A5101691378- Advanced Semiconductor Detectors and Materials
- Diamond and Carbon-based Materials Research
- Chalcogenide Semiconductor Thin Films
- ZnO doping and properties
- Metal and Thin Film Mechanics
- Quantum Dots Synthesis And Properties
- Radiation Detection and Scintillator Technologies
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and devices
- Ga2O3 and related materials
- Electronic and Structural Properties of Oxides
- Advanced Photocatalysis Techniques
- Gas Sensing Nanomaterials and Sensors
- Advanced X-ray and CT Imaging
- Copper-based nanomaterials and applications
- Silicon Nanostructures and Photoluminescence
- GaN-based semiconductor devices and materials
- TiO2 Photocatalysis and Solar Cells
- Force Microscopy Techniques and Applications
- Advanced Surface Polishing Techniques
- Integrated Circuits and Semiconductor Failure Analysis
- High-pressure geophysics and materials
- Thin-Film Transistor Technologies
- Acoustic Wave Resonator Technologies
- Analytical Chemistry and Sensors
Shanghai University
2016-2025
Macao Polytechnic University
2024
Shanghai Institute of Microsystem and Information Technology
2024
Lanzhou University
2023
Guizhou Minzu University
2014-2022
Lanzhou University of Technology
2007-2022
Nanjing Medical University
2017-2022
Jiangsu Province Hospital
2017-2022
Shanghai University of Electric Power
2020
Shanghai University of Engineering Science
2013-2019
Efficient charge separation and transportation are key factors that determine the photoelectrochemical (PEC) water‐splitting efficiency. Here, a simultaneous enhancement of hole on basis ferroelectric polarization in TiO 2 –SrTiO 3 core–shell nanowires (NWs) is reported. The SrTiO shell with controllable thicknesses generates considerable spontaneous polarization, which effectively tunes electrical band bending . Combined its intrinsically high mobility, thin significantly improves...
Self-powered solar-blind UV detectors are playing an increasingly critical role in the sustainable development of photodetectors with low energy consumption.
CsPbBr3 single crystal is a promising candidate for room temperature radiation detector. However, the experimental mobilities reported exhibit considerable discrepancy, ranging widely from 10 to 4500 cm2/(V · s) at temperature. Here, vertical Bridgman grown has been used measure mobility accurately using pulse-biased time-of-flight method. The hole modest be around 25 s). value of corresponding power-law index n on (μ ∼ T-n) −1.23 in range 155–350 K, which well consistent with previous FET...
The Huanglongpu carbonatite-related Mo ore field is located in the Lesser Qinling Orogenic belt southern margin of North China block. composed six deposits, Yuantou, Wengongling, Dashigou, Shijiawan, Taoyuan and Erdaohe, all which are genetically related to carbonatite dykes except for Shijiawan deposit associated with a granitic porphyry. Yuantou intruded into Archean gneiss other carbonatites emplaced Mesoproterozoic volcanic sediment rocks. mainly calcite variable amounts quartz...
Vertical Schottky barrier diodes (SBDs) were fabricated from the metal–organic chemical vapor deposition (MOCVD)-grown GaN epitaxial layer on free-standing substrates. It was found that quality of drift layers and SBD properties strongly dependent growth rates. The step-flow surface morphology, near-unity ideality factor (n ∼ 1.04), high height (∼0.97 eV) achieved at a relatively low rate 2.61 µm/h. An extremely turn-on voltage (0.73 V), together with on-resistance 0.72 mΩ·cm2, obtained.
A conventional wisdom is that the sensing properties of magnetic sensors at high temperatures will be degraded due to materials' deterioration. Here, concept high-temperature enhancing proposed based on hybrid structure SCD MEMS resonator functionalized with a thermal-stable ferromagnetic galfenol (FeGa) film. The delta E effect magnetostrictive FeGa thin film Ti/SCD cantilevers investigated by varying operating temperature from 300 773 K upon external fields. multilayer sensor presents...
Two-dimensional (2D) materials have attracted great attention recently. SnS/SnS2 with sheet-like morphologies are widely used in photoelectric devices because of their excellent electronic transportation properties. In our study, by changing the mole ratios SnCl2 and C2H5NS at reaction temperatures as high 280–300 °C, SnS rectangular nanosheets converted successfully to SnS2 hexagonal a one-pot method. SEM, XRD, Raman, XPS analyses were utilized examine physical properties final products....
Micro-electromechanical systems (MEMS) magnetic sensing at high temperatures over 573 K has not been achieved due to the difficulty in designing rational interface with strong coupling. Here, a sensor based on FeGa/single-crystal diamond (SCD) MEMS resonator is realized circumvent challenges sensing. The present exhibits stable high-sensitivity of 7.3 Hz/mT and an experimental noise level ~4nT/√Hz. performance exceeds those reported high-temperature sensors. This work offers strategy for...