission lines. scheme is numerically demonstrated dimerized grating integrated quantum well...
The demand for broadband, room-temperature infrared, and terahertz (THz) detectors is rapidly increasing owing to crucial applications in telecommunications, security screening, nondestructive testing, medical diagnostics. Current photodetectors face significant challenges, including high intrinsic dark currents the necessity cryogenic cooling, which limit their effectiveness detecting low-energy photons. Here, we introduce a high-performance ultrabroadband photodetector operating at room...