A5059191878- GaN-based semiconductor devices and materials
- Ga2O3 and related materials
- Semiconductor materials and devices
- Diamond and Carbon-based Materials Research
- ZnO doping and properties
- Mechanical and Optical Resonators
- Force Microscopy Techniques and Applications
- Metal and Thin Film Mechanics
- Semiconductor Quantum Structures and Devices
- Nanowire Synthesis and Applications
- Semiconductor materials and interfaces
- Acoustic Wave Resonator Technologies
- Electronic and Structural Properties of Oxides
- Advanced MEMS and NEMS Technologies
- Thermal properties of materials
- Gas Sensing Nanomaterials and Sensors
- Quantum Dots Synthesis And Properties
- Photocathodes and Microchannel Plates
- Magnetic Field Sensors Techniques
- Adhesion, Friction, and Surface Interactions
- Magnetic properties of thin films
- Chalcogenide Semiconductor Thin Films
- Advancements in Semiconductor Devices and Circuit Design
- Geophysics and Sensor Technology
- Magnetic Properties and Applications
Institute of Crop Sciences
2025
Ministry of Agriculture and Rural Affairs
2025
National Institute for Materials Science
2015-2024
Fudan University
2024
Shanghai University
2023
Japan Science and Technology Agency
2013-2021
Peking University
2007-2021
Collaborative Innovation Center of Quantum Matter
2021
Shibaura Institute of Technology
2020
Chubu University
2017
Fabrication of a high-temperature deep-ultraviolet photodetector working in the solar-blind spectrum range (190-280 nm) is challenge due to degradation dark current and photoresponse properties. Herein, β-Ga2O3 multi-layered nanobelts with (l00) facet-oriented were synthesized, demonstrated for first time possess excellent mechanical, electrical properties stability at high temperature inside TEM studies. As-fabricated DUV photodetectors using enhanced photodetective performances, that is,...
Electrochemical-coupling layer-by-layer (ECC-LbL) assembly is introduced as a novel fabrication methodology for preparing layered thin films. This method allows us to covalently immobilize functional units (e.g., porphyrin, fullerene, and fluorene) into films having desired thicknesses designable sequences both homo- heteroassemblies while ensuring efficient layer-to-layer electronic interactions. Films were prepared using conventional electrochemical setup by simple inexpensive process from...
A new UV‐A photodetector based on K 2 Nb 8 O 21 nanowire is successfully fabricated for the first time. The potassium niobate synthesized using a facile molten method. photodetectors exhibit an excellent sensitivity and wavelength selectivity with respect to light. Furthermore, show great advantages in response time compared other sensors single‐oxide semiconductor nanostructures, and, especially, responsivity much better than that of single ZnS nanobelt photodetectors. mechanism...
With the increasing power density and reduced size of GaN-based electronic converters, heat dissipation in devices becomes key issue toward real applications. Diamond, with highest thermal conductivity among all natural materials, is interest for integration GaN to dissipate generated from channel AlGaN/GaN high electron mobility transistors (HEMTs). Current techniques involve three strategies fabricate GaN-on-diamond wafers: bonding diamond, epitaxial growth diamond on GaN, diamond. As a...
The wide bandgap of diamond, along with its extreme semiconductor properties, offers the promising route for deep-ultraviolet (DUV) detection, especially under solar-blind condition and harsh environments. ideal photodetector should generally satisfy 5S requirements such as high sensitivity , signal-to-noise ratio spectral selectivity speed stability . In this paper, we comprehensively investigate DUV detectors fabricated from various kinds single crystal diamonds boron-doped diamond...
A multicolor photodetector based on the heterojunction of n‐Si(111)/TiO 2 nanorod arrays responding to both ultraviolet (UV) and visible light is developed by utilizing interface engineering. The fabricated via a consecutive process including chemical etching, magnetron sputtering, hydrothermal growth, assembling. Under small reverse bias (from 0 ≈−2 V), only photogenerated electrons in TiO are possible tunnel through low barrier Δ E C , device responses UV light; as increases, holes Si also...
The enhanced UV-visible light TiO<sub>2</sub>/Si photodetectors were prepared by doping In or N in TiO<sub>2</sub> nanorod arrays. These devices have obvious advantages the applications of portable and wearable due to small driving voltages relatively large photocurrents.
Abstract 2D electron and hole gases (2DEG or 2DHG) based on semiconductor surface/interface materials are promising for next‐generation integrated circuits high‐frequency ‐power electronics. To reduce power consumption, normally off operation low‐switching‐loss metal‐oxide field‐effect transistors (MOSFETs) 2DEG 2DHG highly in demand. The present methods to achieve MOSFETs have various shortcomings such as reduction carrier mobility, sacrifice of drain current, high uncertainty threshold...
We fabricate heterojunctions consisting of a single n-type ZnO nanowire and p-type GaN film. The photovoltaic effect exhibits open-circuit voltages ranging from 2 to 2.7 V, maximum output power reaching 80 nW. Light-emitting diodes with UV electroluminescence based on the are demonstrated.
A super-thin AlN layer is inserted between the intrinsic InGaN and p-InGaN in solar cell structure to improve photovoltaic property. The dark current markedly decreased by more than two orders of magnitude short-circuit density increased from 0.77 mA/cm2 1.25 mA/cm2, leading a doubled conversion efficiency compared conventional structure. Electrical transport analysis reveals that forward electrical property greatly improved range open circuit voltage leakage mechanism changes defect related...
A thermally stable metal-insulator-semiconductor (MIS) Schottky-type photodiode with high performance based on the InGaN film is demonstrated at temperatures up to 523 K. The reverse leakage current remains a low level (10−7−10−8 A), while UV responsivity as 5.6 A/W −3 V under K, without observing persistent photoconductivity. discrimination ratio between ultraviolet (378 nm) and visible light (600 maintained be more than 105. temperature-dependent current-voltage characteristics of MIS...
Electrical characteristics of leakage current paths in vertical-type n-GaN Schottky barrier diodes (SBDs) on free-standing GaN substrates are investigated by using photon emission microscopy (PEM). The PEM mapping shows that the initial failure SBD devices at low voltages is due to from polygonal pits epilayers. It observed these originate carbon impurity accumulation dislocations with a screw-type component microstructure analysis. For without pits, no and first appeals edge electrodes as...
Foxtail millet (Setaria italica), one of the oldest crops originating in China, has increasingly been recognized as a promising C4 model plant due to its compact diploid genome, short growth cycle and self-pollinating nature (Li Brutnell, 2011). In past 5 years, significant breakthroughs have achieved basic research breeding, including high efficient transformation system establishment, telomere-to-telomere (T2T) genome assembly, pan-genome analysis functional studies (He et al., 2023; Tang...
Views Icon Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Twitter Facebook Reddit LinkedIn Tools Reprints and Permissions Cite Search Site Citation Liwen Sang, Meiyong Liao, Yasuo Koide, Masatomo Sumiya; High-performance metal-semiconductor-metal InGaN photodetectors using CaF2 as the insulator. Appl. Phys. Lett. 7 March 2011; 98 (10): 103502. https://doi.org/10.1063/1.3562326 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley...
The authors report on the direct integration of high-dielectric constant (high-k) Ta2O5 films p-type single crystal diamond for high-power electronic devices. Crystallized hexagonal phase δ-Ta2O5 film is achieved by annealing amorphous deposited a sputter-deposition technique. electrical properties thin are investigated fabricating metal-insulator-semiconductor (MIS) diodes. leakage current MIS diode as low 10−8 A/cm2 as-deposited and 10−2 crystallized film, which 108 102 times lower than...
The wide bandgap of diamond, along with its extreme semiconductor properties, offers the promising route for deep-ultraviolet (DUV) detection, especially under solar-blind condition and harsh environments. ideal photodetector should generally satisfy 5S requirements such as high sensitivity, signal-to-noise ratio, spectral selectivity, speed, stability. In this paper, we comprehensively investigate DUV detectors fabricated from various kinds single crystal diamonds boron-doped diamond...
Abstract The typical photodetectors can only detect one specific optical spectral band, such as InGaAs and graphene-PbS quantum dots for near-infrared (NIR) light detection, CdS Si visible detection ZnO III-nitrides UV detection. So far, none of the developed photodetector achieve multicolor with arbitrary selectivity, high sensitivity, speed, signal-to-noise ratio, stability simplicity (called 6S requirements). Here, we propose a universal strategy to develop selectivity by integrating...
Multiple stacked InGaN/GaN quantum dots are embedded into an InGaN p-n junction to develop multilevel intermediateband (MIB) solar cells. An IB transition is evidenced from both experiment and theoretical calculations. The MIB cell shows a wide photovoltaic response the UV near-IR region. This work opens up interesting opportunity for high-efficiency cells in photovoltaics field. As service our authors readers, this journal provides supporting information supplied by authors. Such materials...
Vertical Schottky barrier diodes (SBDs) were fabricated from the metal–organic chemical vapor deposition (MOCVD)-grown GaN epitaxial layer on free-standing substrates. It was found that quality of drift layers and SBD properties strongly dependent growth rates. The step-flow surface morphology, near-unity ideality factor (n ∼ 1.04), high height (∼0.97 eV) achieved at a relatively low rate 2.61 µm/h. An extremely turn-on voltage (0.73 V), together with on-resistance 0.72 mΩ·cm2, obtained.
Abstract The concept of p -channel InGaN/GaN heterostructure field effect transistor (FET) using a two-dimensional hole gas (2DHG) induced by polarization is demonstrated. existence 2DHG near the lower interface verified theoretical simulation and capacitance-voltage profiling. metal-oxide-semiconductor FET (MOSFET) with Al 2 O 3 gate dielectric shows drain-source current density 0.51 mA/mm at voltage −2 V drain bias −15 V, an ON/OFF ratio two orders magnitude effective mobility 10 cm /Vs...