A5064549832- Nanowire Synthesis and Applications
- Graphene research and applications
- Thin-Film Transistor Technologies
- Silicon Nanostructures and Photoluminescence
- Perovskite Materials and Applications
- Molecular Junctions and Nanostructures
- Plasma Diagnostics and Applications
- Quantum and electron transport phenomena
- Silicon and Solar Cell Technologies
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and interfaces
- Semiconductor materials and devices
- Plasma Applications and Diagnostics
- Molecular Sensors and Ion Detection
- solar cell performance optimization
- Organic Electronics and Photovoltaics
- Electromagnetic wave absorption materials
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Sensor and Energy Harvesting Materials
- Electrocatalysts for Energy Conversion
- Gas Sensing Nanomaterials and Sensors
- Radio Frequency Integrated Circuit Design
- Advanced Antenna and Metasurface Technologies
- 2D Materials and Applications
- Photoacoustic and Ultrasonic Imaging
Changshu Institute of Technology
2015-2024
Beijing University of Posts and Telecommunications
2023
Changzhou University
2016-2017
Tsinghua University
2017
Soochow University
2016
Zhejiang University
2015-2016
Southeast University
2008-2011
Hongik University
2010
Abstract Perovskites have attracted intensive attention as promising materials for the application in various optoelectronic devices due to their large light absorption coefficient, high carrier mobility, and long charge diffusion length. However, performance of pure perovskite nanocrystals‐based device is extremely restricted by limited transport capability existence a number grain boundary between nanocrystals. To address these issues, high‐performance photodetector based on all‐inorganic...
Surface charge transfer doping (SCTD) induced p-type inversion layer was implemented in the graphene/silicon heterojunction solar cells, leading to significant improvement of device efficiency.
Perovskite solar cells are used in silicon-based tandem due to their tunable band gap, high absorption coefficient and low preparation cost. However, the relatively large optical refractive index of bottom silicon, comparison with that top perovskite absorber layers, results significant reflection losses two-terminal devices. Therefore, light management is crucial improve photocurrent Si cell. In this paper, nanoholes array filled TiO2 introduced into design. By finite-difference time-domain...
Graphene based GaAs junction solar cell is modeled and investigated by Silvaco TCAD tools. The photovoltaic behaviors have been considering structure process parameters such as substrate thickness, dependence between graphene work function transmittance, n-type doping concentration in GaAs. results show that the most effective region for photo photogenerated carriers locates very close to interface under light illumination. Comprehensive technological design yields a significant improvement...
We propose the perfect all-carbon axisymmetric spintronic devices consisting of a zigzag-edged trigonal graphene (ZTG) linked to left and right nanoribbons (ZGNR) electrodes via carbon atomic chains (CACs). To ensure stability system, edge atoms are passivated by hydrogen atoms. The self-consistent density functional theory (DFT) calculations show that simple system possesses prefect spin-filtering property at wide voltage region from −1.0 1.0 V. More importantly, proposed can act as dual...
Developing low density and efficient dielectric loss materials has become a research hotspot, which can greatly meet the demands of modern radars settle problem electromagnetic wave pollution. Herein, series N-doped ordered mesoporous carbon (OMC) with different nitrogen content were prepared via modified self-assembly method defect engineering in subsequent calcination treatment. It was discovered that type doping be effectively modulated by amount precursor dicyandiamide, resulting changes...
We examine the thermospin properties of an all-carbon nanojunction constructed by a graphene nanoflake (GNF) and zigzag-edged nanoribbons (ZGNRs), bridged carbon atomic chains. The first-principles calculations show that phonon thermal conductance is much weaker than electron at Fermi level, even former few percent latter in low-temperature regime. In meantime, carbon-based device possesses excellent spin transport property level due to appearance half-metallic property. Furthermore,...
Fano effect is an important quantum phenomenon in mesoscopic systems, which arises from interference between the localized state and extended state. Here we observe obvious near Fermi level all-carbon molecular device consisting of acene molecule sandwiched two zigzag graphene nanoribbon (ZGNR) electrodes. By increasing length molecule, gradually evolves into a With aid nearby state, achieved. Using gate voltage, can easily tune induced by single-transmission channel. When spin degree...
Recently, a holey two-dimensional (2D) C2N crystal with wide band gap has been successfully synthesized. However, its non-magnetic property largely limits real applications in spintronics. Here we find that edge magnetism can be introduced by tailoring the 2D into nanoribbons zigzag edges. When N atoms are bare or passivated H atoms, device used to design high-performance thermospin devices and thermal rectifiers. This is ascribed emergence of spin semiconducting gap. Moreover, if O shows...
Abstract In recent years, transition metal-nitrogen-carbon (M-N-C) composites are expected to be an alternative platinum group metal (PGM) among various nonprecious catalysts investigated. However, the major challenge comes from insufficient electrocatalytic performance and durability for oxygen reduction reaction (ORR). addition selection of suitable central active sites, activity stability M-N-C can enhanced by adjusting electronic structure catalysts. this work, M-N-C/F were synthesized...
We fabricated AlGaN solar-blind avalanche photodiodes (APDs) that were based on separate absorption and multiplication (SAM) structures. It was determined experimentally the dark current in these APDs is rapidly enhanced when applied voltage exceeds 52 V. Theoretical analyses demonstrated breakdown at V mainly related to local trap-assisted tunneling effect. Because dependent trap states as a result of modification lifetimes electrons states, processes can be modulated effectively by tuning...