A5083781043- 2D Materials and Applications
- Advanced Semiconductor Detectors and Materials
- Advanced Memory and Neural Computing
- Graphene research and applications
- Advanced Optical Sensing Technologies
- Nanowire Synthesis and Applications
- Perovskite Materials and Applications
- Photonic and Optical Devices
- Ga2O3 and related materials
- Infrared Target Detection Methodologies
- Plasmonic and Surface Plasmon Research
- Chalcogenide Semiconductor Thin Films
- Gas Sensing Nanomaterials and Sensors
- Phase Change Materials Research
- MXene and MAX Phase Materials
- Semiconductor Quantum Structures and Devices
- Thermal Radiation and Cooling Technologies
- ZnO doping and properties
- Photoreceptor and optogenetics research
- Metamaterials and Metasurfaces Applications
- Neural Networks and Reservoir Computing
- Electron and X-Ray Spectroscopy Techniques
- Refrigeration and Air Conditioning Technologies
- CCD and CMOS Imaging Sensors
- Magneto-Optical Properties and Applications
Shanghai Institute of Technical Physics
2018-2025
Chinese Academy of Sciences
2018-2024
University of Chinese Academy of Sciences
2019-2024
Zhejiang Sci-Tech University
2024
Low-dimensional Te-based photodetectors exhibit blackbody response and achieve record-set performance metrics.
Room-temperature-operating highly sensitive mid-wavelength infrared (MWIR) photodetectors are utilized in a large number of important applications, including night vision, communications, and optical radar. Many previous studies have demonstrated uncooled MWIR using 2D narrow-bandgap semiconductors. To date, most these works atomically thin flakes, simple van der Waals (vdW) heterostructures, or p-n junctions as absorbers, which difficulty meeting the requirements for state-of-the-art with...
Abstract Neuromorphic vision hardware, embedded with multiple functions, has recently emerged as a potent platform for machine vision. To realize memory in sensor reconfigurable and non-volatile manipulation of photocarriers is highly desirable. However, previous technologies bear mechanism challenges, such the ambiguous optoelectronic high potential barrier, resulting limited response speed operating voltage. Here, first time, we propose critical band-to-band tunnelling (BTBT) based device...
Zinc oxide (ZnO) nanosheets have demonstrated outstanding electrical and optical properties, which are well suited for ultraviolet (UV) photodetectors. However, they a high density of intrinsically unfilled traps, it is difficult to achieve p-type doping, leading the poor performance low light level switching ratio dark current that limit practical applications in UV photodetection. Here, photodetectors based on ZnO demonstrated, whose significantly improved by using ferroelectric localized...
Abstract 2D layered materials are an emerging class of low‐dimensional with unique physical and structural properties extensive applications from novel nanoelectronics to multifunctional optoelectronics. However, the widely investigated strongly limited in high‐performance electronics ultrabroadband photodetectors by their intrinsic weaknesses. Exploring new narrow bandgap is very imminent fundamental. A narrow‐bandgap noble metal dichalcogenide (PtS 2 ) demonstrated this study. The...
Uncooled infrared photodetectors have evoked widespread interest in basic research and military manufacturing because of their low-cost, compact detection systems. However, existing uncooled utilize the photothermoelectric effect radiation operating at 8-12 µm, with a slow response time millisecond range. Hence, exploration new mid-wavelength (MWIR) heterostructures is conducive to development ultrafast high-performance nano-optoelectronics. This study explores van der Waals heterojunction...
Abstract Filterless light-ellipticity-sensitive optoelectronic response generally has low discrimination, thus severely hindering the development of monolithic polarization detectors. Here, we achieve a breakthrough based on configurable circular-polarization-dependent silent state created by superposition two photoresponses with enantiomerically opposite ellipticity dependences. The zero photocurrent and significantly suppressed noise singularly enhance circular extinction ratio (CPER)...
Abstract Avalanche or carrier-multiplication effect, based on impact ionization processes in semiconductors, has a great potential for enhancing the performance of photodetector and solar cells. However, practical applications, it suffers from high threshold energy, reducing advantages carrier multiplication. Here, we report low-threshold avalanche effect stepwise WSe 2 structure, which combination weak electron-phonon scattering electric fields leads to low-loss acceleration Owing this...
In semiconductor manufacturing, PN junction is formed by introducing dopants to activate neighboring electron and hole conductance. To avoid structural distortion failure, it generally requires the foreign localize in designated micro-areas. This, however, challenging due an inevitable interdiffusion process. Here we report a brand-new architecture, called "layer junction", that might break through such limit help redefine device architecture. Different from all existing semiconductors, find...
Photodetectors and imagers based on 2D layered materials are currently subject to a rapidly expanding application space, with an increasing demand for cost-effective lightweight devices. However, the underlying carrier transport across homo- or heterojunction channel driven by external electric field, like gate drain bias, is still unclear. Here, visible-near infrared photodetector van der Waals stacked molybdenum telluride (MoTe2 ) black phosphorus (BP) reported. The type-I type-II band...
Abstract 2D layered photodetectors have been widely researched for intriguing optoelectronic properties but their application fields are limited by the bandgap. Extending detection waveband can significantly enrich functionalities and applications of photodetectors. For example, after breaking through bandgap limitation, extrinsic Si used short‐wavelength infrared or even long‐wavelength detection. Utilizing photoconduction to extend is attractive desirable. However, has yet not observed in...
The very long wavelength infrared (VLWIR, >14 µm) spectral band is an indispensable part of new-generation remote sensing. Mercury cadmium telluride (HgCdTe or MCT) has shown excellent potential across the entire band. However, dark current, which extremely sensitive to technological level and small Cd composition, severely limits performance VLWIR HgCdTe photodiodes. In this study, cut-off wavelengths up 15 µm for devices with novel P-G-I (including wide bandgap p-type cap layer, grading...
Two-dimensional (2D) materials with reconfigurable properties show potential in neuromorphic hardware applications. However, most 2D materials-based is volatile, which needs large energy to accomplish perception functions. Here, we report on nonvolatile floating gate photo-memory devices based ReS2/h-BN/SnS2 van der Waals heterostructures. The exhibit a memory window of ∼60 V, high program/erase current ratio ∼107 excellent retention characteristics, low off-state 7.4 × 10−13 A, and...
Nowadays, long-wavelength infrared (LWIR) HgCdTe detectors are developing towards high operating temperatures. There remains a lack of knowledge on the operational mechanism LWIR at room temperature. This letter conducted an in-depth study anomalous non-equilibrium state Through laser beam-induced current (LBIC) photocurrent mapping testing, it was found that there high-energy states. The junction formed by states has minority carrier diffusion length up to <inline-formula...
Nanostructured zinc oxide (ZnO) semiconductors have emerged as promising materials for high-performance photodetectors due to their natural direct bandgap and extraordinary physicochemical properties. However, the oxygen vacancy defects of nano-ZnO can easily trap molecules in air generate charge transfer at interface, which induced continuous photoconductance that limited development application ZnO photodetection. Here, we demonstrate a homojunction ultrathin nanosheet photodetector with...
In this study, we aim to examine the influence of water entry velocity a single and two tandem projectile(s) on supercavitation flow projectile loading under wave conditions using numerical simulation. The volume fluid model, renormalization group (RNG) κ-ε turbulence Schnerr–Sauer cavitation model are adopted simulate multiphase, turbulent, flow, respectively. movement is considered overlapping grids six-degree-of-freedom model. results show that as increases, both dimensionless maximum...